JPS63299322A - Formation of single crystal silicon film - Google Patents
Formation of single crystal silicon filmInfo
- Publication number
- JPS63299322A JPS63299322A JP13552387A JP13552387A JPS63299322A JP S63299322 A JPS63299322 A JP S63299322A JP 13552387 A JP13552387 A JP 13552387A JP 13552387 A JP13552387 A JP 13552387A JP S63299322 A JPS63299322 A JP S63299322A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon film
- single crystal
- film
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 22
- 230000015572 biosynthetic process Effects 0.000 title claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000001301 oxygen Substances 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 7
- 238000005054 agglomeration Methods 0.000 abstract description 7
- 230000002776 aggregation Effects 0.000 abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 7
- 239000012212 insulator Substances 0.000 abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 239000010453 quartz Substances 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 3
- 230000003014 reinforcing effect Effects 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000009751 slip forming Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 4
- 238000009736 wetting Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、単結晶シリコン膜の形成方法、特に、絶縁膜
、あるいは絶縁基板等の絶縁体上に単結晶シリコン膜を
形成するいわゆるＳｏｌ技術による単結晶シリコン膜の
形成方法に係わる。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for forming a single crystal silicon film, particularly a so-called Sol technology for forming a single crystal silicon film on an insulator such as an insulating film or an insulating substrate. The present invention relates to a method of forming a single crystal silicon film using a method of forming a single crystal silicon film.
本発明はＳｏｌ技術における単結晶シリコン膜の形成方
法において、多結晶または非晶質シリコン膜の上面また
はト面の一方に窒素と酸素とを含むシリコン膜を形成し
、熱処理することによって単結晶シリコン膜を得るもの
であり、このようにして結晶性および膜性状に優れた単
結晶シリコン膜を再現性よく得ることができるようにす
る。The present invention relates to a method for forming a single crystal silicon film in the Sol technology, in which a silicon film containing nitrogen and oxygen is formed on one of the top or bottom surfaces of a polycrystalline or amorphous silicon film, and a single crystal silicon film is formed by heat treatment. In this way, a single crystal silicon film with excellent crystallinity and film properties can be obtained with good reproducibility.
〔従来の技術」
絶縁膜あるいは絶縁基板等の絶縁体上にシリコン単結晶
膜を形成するいわゆるＳｏｌ技術は例えばプレスジャー
ナル社発行のセミコンダクタ・ワールド（Ｓｅｍｉｃｏ
ｎｄｕｃｔｏｒ Ｗｏｒｌｄ ） １９８５．４第１０
８真〜第１１５頁に開丞されているところであり、この
Ｓｏｌ技術は各種半導体装置の製造において急速に広く
実用化されるに至っている。[Prior art] The so-called Sol technology, which forms a silicon single crystal film on an insulator such as an insulating film or an insulating substrate, is described in, for example, Semiconductor World published by Press Journal.
ndductor World) 1985.4 No. 10
It is published on pages 8 to 115, and this Sol technology has rapidly come into widespread practical use in the manufacture of various semiconductor devices.
