JPH0411722A - Forming method of semiconductor crystallized film - Google Patents
Forming method of semiconductor crystallized filmInfo
- Publication number
- JPH0411722A JPH0411722A JP11481290A JP11481290A JPH0411722A JP H0411722 A JPH0411722 A JP H0411722A JP 11481290 A JP11481290 A JP 11481290A JP 11481290 A JP11481290 A JP 11481290A JP H0411722 A JPH0411722 A JP H0411722A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor film
- crystallized
- melted
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000001681 protective effect Effects 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 abstract description 102
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 10
- 239000012535 impurity Substances 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 4
- 239000000470 constituent Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 25
- 239000007789 gas Substances 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体結晶化膜の形成方法に関し、特に結晶化
膜中に混入する不純物を減少せしめた半導体結晶化膜の
形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for forming a semiconductor crystallized film, and more particularly to a method for forming a semiconductor crystallized film in which impurities mixed into the crystallized film are reduced.
（従来の技術およびその問題点）
従来から、基板上に形成した非晶質または多結晶半導体
膜にレーザ光を照射して溶融・固化させることにより半
導体膜を結晶化するレーザビーム結晶化法があり、不純
物の混入が少なくて粒径の大きな結晶化膜を作るために
種々の試みが為されている。(Prior art and its problems) Conventionally, a laser beam crystallization method has been used to crystallize an amorphous or polycrystalline semiconductor film formed on a substrate by irradiating laser light to melt and solidify the semiconductor film. Various attempts have been made to create crystallized films with large grain sizes and less contamination of impurities.
例えば特公昭６ｍ−１６７５８号公報には、基板からの
汚染を防いだり、基板との熱膨張率の相違を緩和するた
めに、非晶質または多結晶半導体膜との間に、熱酸化法
で形成した酸化シリコン膜などから成る下地層を介在さ
せるとともに、大気中からの汚染を防いだり、結晶化膜
表面の平坦度を維持するために、非晶質または多結晶半
導体股上に、酸化シリコン膜などから成る保護層を形成
してレーザ光を照射することによって結晶化膜を形成す
ることが開示されている。For example, in Japanese Patent Publication No. 6m-16758, in order to prevent contamination from the substrate and to alleviate the difference in coefficient of thermal expansion with the substrate, a thermal oxidation method is proposed between the film and the amorphous or polycrystalline semiconductor film. In addition to interposing a base layer made of silicon oxide film, etc., a silicon oxide film is placed on top of the amorphous or polycrystalline semiconductor in order to prevent contamination from the atmosphere and maintain the flatness of the surface of the crystallized film. It has been disclosed that a crystallized film is formed by forming a protective layer made of the following and irradiating it with laser light.
下地層と保護膜とで半導体膜を挟んでレーザ光を照射し
て結晶化すると、基板や大気中からの汚染は防止できる
ものの、半導体膜が溶融した際に、半導体膜と接してい
る下地層の上層部分と半導体膜と接している保護膜の下
層部分とが溶融して半導体膜と混然一体となり、半導体
膜中に多数の酸素原子が取り込まれてしまうという問題
があった。If the semiconductor film is sandwiched between a base layer and a protective film and crystallized by irradiation with laser light, contamination from the substrate and the atmosphere can be prevented, but when the semiconductor film melts, the base layer in contact with the semiconductor film There is a problem in that the upper layer portion and the lower layer portion of the protective film that is in contact with the semiconductor film are melted and mixed together with the semiconductor film, and a large number of oxygen atoms are incorporated into the semiconductor film.
すなわち、従来のような構成と方法とで半導体膜を結晶
化すると、半導体膜中に５Ｘ１０Ｉ９個ｃｍ３以上の酸
素原子が存在する。That is, when a semiconductor film is crystallized using the conventional structure and method, 5×10I9 or more cm 3 of oxygen atoms are present in the semiconductor film.
