GB2302870B - Method of forming a boron phosphorous silicate glass film - Google Patents
Method of forming a boron phosphorous silicate glass filmInfo
- Publication number
- GB2302870B GB2302870B GB9603071A GB9603071A GB2302870B GB 2302870 B GB2302870 B GB 2302870B GB 9603071 A GB9603071 A GB 9603071A GB 9603071 A GB9603071 A GB 9603071A GB 2302870 B GB2302870 B GB 2302870B
- Authority
- GB
- United Kingdom
- Prior art keywords
- forming
- silicate glass
- glass film
- phosphorous silicate
- boron phosphorous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title 1
- 229910052796 boron Inorganic materials 0.000 title 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 title 1
- 239000005368 silicate glass Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/04—Joining glass to metal by means of an interlayer
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950018554A KR0172039B1 (en) | 1995-06-30 | 1995-06-30 | Method of forming bpsg |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9603071D0 GB9603071D0 (en) | 1996-04-10 |
GB2302870A GB2302870A (en) | 1997-02-05 |
GB2302870B true GB2302870B (en) | 1999-04-28 |
Family
ID=19419019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9603071A Expired - Fee Related GB2302870B (en) | 1995-06-30 | 1996-02-14 | Method of forming a boron phosphorous silicate glass film |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPH0917781A (en) |
KR (1) | KR0172039B1 (en) |
CN (1) | CN1061635C (en) |
DE (1) | DE19605787B4 (en) |
GB (1) | GB2302870B (en) |
TW (1) | TW288166B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005086240A1 (en) * | 2004-03-05 | 2005-09-15 | Showa Denko K.K. | Boron phosphide-based semiconductor light-emitting device |
WO2006082468A1 (en) * | 2005-02-03 | 2006-08-10 | S.O.I.Tec Silicon On Insulator Technologies | Method for high-temperature annealing a multilayer wafer |
CN111540783B (en) * | 2020-01-16 | 2023-09-26 | 重庆康佳光电科技有限公司 | Metal-oxide semiconductor field effect transistor and preparation method thereof |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2538722B2 (en) * | 1991-06-20 | 1996-10-02 | 株式会社半導体プロセス研究所 | Method for manufacturing semiconductor device |
KR940009599B1 (en) * | 1991-10-30 | 1994-10-15 | 삼성전자 주식회사 | Forming method of inter-dielectric film for semiconductor device |
US5409858A (en) * | 1993-08-06 | 1995-04-25 | Micron Semiconductor, Inc. | Method for optimizing thermal budgets in fabricating semiconductors |
-
1995
- 1995-06-30 KR KR1019950018554A patent/KR0172039B1/en not_active IP Right Cessation
-
1996
- 1996-02-14 GB GB9603071A patent/GB2302870B/en not_active Expired - Fee Related
- 1996-02-16 JP JP8028788A patent/JPH0917781A/en active Pending
- 1996-02-16 TW TW085102003A patent/TW288166B/en active
- 1996-02-18 DE DE19605787A patent/DE19605787B4/en not_active Expired - Fee Related
- 1996-02-18 CN CN96105729A patent/CN1061635C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE19605787B4 (en) | 2007-05-16 |
CN1061635C (en) | 2001-02-07 |
KR970003653A (en) | 1997-01-28 |
CN1145336A (en) | 1997-03-19 |
TW288166B (en) | 1996-10-11 |
JPH0917781A (en) | 1997-01-17 |
DE19605787A1 (en) | 1997-01-02 |
GB9603071D0 (en) | 1996-04-10 |
KR0172039B1 (en) | 1999-03-30 |
GB2302870A (en) | 1997-02-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20100214 |