このようにＳｏｌ技術によって単結晶シリコンｌ−を形
成するにあたりアニールすなわち加熱処理による再結晶
法を用いる場合、加熱処理時に際してシリコン層に剥が
れ、あるいはポールアップすなわち粒状ないしは塊状化
が発生して結晶性や膜性状を低下させるようなことが生
じないように、シリコン層上にキャップ層として５ｉＣ
ｈ層とＳｂＮ＋ｊ―を積層形成することが行われる。あ
るいはシリコン層の上下に厚さ５０Å以下のＳｉ３Ｎ４
層を配したサンドインチ構造とし、これの上に上述のキ
ャップ層として例えば２μｍの５ｉ０２１＠と、さらに
その上に厚さ６００人のＳｉ３Ｎ４層を被着形成し、サ
ントイ７チ構造の窒素Ｎを含むＳｉ：＋Ｎ４層によって
シリコンの再結晶化のアニール時における溶融状態でド
地のＳｉ０２層とのいわゆるぬれをよくし剥れ等による
シリコン層の粒状化ないしは塊状化の防止をより効果的
に１＃て良質の単結晶シリコン膜を形成することの提案
が例えば、マティリアルズ・リサーチ・ソサイアティ・
シンポジウム・プロシーディング Ｖｏｌ、 ５３．１
９８６マテイリアルズ・リサーチ・’／サイアティ第４
５〜５１頁（Ｍａｔｅｒｔａｌｓ ）ｌｅｓｅａｒｃｈ
Ｓｏｃｉｅｔｙ Ｓｙｎｐｏｓｉｕｍ Ｐｒｏｃｅ
ｅｄｉｎｇ Ｖｏｌ、 ５３＋ １９８６＋Ｍａ
ｔｅｒｉａｌｓ Ｒｅ５ｅａｒｃｈ ５ｏｃｉｅｔｙ）
及び同第５３〜５８真においてなされている。In this way, when a recrystallization method using annealing, that is, heat treatment, is used to form single crystal silicon l- using the Sol technology, the silicon layer may peel off during the heat treatment, or pole-up, that is, granulation or agglomeration may occur, resulting in crystallinity. 5iC was added as a cap layer on the silicon layer to prevent any deterioration of the film properties.
Lamination of the h layer and SbN+j- is performed. Or Si3N4 with a thickness of 50 Å or less above and below the silicon layer.
On top of this, for example, 2 μm of 5i021@ is deposited as the above-mentioned cap layer, and a Si3N4 layer with a thickness of 600 μm is deposited on top of this, and nitrogen N of the Santoy 7-chi structure is formed. The Si:+N4 layer improves wetting with the underlying Si02 layer in the molten state during silicon recrystallization annealing, and more effectively prevents graining or agglomeration of the silicon layer due to peeling etc.1 For example, a proposal to form high-quality single-crystal silicon films using
Symposium Proceedings Vol. 53.1
986 Materials Research'/Saiati No. 4
Pages 5-51 (Matertals) research
Society Symposium Process
eding Vol, 53+ 1986+Ma
terials Research 5ociety)
and in the same Nos. 53-58.
しかしながら、このようにキャップ層を設けて再結晶化
のアニール例えば、エキシマレーザ−（紫外線波長２４
９ｎａ＋ ）の照射を行う場合、キャップ層としてのＳ
ｉ３Ｎ＋層でこのエキシマレーザ−光の吸収が高いため
にシリコン層での結晶化のだめの溶融が効果的に行われ
ずまた前者の方法では窒素Ｎのぬれの向上の効果かえら
れず、シリコン層の粒状ないしは塊状化いわゆるアグロ
マレイション（八Ｂｌｏｍｅｒａｔｉｏｎ ）の発生を
防止する効果が得がたい。また前述した後者の方法のＳ
ｉ３Ｎ＋によるサンドインチ構造をとる場合には、上述
したアグロマレイション防止効果は得られるものの、こ
の場合Ｓｉ３Ｎ４層を使用することがらＮの含有量が５
’／原子％に及ぶ大きな量であること、またその膜厚制
御が困難であることによって実質的に窒素Ｎの総量の制
御がむずかしいという問題があるものである。そして、
このような窒素Ｎが多量に含まれる場合、これがドナー
として作用することがら、得られた車結畠シリコン層が
ｎ型化される仰向があり、またこの窒素Ｎの量が多くな
るとダングリングボンドが多く存在することによって例
えば（１００）結晶面の単結晶シリコン層の出現を妨げ
るという不都合が生じる。またその窒化膜の厚さが大と
なればそれ自体のアニール時の亀裂等の問題が発生して
くる。However, when a cap layer is provided in this way, recrystallization annealing is performed using, for example, an excimer laser (ultraviolet wavelength 24
9na+), S as a cap layer
Due to the high absorption of this excimer laser light in the i3N+ layer, the crystallization in the silicon layer is not effectively melted, and the former method does not improve the wetting of nitrogen N, resulting in grainy or It is difficult to obtain the effect of preventing the occurrence of clumping, so-called agglomeration. Also, the S of the latter method mentioned above
In the case of a sand inch structure using i3N+, the above-mentioned agglomeration prevention effect can be obtained, but in this case, since a Si3N4 layer is used, the N content is 5.