このように多数の酸素原子が混入した半導体膜を使って
トランジスタなどを形成すると、過飽和の酸素原子が数
個集合してクラスターとなり、これがドナーを形成して
しまう。イオン化したドナーは、キャリアの散乱中心と
なるため、半導体膜中での電子および正孔の移動度に悪
影響を与える。When a transistor or the like is formed using a semiconductor film in which a large number of oxygen atoms are mixed in this way, several supersaturated oxygen atoms gather together to form a cluster, which forms a donor. Ionized donors serve as scattering centers for carriers, and therefore adversely affect the mobility of electrons and holes in the semiconductor film.
従って、半導体特性を改善するには、上述のようなサー
マルドナーを消滅させておかなければならない。Therefore, in order to improve semiconductor properties, the above-mentioned thermal donors must be eliminated.
単結晶のシリコン基板を用いた半導体製造プロセスでは
、酸化膜の形成工程や不純物の拡散工程など１０００℃
以上の高温処理工程があるため、サーマルドナーは分解
してしまうが、ガラス基板上に薄膜トランジスタを形成
する場合、高温プロセスがないため、最後までサーマル
ドナーが残ってしまい、応答速度の速いトランジスタを
得ることができないという問題があった。また、８００
℃で１０秒程度のＲＴＰ（ランプアニールによるラビッ
トサーマルプロセス）も有効であるが、ガラス基板をこ
のような高温の炉の中に入れることはできない。In the semiconductor manufacturing process using single-crystal silicon substrates, temperatures of 1000°C are used, including the oxide film formation process and impurity diffusion process.
Due to the high-temperature treatment process described above, the thermal donor decomposes, but when forming a thin film transistor on a glass substrate, there is no high-temperature process, so the thermal donor remains until the end, resulting in a transistor with a fast response speed. The problem was that I couldn't do it. Also, 800
Although RTP (rabbit thermal process using lamp annealing) at a temperature of about 10 seconds at .degree. C. is also effective, the glass substrate cannot be placed in such a high-temperature furnace.
また、半導体膜中の酸素原子を減少させるために、結晶
化した半導体膜の上半分をエツチング除去して、保護層
から混入した酸素原子の影響を少なくすることも考えら
れるが、下地層から結晶化膜の下層部分に混入した酸素
原子は取り除くことはできない。Additionally, in order to reduce the amount of oxygen atoms in the semiconductor film, it is possible to remove the upper half of the crystallized semiconductor film by etching to reduce the effect of oxygen atoms mixed in from the protective layer. Oxygen atoms mixed into the lower layer of the chemical film cannot be removed.
本発明は、このような問題点に鑑みて案出されものであ
り、半導体膜を溶融 固化させる際に半導体膜に酸素原
子が取り込まれることを減少させた半導体結晶化膜の形
成方法を提供することを目的とするものである。The present invention was devised in view of these problems, and provides a method for forming a semiconductor crystallized film that reduces the incorporation of oxygen atoms into the semiconductor film when melting and solidifying the semiconductor film. The purpose is to
（問題点を解決するための手段）
本発明によれば、基板上に、下地層、非晶質または多結
晶半導体膜、および保護膜を順次形成し、半導体膜の上
層部分は溶融するが下層部分は溶融しないような強度を
もっなレーザ光を照射して、半導体膜の下層部分以外を
結晶化する半導体結晶化膜の形成方法が提供され、その
ことにより上記目的が達成される。(Means for Solving the Problems) According to the present invention, a base layer, an amorphous or polycrystalline semiconductor film, and a protective film are sequentially formed on a substrate, and the upper layer of the semiconductor film is melted, but the lower layer is melted. A method for forming a semiconductor crystallized film is provided in which a portion of the semiconductor film other than the lower layer portion is crystallized by irradiating a laser beam with such intensity that the portion does not melt, thereby achieving the above object.
（作用）
上記のように構成することにより、半導体膜にレーザ光
を照射して溶融させても、半導体膜の下層部分は溶融し
ないことから、下地層がら半導体膜に酸素原子などが混
入することはなくなる。(Function) With the above configuration, even if the semiconductor film is irradiated with laser light and melted, the lower layer of the semiconductor film will not melt, so oxygen atoms etc. will not be mixed into the semiconductor film from the base layer. will disappear.
