KR970003653A - Boron Phosphorus Silicate Glass (BPSG) Film Formation Method - Google Patents

Boron Phosphorus Silicate Glass (BPSG) Film Formation Method Download PDF

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Publication number
KR970003653A
KR970003653A KR1019950018554A KR19950018554A KR970003653A KR 970003653 A KR970003653 A KR 970003653A KR 1019950018554 A KR1019950018554 A KR 1019950018554A KR 19950018554 A KR19950018554 A KR 19950018554A KR 970003653 A KR970003653 A KR 970003653A
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KR
South Korea
Prior art keywords
bpsg
temperature
bpsg film
heat treatment
forming
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Application number
KR1019950018554A
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Korean (ko)
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KR0172039B1 (en
Inventor
유경식
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950018554A priority Critical patent/KR0172039B1/en
Priority to GB9603071A priority patent/GB2302870B/en
Priority to TW085102003A priority patent/TW288166B/en
Priority to JP8028788A priority patent/JPH0917781A/en
Priority to DE19605787A priority patent/DE19605787B4/en
Priority to CN96105729A priority patent/CN1061635C/en
Publication of KR970003653A publication Critical patent/KR970003653A/en
Application granted granted Critical
Publication of KR0172039B1 publication Critical patent/KR0172039B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/04—Joining glass to metal by means of an interlayer
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

본 발명은 BPSG막 형성방법이 개시된다.The present invention discloses a method for forming a BPSG film.

본 발명은 BPSG막 평탄화를 위한 열처리공정후 온도 강하 속도를 빠르게 하고, 고온에서 방출이 이루어지도록 하여 내부에 급냉 영역과 서냉 영역의 구조를 갖는 BPSG막을 형성한다.The present invention forms a BPSG film having a structure of a quenching region and a slow cooling region therein by accelerating the temperature drop rate after the heat treatment process for planarization of the BPSG film, and allowing the release at a high temperature.

따라서, 본 발명은 BPSG 증착시 표면 평탄성을 높이기 위해 기존의 BPSG 증착시 보다 불순물을 다량 주입하여도 증착직후의 막질 불안정과 수분 흡습성의 증가와 열처리 공정 중 불순물의 외방확산에 의한 입자 생성가능성 특히, 결정 석출물(crystal defect)생성을 억제할 수 있으며, 또한 수분 흡수로 인한 감광막과의 고착력 저하를 방지할 수 있다.Therefore, the present invention is to increase the surface flatness during the deposition of BPSG, even if a large amount of impurity is injected more than the conventional BPSG deposition, the film quality instability and moisture hygroscopicity immediately after deposition and the possibility of particle generation by the outward diffusion of impurities during the heat treatment process, It is possible to suppress the formation of crystal defects, and also to prevent a decrease in adhesion to the photosensitive film due to moisture absorption.

Description

보론 포스포러스 실리케이트 글래스(BPSG)막 형성방법Boron phosphor silicate glass (BPSG) film formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A 및 제1B도는 본 발명에 의한 BPSG막 형성방법을 설명하기 위해 도시한 소자의 단면도이다.1A and 1B are sectional views of the device shown for explaining the method for forming a BPSG film according to the present invention.

Claims (5)