There is a problem in that it is difficult to control the total amount of nitrogen N because the amount is as large as 0/atomic % and it is difficult to control the film thickness. and,
When a large amount of such nitrogen N is contained, it acts as a donor, so that the resulting silicon layer becomes n-type, and when the amount of nitrogen N is large, dangling occurs. The presence of many bonds causes the disadvantage that, for example, the appearance of a single crystal silicon layer with a (100) crystal plane is hindered. Furthermore, if the thickness of the nitride film becomes large, problems such as cracks may occur during annealing of the nitride film itself.
また、上述した窒素Ｎに変えて炭素Ｃを用いることが考
えられるが、この場合においても上述したドナーとして
の作用についての不都合が回避されるものの、他の問題
については同様の問題が残る。It is also possible to use carbon C instead of the nitrogen N described above, but in this case as well, although the disadvantages regarding the donor function described above are avoided, other problems remain similar.
・〔発明が解決しようとする問題点〕
本発明は上述した諸問題を解決し、制御性よく且つ再現
性よく良質の膜性状および結晶性を有するＳＯｌによる
単結晶シリコン膜の形成方法を提供するものである。- [Problems to be Solved by the Invention] The present invention solves the above-mentioned problems and provides a method for forming a single crystal silicon film using SOI that has good film properties and crystallinity with good controllability and reproducibility. It is something.
〔問題点を解決するための手段」
本発明においては、非晶質シリコン膜の上面または下面
のうちの少なくとも一方に窒素と酸素とを含むシリコン
ＩＱ ５ｉｚ−ｘ−ｙＮｘＯｙよりなるシリコン膜を形
成し、熱処理して再結晶化処理を行って単結晶シリコン
膜を得る。[Means for Solving the Problems] In the present invention, a silicon film made of silicon IQ 5iz-x-yNxOy containing nitrogen and oxygen is formed on at least one of the upper surface and the lower surface of the amorphous silicon film. , heat treatment and recrystallization treatment are performed to obtain a single crystal silicon film.
少なくとも一方の面に形成するようにしたことによって
、このシリコン膜の結晶化のための熱処理時におけるシ
リコン層の溶融時のぬれが良好に行なわれ、膜状の保護
、従って上述したアグロマレイションの発生を効果的に
防止することができて膜性状の向上と、結晶性の向上が
はかられることが確認された。By forming it on at least one surface, wetting of the silicon layer during melting during the heat treatment for crystallization of the silicon film is performed well, and the film-like protection and therefore the above-mentioned agglomeration can be prevented. It was confirmed that it was possible to effectively prevent the occurrence of oxidation, thereby improving film properties and crystallinity.
例えば石英よりなる絶縁体（１１）上に、非晶質のシリ
コンナイトライドオキサイド５ｉ１−ｘ−ｙＮｘＯｙ（
０くｙ≦３）層（１１を、３００人から２０人イ列えば
５０人の厚さに被着形成し、続いてこれの上に多結晶と
同様の組成および膜厚範囲にあるシリコンナイトライド
層（３）を夫々連続的にプラズマＣＶＤ法あるいは光Ｃ
ＶＤ法によって形成する・
これら層（１）〜（３）の各原料気体は、Ａｒあるいは
Ｈ２キャリヤガスに、窒素Ｎの原料としてＮ２あるいは
Ｎ Ｈ３を、またシリコンＳｔの原料としてＳｉＨ４あ
るいはＳ ｉ２Ｈεを、更に酸＠ ０２ガスとを用いそ
れぞれ所要の比率をもってこれら原料ガスの混入量を変
化させながら、気相成長させて被着する。For example, amorphous silicon nitride oxide 5i1-x-yNxOy (
0xy≦3) layer (11) is deposited to a thickness of 300 to 20 people, 50 people, and then siliconite having the same composition and thickness range as the polycrystalline layer is formed on top of this. Each of the ride layers (3) is successively coated with plasma CVD or photoC.
