JPH0411722A - Forming method of semiconductor crystallized film - Google Patents

Forming method of semiconductor crystallized film

Info

Publication number
JPH0411722A
JPH0411722A JP11481290A JP11481290A JPH0411722A JP H0411722 A JPH0411722 A JP H0411722A JP 11481290 A JP11481290 A JP 11481290A JP 11481290 A JP11481290 A JP 11481290A JP H0411722 A JPH0411722 A JP H0411722A
Authority
JP
Japan
Prior art keywords
film
melted
layer
laser beams
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11481290A
Inventor
Yoshiteru Nitta
Kiyonari Tanaka
Kenji Tomita
Noritoshi Yamaguchi
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP11481290A priority Critical patent/JPH0411722A/en
Publication of JPH0411722A publication Critical patent/JPH0411722A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To reduce the taking-in of oxygen atoms into an amorphous or polycrystalline semiconductor film when the semiconductor film is melted and solidified by applying laser beams so that the upper layer section of the semiconductor film is melted but a lower section is not melted,
CONSTITUTION: A foundation layer 2, an amorphous or polycrystalline semiconductor film 3 and a protective film 4 are formed successively on a substrate l, laser beams R are applied from the upper section of the film 14, and the film 3 is crystallized and a crystallized film 5 is formed. Beams R are applied under the state, in which the lower layer section of the film 3 is not melted, by properly adjusting the thickness of the film 3, the intensity of laser beams and the scanning speed of laser beams at that time. Consequently, the constituent elements of a silicon oxide film (the layer 2) shaped to the lower layer of the film 3 is not mixed into the film 5, and oxygen atoms in the film 5 are reduced only by approximately one figure. Accordingly, since no impurity mixes to the film 5 from the layer 2, the speed of response can be increased when a transistor is formed by the film 5 while a back channel can be prevented effective1y when the surface sections of the film 4 and the film 5 are removed partially and the thin-film transistor is formed.
COPYRIGHT: (C)1992,JPO&Japio
JP11481290A 1990-04-28 1990-04-28 Forming method of semiconductor crystallized film Pending JPH0411722A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11481290A JPH0411722A (en) 1990-04-28 1990-04-28 Forming method of semiconductor crystallized film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11481290A JPH0411722A (en) 1990-04-28 1990-04-28 Forming method of semiconductor crystallized film

Publications (1)

Publication Number Publication Date
JPH0411722A true JPH0411722A (en) 1992-01-16

Family

ID=14647302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11481290A Pending JPH0411722A (en) 1990-04-28 1990-04-28 Forming method of semiconductor crystallized film

Country Status (1)

Country Link
JP (1) JPH0411722A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5605846A (en) * 1994-02-23 1997-02-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US5637515A (en) * 1993-08-12 1997-06-10 Semiconductor Energy Laboratory Co., Ltd. Method of making thin film transistor using lateral crystallization
US5773309A (en) * 1994-10-14 1998-06-30 The Regents Of The University Of California Method for producing silicon thin-film transistors with enhanced forward current drive
US6201281B1 (en) 1993-07-07 2001-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
US6285042B1 (en) 1993-10-29 2001-09-04 Semiconductor Energy Laboratory Co., Ltd. Active Matry Display
US6455875B2 (en) 1992-10-09 2002-09-24 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having enhanced field mobility
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6984550B2 (en) 2001-02-28 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7235828B2 (en) 1994-02-23 2007-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with residual nickel from crystallization of semiconductor film

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7602020B2 (en) 1992-10-09 2009-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7723788B2 (en) 1992-10-09 2010-05-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US8017506B2 (en) 1992-10-09 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7109108B2 (en) 1992-10-09 2006-09-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device having metal silicide
US6455875B2 (en) 1992-10-09 2002-09-24 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having enhanced field mobility
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6790749B2 (en) 1992-10-09 2004-09-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6569719B2 (en) 1993-07-07 2003-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
US6201281B1 (en) 1993-07-07 2001-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
US6784453B2 (en) 1993-07-07 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
US5637515A (en) * 1993-08-12 1997-06-10 Semiconductor Energy Laboratory Co., Ltd. Method of making thin film transistor using lateral crystallization
US7998844B2 (en) 1993-10-29 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6998639B2 (en) 1993-10-29 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6335541B1 (en) 1993-10-29 2002-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film transistor with crystal orientation
US6285042B1 (en) 1993-10-29 2001-09-04 Semiconductor Energy Laboratory Co., Ltd. Active Matry Display
US7235828B2 (en) 1994-02-23 2007-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with residual nickel from crystallization of semiconductor film
US5605846A (en) * 1994-02-23 1997-02-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7749819B2 (en) 1994-02-23 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US5773309A (en) * 1994-10-14 1998-06-30 The Regents Of The University Of California Method for producing silicon thin-film transistors with enhanced forward current drive
US6984550B2 (en) 2001-02-28 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7405115B2 (en) 2001-02-28 2008-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9330940B2 (en) 2001-02-28 2016-05-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

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