（実施例）
以下、本発明を添付図面に基づき詳細に説明する６
第１図く（支）〜（社）は、本発明に係る半導体結晶化
膜の形成方法を説明するための工程図である。(Example) Hereinafter, the present invention will be explained in detail based on the attached drawings. 6 Figures 1 to 1 are process diagrams for explaining the method for forming a semiconductor crystallized film according to the present invention. be.
まず、＃７０５９基板などからなる基板１上に、下地層
２を形成する（第１図（ａ）参照）。この下地層２は、
酸化シリコン膜、窒化シリコン膜、あるいは炭化シリコ
ン膜などで構成される。下地層２を酸化シリコン膜で構
成する場合は、プラズマＣＶＤ法、光ＣＶＤ法、或いは
熱ＣＶＤ法で形成される。プラズマＣＶＤ法で形成する
場合は、例えばプラズマ反応炉を０１〜５ｔｏｒｒ、好
適には２ｔｏｒｒに減圧して、絶縁基板を１００〜５０
Ｑ″Ｃ２好適には４００℃に維持しながら、Ｎ２０ガス
とＳ ｉＨ４ガスとを流量比（Ｎ２０／５ｉＨ４）が１
〜２００程度、好適には３７になるように反応炉内に供
給して約０．１Ｗ／ｃｍ２〜２Ｗ７ｃｍ２−好適には０
．５Ｗ／ｃｍ”の放電用電源でプラズマ反応を起こさせ
ることにより、絶縁基板ｌ上に３０００〜５００００人
程度の厚みに形成する。First, a base layer 2 is formed on a substrate 1 made of a #7059 substrate or the like (see FIG. 1(a)). This base layer 2 is
It is composed of a silicon oxide film, a silicon nitride film, a silicon carbide film, or the like. When the base layer 2 is made of a silicon oxide film, it is formed by a plasma CVD method, a photo CVD method, or a thermal CVD method. When forming by the plasma CVD method, for example, the pressure of the plasma reactor is reduced to 01 to 5 torr, preferably 2 torr, and the insulating substrate is heated to 100 to 50 torr.
Q″C2 Preferably, while maintaining the temperature at 400°C, the flow rate ratio (N20/5iH4) of N20 gas and SiH4 gas is 1.
- About 200, preferably 37, is supplied into the reactor to give about 0.1W/cm2 to 2W7cm2 - preferably 0.
．． By causing a plasma reaction with a discharge power source of 5 W/cm'', a thickness of about 3,000 to 50,000 layers is formed on an insulating substrate l.
次に、前記下地層２上に、非晶質または多結晶半導体膜
３を形成する。この非晶質または多結晶半導体膜３をシ
リコンで形成する場合、例えば従来周知のプラズマＣＶ
Ｄ法などで１〜３μｍ程度の厚みに形成する。すなわち
、シリコン膜を例えばプラズマＣＶＤ法で形成する場合
、酸化シリコン膜２が被着された絶縁基板１をプラズマ
反応炉に搬入して、モノシラン（ＳｉＨ，）などの水素
化シリコンガスを反応炉に導入し、基板１を１５０〜４
００℃に加熱しながら水素化シリコンガスをプラズマ中
で分解することによって酸化シリコン膜上に形成する。Next, an amorphous or polycrystalline semiconductor film 3 is formed on the base layer 2. When this amorphous or polycrystalline semiconductor film 3 is formed of silicon, for example, a conventional plasma CV method is used.
It is formed to a thickness of about 1 to 3 μm using the D method or the like. That is, when forming a silicon film by, for example, a plasma CVD method, the insulating substrate 1 on which the silicon oxide film 2 is deposited is carried into a plasma reactor, and hydrogenated silicon gas such as monosilane (SiH) is introduced into the reactor. Introduce substrate 1 to 150~4
It is formed on a silicon oxide film by decomposing hydrogenated silicon gas in plasma while heating it to 00°C.