Formed by the VD method. The raw material gases for these layers (1) to (3) are Ar or H2 carrier gas, N2 or NH3 as the raw material for nitrogen N, and SiH4 or Si2Hε as the raw material for silicon St. , and acid@02 gas, while changing the amounts of these raw material gases mixed in at the required ratios, and deposited by vapor phase growth.
その後Ｎ２雰囲気中で４００〜５００℃の５〜ｌＯ時間
の熱処理を行って各層に含まれる水素Ｈを排出する。Thereafter, heat treatment is performed at 400 to 500° C. for 5 to 10 hours in an N2 atmosphere to discharge hydrogen H contained in each layer.
その後第２図に示すように、シリコンナイトライド層（
３）上に補強層として例えば１μ請以上、例えば２μ−
のＳｉＯ２層（４）を被着する。Thereafter, as shown in Figure 2, a silicon nitride layer (
3) As a reinforcing layer on top, for example, 1 μm or more, for example 2 μ-
A layer of SiO2 (4) is deposited.
そして最終的に製造しようとする半導体装置において単
結晶層を部分的に所要のパターンをもって形成する場合
など、必要に応じて各シリコン層（４１（３１（２１（
１）の不要部分をプラズマエツチング等によって除去し
、石英絶縁体（１１）上に所定のパターンのシリコン層
を形成し、その後加熱処理すなゎちアニールを、例えば
ゾーンメルト法あるいは連続発振レーザー光もしくはパ
ルスレーザ−光例えばパルスエキシマレーザ−光を照射
して、各層（１）〜（３）が再結晶化された単結晶シリ
コン層を得る。Then, when forming a single crystal layer partially with a desired pattern in a semiconductor device to be finally manufactured, each silicon layer (41 (31 (21)
Unnecessary portions of 1) are removed by plasma etching or the like, a silicon layer with a predetermined pattern is formed on the quartz insulator (11), and then heat treatment or annealing is performed using, for example, zone melting or continuous wave laser light. Alternatively, a single crystal silicon layer in which each layer (1) to (3) is recrystallized is obtained by irradiating with pulsed laser light, for example, pulsed excimer laser light.
その後、必要に応じてキャンピング層としての５Ｌ０２
層（４）をエツチング除去し、各種半導体の製造例えば
トランジスタその他の半導体素子の形成を行い目的とす
る半導体装置を得る。After that, 5L02 as a camping layer if necessary.
The layer (4) is removed by etching, and various semiconductors are manufactured, such as transistors and other semiconductor elements, to obtain the desired semiconductor device.
向、上述した例では、シリコン層（２）を５ｉ１−ｘ−
ｙＮｘＯｙ層＋１）及び（３）によって挟み込んだサン
ドウィッチ構造とした場合であるが、これらサンドウィ
ンナ構造によらず、シリコン層（２）の一方の面にのみ
５Ｌ１−ｘ−ｙＮｘＯｙ層の形成を行うとか、Ｊｉｊｌ
（１）〜（３）より成るサンドウィッチ構造上に、或
いは上層の層（３）を省略してこれの上に例えば１００
０人の厚さの５ｈ−ｘ−ｙＮｘＯｙ層を被着して、これ
の上ニ５ｉ０２補強層（４）の形成を行うこともできる
。In the above example, the silicon layer (2) is 5i1-x-
This is a case of a sandwich structure in which the 5L1-x-yNxOy layer is sandwiched between the yNxOy layers +1) and (3), but the 5L1-x-yNxOy layer is formed only on one side of the silicon layer (2), regardless of these sandwich structures. , Jijl
On the sandwich structure consisting of (1) to (3), or omitting the upper layer (3), for example, 100
It is also possible to deposit a layer of 5h-x-yNxOy with a thickness of 0,000 yen and form the 5i02 reinforcing layer (4) on top of this.
また、上述の５ｉ１−ｘ−ｙＮｘＯｙより成る各層は、
プラズマＣＶＤ、光学的ＣＶＬ）等によって形成できる
ものであるが、これら層はそのシリコン層（２）と接す
る界面に向って漸次Ｎの濃度を低めて５ｉ（ｈの組成に
近づく組成とする厚さ方向の濃度プロファイルを有する
ようにすることもできる。Moreover, each layer consisting of the above-mentioned 5i1-x-yNxOy is
These layers can be formed by plasma CVD, optical CVL), etc., but the thickness of these layers is such that the concentration of N is gradually lowered toward the interface in contact with the silicon layer (2) so that the composition approaches 5i (h). It is also possible to have a directional concentration profile.