BPSG막 형성방법에 있어서, BPSG 증착공정으로 다수의 하부층이 제공된 웨이퍼상에 BPSG막을 형성하는 단계와, 열처리공정으로 상기 증착된 BPSG막의 표면을 평탄화하는 단계와, 급냉공정으로 상기 평탄화된 BPSG막을 일정온도까지 급냉한 후 방출하므로, 이로 인하여 표면은 급냉 영역을 이루고, 내부는 서냉 영역을 이루는 BPSG막이 형성되도록 하는 단계로 이루어지는 것을 특징으로 하는 BPSG막 형성방법.A method of forming a BPSG film, comprising: forming a BPSG film on a wafer provided with a plurality of lower layers by a BPSG deposition process, planarizing a surface of the deposited BPSG film by a heat treatment process, and uniformly flattening the planarized BPSG film by a quenching process. After quenching to a temperature and then released, the surface is thereby quenched region, the inside of the BPSG film forming method comprising the step of forming a BPSG film forming a slow cooling region. 제1항에 있어서, 상기 열처리공정은 BPSG의 전이온도보다 25 내지 35% 정도 높은 온도에서 실시되는 것을 특징으로 하는 BPSG막 형성방법.The method of claim 1, wherein the heat treatment step is performed at a temperature of about 25 to 35% higher than the transition temperature of the BPSG. 제1 또는 2항에 있어서, 상기 열처리공정은 800 내지 950℃의 온도범위에서 실시되는 것을 특징으로 하는 BPSG막 형성방법.The method of claim 1, wherein the heat treatment is performed at a temperature in the range of 800 to 950 ° C. 4. 제1항에 있어서, 상기 급냉공정은 온도 강하 속도를 20 내지 50℃/min으로 하여 상기 열처리공정 온도의 90 내지 95% 정도의 온도가 될때까지 실시되는 것을 특징으로 하는 BPSG막 형성방법.The method of claim 1, wherein the quenching process is performed at a temperature drop rate of 20 to 50 ° C./min until the temperature is about 90 to 95% of the temperature of the heat treatment step. 제1 또는 4항에 있어서, 상기 급냉공정은 상기 열처리공정 온도인 800 내지 950℃의 온도로부터 20 내지 30℃/min의 온도 강하 속도로 700 내지 900℃의 온도범위가 될때까지 실시되는 것을 특징으로 하는 BPSG막 형성방법.The method of claim 1, wherein the quenching process is carried out from the temperature of the heat treatment step temperature from 800 to 950 ℃ until the temperature range of 700 to 900 ℃ at a temperature drop rate of 20 to 30 ℃ / min BPSG film formation method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950018554A 1995-06-30 1995-06-30 Method of forming bpsg KR0172039B1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019950018554A KR0172039B1 (en) 1995-06-30 1995-06-30 Method of forming bpsg
GB9603071A GB2302870B (en) 1995-06-30 1996-02-14 Method of forming a boron phosphorous silicate glass film
TW085102003A TW288166B (en) 1995-06-30 1996-02-16 The method of forming BPSG film
JP8028788A JPH0917781A (en) 1995-06-30 1996-02-16 Formation of bpsg film
DE19605787A DE19605787B4 (en) 1995-06-30 1996-02-18 Process for the preparation of a borophosphosilicate glass film
CN96105729A CN1061635C (en) 1995-06-30 1996-02-18 Method of forming boron phosphorous silicate glass film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950018554A KR0172039B1 (en) 1995-06-30 1995-06-30 Method of forming bpsg

Publications (2)

Publication Number Publication Date
KR970003653A true KR970003653A (en) 1997-01-28
KR0172039B1 KR0172039B1 (en) 1999-03-30

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KR1019950018554A KR0172039B1 (en) 1995-06-30 1995-06-30 Method of forming bpsg

Country Status (6)

Country Link
JP (1) JPH0917781A (en)
KR (1) KR0172039B1 (en)
CN (1) CN1061635C (en)
DE (1) DE19605787B4 (en)
GB (1) GB2302870B (en)
TW (1) TW288166B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100802451B1 (en) * 2004-03-05 2008-02-13 쇼와 덴코 가부시키가이샤 Boron phosphide-based semiconductor light-emitting device
WO2006082468A1 (en) * 2005-02-03 2006-08-10 S.O.I.Tec Silicon On Insulator Technologies Method for high-temperature annealing a multilayer wafer
CN111540783B (en) * 2020-01-16 2023-09-26 重庆康佳光电科技有限公司 Metal-oxide semiconductor field effect transistor and preparation method thereof

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JP2538722B2 (en) * 1991-06-20 1996-10-02 株式会社半導体プロセス研究所 Method for manufacturing semiconductor device
KR940009599B1 (en) * 1991-10-30 1994-10-15 삼성전자 주식회사 Forming method of inter-dielectric film for semiconductor device
US5409858A (en) * 1993-08-06 1995-04-25 Micron Semiconductor, Inc. Method for optimizing thermal budgets in fabricating semiconductors

Also Published As

Publication number Publication date
JPH0917781A (en) 1997-01-17
TW288166B (en) 1996-10-11
KR0172039B1 (en) 1999-03-30
DE19605787B4 (en) 2007-05-16
GB9603071D0 (en) 1996-04-10
GB2302870A (en) 1997-02-05
CN1061635C (en) 2001-02-07
CN1145336A (en) 1997-03-19
GB2302870B (en) 1999-04-28
DE19605787A1 (en) 1997-01-02

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