次に、前記非晶質または多結晶半導体膜３上に、保護膜
４を形成する。この保護膜４は、酸化シリコン膜、窒化
シリコン膜、あるいは炭化シリコン膜などで構成される
。保護膜４を酸化シリコン膜で構成する場合は、プラズ
マＣＶＤ法、光ＣＶＤ法、或いは熱ＣＶＤ法で形成され
る。プラズマＣＶＤ法で形成する場合は、例えばプラズ
マ反応炉を０．１〜５ｔｏｒｒ、好適には２ｔｏｒｒに
減圧して、絶縁基板を１００〜５００℃、好適には４０
０℃に維持しながら、Ｎ２ｏガスとＳ ｚ Ｈａカスト
ラ流量比（Ｎ ２０ ／ Ｓ ｚ Ｈ−）が１〜２００
程度、好適には３７になるように反応炉内に供給して約
０１ＩＷ／Ｃｍ２〜２Ｗ／Ｃｍ２、好適には０゜５ Ｗ
／ ｃ ｍ ２の放電用電源でプラズマ反応を起こさ
せることにより、絶縁基板１上に３０００〜５００００
人程度の厚みに形成する。Next, a protective film 4 is formed on the amorphous or polycrystalline semiconductor film 3. This protective film 4 is made of a silicon oxide film, a silicon nitride film, a silicon carbide film, or the like. When the protective film 4 is made of a silicon oxide film, it is formed by a plasma CVD method, a photo CVD method, or a thermal CVD method. When forming by the plasma CVD method, for example, the pressure of the plasma reactor is reduced to 0.1 to 5 torr, preferably 2 torr, and the insulating substrate is heated to 100 to 500°C, preferably 40 torr.
While maintaining the temperature at 0°C, the N2o gas and SzHa castra flow rate ratio (N20/SzH-) was 1 to 200.
It is supplied into the reactor at a level of about 0.1 IW/Cm2 to 2 W/Cm2, preferably 0°5 W.
/cm2 by causing a plasma reaction with a discharge power supply, 3,000 to 50,000
Form to the thickness of a person.
次に、前記保護膜４上から、レーザ光Ｒを照射して非晶
質または多結晶半導体膜３を結晶化して結晶化膜５を形
成する（第１図（（へ）（ｃ）参照）、このレーザ光Ｒ
としては、０．１〜２０Ｗの連続発振アルゴンレーザを
走査速度０．５〜２０ ｃ ｍ ／ ｓｅｃで照射して
非晶質または多結晶半導体膜３を溶融・固化させて結晶
化する。この際〜非晶質または多結晶半導体膜３の下層
部分は溶融しないような状態でレーザ光を照射する。非
晶質または多結晶半導体膜３の下層部分は溶融しないよ
うにするには、半導体膜の厚み、レーザ光の強度、およ
びレーザ光の走査速度を適宜調節すればよい。非晶質ま
たは多結晶半導体膜３の下層部分が溶融しないような状
態でレーザ光を走査すると、非晶質または多結晶半導体
Ｍ３の下層に形成した酸化シリコンＭ２の構成元素が結
晶化膜５中に混入することはなく、結晶化膜５中の酸素
原子は１０１６個ｃ ｍ−’程度となり、半導体膜３を
完全に溶融させた場合の酸素濃度は５Ｘ１０”〜２Ｘ１
０”個Ｃｍ−’程度であるから、本発明によれば約１桁
少なくなる。Next, a laser beam R is irradiated from above the protective film 4 to crystallize the amorphous or polycrystalline semiconductor film 3 to form a crystallized film 5 (see FIG. 1(f)(c)). , this laser beam R
Specifically, the amorphous or polycrystalline semiconductor film 3 is melted and solidified by irradiation with a continuous wave argon laser of 0.1 to 20 W at a scanning speed of 0.5 to 20 cm/sec to crystallize it. At this time, the laser beam is irradiated in such a manner that the lower layer portion of the amorphous or polycrystalline semiconductor film 3 is not melted. In order to prevent the lower layer portion of the amorphous or polycrystalline semiconductor film 3 from melting, the thickness of the semiconductor film, the intensity of the laser beam, and the scanning speed of the laser beam may be adjusted as appropriate. When the laser beam is scanned in a state where the lower layer portion of the amorphous or polycrystalline semiconductor film 3 is not melted, the constituent elements of the silicon oxide M2 formed in the lower layer of the amorphous or polycrystalline semiconductor M3 are transferred into the crystallized film 5. The number of oxygen atoms in the crystallized film 5 is about 1016 cm-', and the oxygen concentration when the semiconductor film 3 is completely melted is 5X10'' to 2X1.