また、上述した例においては、石英基板よりなる絶縁体
（１１）上に単結晶シリコン膜の形成を行う場合につい
て説明したが、石英基板に限らずその他各種の絶縁基板
に通用することもできるし、また基板として単結晶シリ
コンあるいはサファイア等の単結晶基板上に５ｉ０２下
地膜を形成し、この５ｔＯ２下地膜に窓明けを行ってこ
れの上にシリコンｌ−の形成を行い単結晶基板をシード
としてこれより単結晶化を行う方法による従来周知の各
種Ｓｏｌに通用し得る。Further, in the above example, a case was explained in which a single crystal silicon film was formed on an insulator (11) made of a quartz substrate, but it can be applied not only to a quartz substrate but also to various other insulating substrates. In addition, a 5i02 base film is formed on a single crystal substrate such as single crystal silicon or sapphire as a substrate, a window is opened in this 5tO2 base film, and silicon l- is formed on this, and the single crystal substrate is used as a seed. From this, it can be applied to various conventionally known Sol methods using single crystallization methods.
〔発明の効果Ｊ
上述したように本発明においては、シリコン層の少くと
も一方の面に、いわばキャッピング用の５ｉ０２中にＮ
を導入した５ｉ１−ｘ−ｙＮｘＯｙ層を配するようにし
たので、Ｓｉ層のぬれを良（し、キャップ層として機能
、すなわちアグロマレイションの発生を効果的に回避で
きると共にこのように５ｔＯ２中にＮを導入した構成と
したことによって、Ｎの濃度の選定の自由度が増し、例
えば冒頭に述べた５ｉｉＮ４を用いる場合におけるエキ
シマ−レーザ光照射における吸収の問題を回避でき、更
にその厚さ方向の濃度分布を選定してＳｉ層との界面で
は、Ｎの濃度を小さくしてＳｉＯ２の組成に近づけるよ
うにしてダングリングボンドの存在を少くし、単結晶シ
リコン膜が例えば（１００）結晶面に沿う腺として良好
に育成できるなど再現性良く結晶性及び膜性状にすぐれ
た単結晶シリコン膜を形成できる。またＮの濃度が必要
以上に高くしないことによるシリコン層ドナーとしての
機能によるｎ型化を回避できるなどの効果をもたらす。[Effect of the invention J As described above, in the present invention, N is added to at least one surface of the silicon layer in 5i02 for capping.
By disposing the 5i1-x-yNxOy layer in which 5i1-x-yNxOy is introduced, it is possible to improve the wetting of the Si layer and function as a cap layer, that is, to effectively avoid the occurrence of agglomeration. By adopting a structure that introduces N, the degree of freedom in selecting the concentration of N increases, and for example, when using 5iiN4 mentioned at the beginning, the problem of absorption during excimer laser beam irradiation can be avoided, and furthermore, the problem of absorption in the excimer laser beam irradiation can be avoided. By selecting the concentration distribution and reducing the concentration of N at the interface with the Si layer so that it approaches the composition of SiO2, the presence of dangling bonds is reduced, and the single-crystal silicon film follows, for example, the (100) crystal plane. It is possible to form a single crystal silicon film with excellent crystallinity and film properties with good reproducibility, such as the ability to grow well as a gland.Also, by not increasing the concentration of N more than necessary, it can avoid becoming n-type due to its function as a silicon layer donor. It brings about effects such as being able to do things.
第１図およびＮＳ ２図は本発明による単結晶シリコン
膜の形成方法の説明に供する各工程の路線的拡大断面図
である。
（１１）は絶縁体、（１）〜（３）は第１〜第３の層で
ある。FIG. 1 and FIG. NS2 are enlarged cross-sectional views showing each step of the method for forming a single-crystal silicon film according to the present invention. (11) is an insulator, and (1) to (3) are first to third layers.
