GB2302870B - Method of forming a boron phosphorous silicate glass film - Google Patents

Method of forming a boron phosphorous silicate glass film

Info

Publication number
GB2302870B
GB2302870B GB9603071A GB9603071A GB2302870B GB 2302870 B GB2302870 B GB 2302870B GB 9603071 A GB9603071 A GB 9603071A GB 9603071 A GB9603071 A GB 9603071A GB 2302870 B GB2302870 B GB 2302870B
Authority
GB
United Kingdom
Prior art keywords
forming
silicate glass
glass film
phosphorous silicate
boron phosphorous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9603071A
Other versions
GB9603071D0 (en
GB2302870A (en
Inventor
Kyong Sik Yoo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9603071D0 publication Critical patent/GB9603071D0/en
Publication of GB2302870A publication Critical patent/GB2302870A/en
Application granted granted Critical
Publication of GB2302870B publication Critical patent/GB2302870B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/04—Joining glass to metal by means of an interlayer
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
GB9603071A 1995-06-30 1996-02-14 Method of forming a boron phosphorous silicate glass film Expired - Fee Related GB2302870B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950018554A KR0172039B1 (en) 1995-06-30 1995-06-30 Method of forming bpsg

Publications (3)

Publication Number Publication Date
GB9603071D0 GB9603071D0 (en) 1996-04-10
GB2302870A GB2302870A (en) 1997-02-05
GB2302870B true GB2302870B (en) 1999-04-28

Family

ID=19419019

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9603071A Expired - Fee Related GB2302870B (en) 1995-06-30 1996-02-14 Method of forming a boron phosphorous silicate glass film

Country Status (6)

Country Link
JP (1) JPH0917781A (en)
KR (1) KR0172039B1 (en)
CN (1) CN1061635C (en)
DE (1) DE19605787B4 (en)
GB (1) GB2302870B (en)
TW (1) TW288166B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005086240A1 (en) * 2004-03-05 2005-09-15 Showa Denko K.K. Boron phosphide-based semiconductor light-emitting device
WO2006082468A1 (en) * 2005-02-03 2006-08-10 S.O.I.Tec Silicon On Insulator Technologies Method for high-temperature annealing a multilayer wafer
CN111540783B (en) * 2020-01-16 2023-09-26 重庆康佳光电科技有限公司 Metal-oxide semiconductor field effect transistor and preparation method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2538722B2 (en) * 1991-06-20 1996-10-02 株式会社半導体プロセス研究所 Method for manufacturing semiconductor device
KR940009599B1 (en) * 1991-10-30 1994-10-15 삼성전자 주식회사 Forming method of inter-dielectric film for semiconductor device
US5409858A (en) * 1993-08-06 1995-04-25 Micron Semiconductor, Inc. Method for optimizing thermal budgets in fabricating semiconductors

Also Published As

Publication number Publication date
DE19605787B4 (en) 2007-05-16
CN1061635C (en) 2001-02-07
KR970003653A (en) 1997-01-28
CN1145336A (en) 1997-03-19
TW288166B (en) 1996-10-11
JPH0917781A (en) 1997-01-17
DE19605787A1 (en) 1997-01-02
GB9603071D0 (en) 1996-04-10
KR0172039B1 (en) 1999-03-30
GB2302870A (en) 1997-02-05

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20100214