Since it is about 0''Cm-', the present invention reduces the number by about one order of magnitude.
上述のようにして形成した結晶化膜５は、例えば保護層
４と結晶化Ｊｌ１５の表面側部分０．５μｍ程度をエツ
チング除去して、スタガータイプの薄膜トランジスタを
形成する膜として用いられる（第１図（ｄ）参照）。結
晶化膜５中の表面部分をエツチング除去することにより
、保護膜４から混入した酸素原子がリッチな部分は除去
される。また、結晶化しなかった半導体膜３の下層部分
はトランジスタの作用には影響しないことから、非晶質
のままであっても差支えない。The crystallized film 5 formed as described above is used as a film for forming a stagger-type thin film transistor, for example, by etching away about 0.5 μm of the surface side portion of the protective layer 4 and the crystallized Jl 15 (see FIG. 1). (see (d)). By etching away the surface portion of the crystallized film 5, the portion rich in oxygen atoms mixed in from the protective film 4 is removed. Further, since the lower layer portion of the semiconductor film 3 that has not been crystallized does not affect the operation of the transistor, there is no problem even if the lower layer portion of the semiconductor film 3 remains amorphous.
（発明の効果）
以上のように、本発明に係る半導体結晶化膜の形成方法
によれば、半導体膜の表面側部分だけを溶融・固化させ
て結晶化することから、結晶化膜に下地層から不純物が
混入することはなく、もってこの結晶化膜でトランジス
タを形成した場合は、応答速度の速いトランジスタを形
成することがでる。(Effects of the Invention) As described above, according to the method for forming a semiconductor crystallized film according to the present invention, since only the surface side portion of the semiconductor film is melted and solidified to be crystallized, a base layer is formed on the crystallized film. Therefore, when a transistor is formed using this crystallized film, a transistor with a high response speed can be formed.
また、半導体結晶化膜の下層に、非晶質または多結晶の
半導体膜が未溶融のまま残っているため、薄膜トランジ
スタを形成したときに、バックチャネルの防止に効果が
ある。Furthermore, since the amorphous or polycrystalline semiconductor film remains unmelted under the semiconductor crystallized film, it is effective in preventing back channels when a thin film transistor is formed.
第１図（ａ＞〜（社）は、それぞれ本発明に係る半導体
結晶化膜の形成方法を説明するための図である。
■二基板 ２：下地層
３：非晶質または多結晶半導体膜
４：保護膜 ５ 結晶化膜Figures 1(a) to 1(a) are diagrams for explaining the method of forming a semiconductor crystallized film according to the present invention. ■Two substrates 2: Base layer 3: Amorphous or polycrystalline semiconductor film 4: Protective film 5 Crystallized film
Claims (1)
よび保護膜を順次形成し、半導体膜の上層部分は溶融す
るが下層部分は溶融しないような強度のレーザ光を照射
して、前記半導体膜の下層部分以外を結晶化する半導体
結晶化膜の形成方法。A base layer, an amorphous or polycrystalline semiconductor film, and a protective film are sequentially formed on a substrate, and a laser beam is irradiated with such intensity that the upper layer of the semiconductor film is melted but the lower layer is not melted. A method for forming a semiconductor crystallized film in which parts other than the lower layer of the semiconductor film are crystallized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11481290A JPH0411722A (en) | 1990-04-28 | 1990-04-28 | Forming method of semiconductor crystallized film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11481290A JPH0411722A (en) | 1990-04-28 | 1990-04-28 | Forming method of semiconductor crystallized film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0411722A true JPH0411722A (en) | 1992-01-16 |
Family
ID=14647302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11481290A Pending JPH0411722A (en) | 1990-04-28 | 1990-04-28 | Forming method of semiconductor crystallized film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0411722A (en) |
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-
1990
- 1990-04-28 JP JP11481290A patent/JPH0411722A/en active Pending
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