Claims (1)
の少なくとも一方に窒素と酸素とを含むシリコン膜を形
成し、熱処理して単結晶シリコン膜を得ることを特徴と
する単結晶シリコン膜の形成方法。Formation of a single crystal silicon film characterized by forming a silicon film containing nitrogen and oxygen on at least one of the upper surface or the lower surface of a polycrystalline or amorphous silicon film and heat-treating it to obtain a single crystal silicon film. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13552387A JPS63299322A (en) | 1987-05-29 | 1987-05-29 | Formation of single crystal silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13552387A JPS63299322A (en) | 1987-05-29 | 1987-05-29 | Formation of single crystal silicon film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63299322A true JPS63299322A (en) | 1988-12-06 |
Family
ID=15153760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13552387A Pending JPS63299322A (en) | 1987-05-29 | 1987-05-29 | Formation of single crystal silicon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63299322A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02256227A (en) * | 1988-11-30 | 1990-10-17 | Ricoh Co Ltd | Thin film semiconductor and its manufacture |
| JPH03109717A (en) * | 1989-09-23 | 1991-05-09 | Canon Inc | Forming of semiconductor thin film |
| US5620910A (en) * | 1994-06-23 | 1997-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device with a gate insulating film consisting of silicon oxynitride |
| JP2007288173A (en) * | 2006-03-20 | 2007-11-01 | Semiconductor Energy Lab Co Ltd | Crystalline semiconductor film, semiconductor device and manufacturing method of these |
| JP2008085317A (en) * | 2006-08-31 | 2008-04-10 | Semiconductor Energy Lab Co Ltd | Crystalline semiconductor film, and manufacturing method of semiconductor device |
| JP2008252076A (en) * | 2007-03-02 | 2008-10-16 | Semiconductor Energy Lab Co Ltd | Manufacturing method of semiconductor device |
| JP2008270780A (en) * | 2007-03-23 | 2008-11-06 | Semiconductor Energy Lab Co Ltd | Method of manufacturing crystalline semiconductor film, and method of manufacturing thin-film transistor |
| JP2008270779A (en) * | 2007-03-23 | 2008-11-06 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59132120A (en) * | 1983-01-18 | 1984-07-30 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS61179523A (en) * | 1985-02-05 | 1986-08-12 | Agency Of Ind Science & Technol | Formation of single crystal thin film |
-
1987
- 1987-05-29 JP JP13552387A patent/JPS63299322A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59132120A (en) * | 1983-01-18 | 1984-07-30 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS61179523A (en) * | 1985-02-05 | 1986-08-12 | Agency Of Ind Science & Technol | Formation of single crystal thin film |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02256227A (en) * | 1988-11-30 | 1990-10-17 | Ricoh Co Ltd | Thin film semiconductor and its manufacture |
| JPH03109717A (en) * | 1989-09-23 | 1991-05-09 | Canon Inc | Forming of semiconductor thin film |
| US5620910A (en) * | 1994-06-23 | 1997-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device with a gate insulating film consisting of silicon oxynitride |
| JP2007288173A (en) * | 2006-03-20 | 2007-11-01 | Semiconductor Energy Lab Co Ltd | Crystalline semiconductor film, semiconductor device and manufacturing method of these |
| JP2008085317A (en) * | 2006-08-31 | 2008-04-10 | Semiconductor Energy Lab Co Ltd | Crystalline semiconductor film, and manufacturing method of semiconductor device |
| JP2008252076A (en) * | 2007-03-02 | 2008-10-16 | Semiconductor Energy Lab Co Ltd | Manufacturing method of semiconductor device |
| JP2008270780A (en) * | 2007-03-23 | 2008-11-06 | Semiconductor Energy Lab Co Ltd | Method of manufacturing crystalline semiconductor film, and method of manufacturing thin-film transistor |
| JP2008270779A (en) * | 2007-03-23 | 2008-11-06 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device |
| US9177811B2 (en) | 2007-03-23 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US10032919B2 (en) | 2007-03-23 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US10541337B2 (en) | 2007-03-23 | 2020-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
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