JPS62104117A - Manufacture of semiconductor thin film - Google Patents

Manufacture of semiconductor thin film

Info

Publication number
JPS62104117A
JPS62104117A JP24289085A JP24289085A JPS62104117A JP S62104117 A JPS62104117 A JP S62104117A JP 24289085 A JP24289085 A JP 24289085A JP 24289085 A JP24289085 A JP 24289085A JP S62104117 A JPS62104117 A JP S62104117A
Authority
JP
Japan
Prior art keywords
scanning
laser beams
diameter
sec
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24289085A
Other versions
JPH0810668B2 (en
Inventor
Masaki Yuki
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP60242890A priority Critical patent/JPH0810668B2/en
Publication of JPS62104117A publication Critical patent/JPS62104117A/en
Publication of JPH0810668B2 publication Critical patent/JPH0810668B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Abstract

PURPOSE: To contrive the lowering of a process temperature by determining a scanning velocity at a beam spot diameter × 5,000/sec or above when an amorphous semiconductor thin film is irradiated with laser beams such as Cw Ar laser beams by scanning.
CONSTITUTION: On a substrate 4 made of soda-lime glass, a silicon oxide film 3 is deposited to 2,000Å at 350°C of substrate temperature by plasma CVD technique using SiH4 and N2O as material gases. Subsequently, an amorphous silicon film 2 is deposited to 3,000Å at the same substrate temperature 350°C by using SiH4 as a material gas. Next,this amorphous silicon film is irradiated with CW Ar laser beams 1 by scanning. The diameter of a beam spot is 100μm and the scanning velocity 1.2m/sec (beam spot diameter × 12,000/sec) and laser power 9W. The diameter of a crystal grain of the obtained polysilicon film 5 is 0.2W3.0μm and the amorphous silicon film which is dark red and almost opaque at that time becomes to show a light yellow color and an almost transparent state by the scanning irradiation with the laser beams.
COPYRIGHT: (C)1987,JPO&Japio
JP60242890A 1985-10-31 1985-10-31 Method of manufacturing a polycrystalline silicon film Expired - Fee Related JPH0810668B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60242890A JPH0810668B2 (en) 1985-10-31 1985-10-31 Method of manufacturing a polycrystalline silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60242890A JPH0810668B2 (en) 1985-10-31 1985-10-31 Method of manufacturing a polycrystalline silicon film

Publications (2)

Publication Number Publication Date
JPS62104117A true JPS62104117A (en) 1987-05-14
JPH0810668B2 JPH0810668B2 (en) 1996-01-31

Family

ID=17095748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60242890A Expired - Fee Related JPH0810668B2 (en) 1985-10-31 1985-10-31 Method of manufacturing a polycrystalline silicon film

Country Status (1)

Country Link
JP (1) JPH0810668B2 (en)

Cited By (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0480914A (en) * 1990-07-24 1992-03-13 Semiconductor Energy Lab Co Ltd Semiconductor manufacturing method
US5306651A (en) * 1990-05-11 1994-04-26 Asahi Glass Company Ltd. Process for preparing a polycrystalline semiconductor thin film transistor
JPH07326769A (en) * 1995-05-26 1995-12-12 Asahi Glass Co Ltd Plane display use thin film transistor
JPH0851218A (en) * 1995-06-23 1996-02-20 Asahi Glass Co Ltd Method of forming thin film transistor
US5612251A (en) * 1993-05-27 1997-03-18 Samsung Electronics Co., Ltd. Manufacturing method and device for a polycrystalline silicon
US5716857A (en) * 1990-07-24 1998-02-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US5861337A (en) * 1991-05-28 1999-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US6008078A (en) * 1990-07-24 1999-12-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6271066B1 (en) 1991-03-18 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US6329229B1 (en) 1993-11-05 2001-12-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device
US6391690B2 (en) 1995-12-14 2002-05-21 Seiko Epson Corporation Thin film semiconductor device and method for producing the same
US6429483B1 (en) 1994-06-09 2002-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6500704B1 (en) 1995-07-03 2002-12-31 Sanyo Electric Co., Ltd Semiconductor device, display device and method of fabricating the same
US6562672B2 (en) 1991-03-18 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US6576534B1 (en) 1991-09-21 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US6700096B2 (en) 2001-10-30 2004-03-02 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment
US6709905B2 (en) 1995-02-21 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6770546B2 (en) 2001-07-30 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US6808969B2 (en) 2001-10-30 2004-10-26 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and laser irradiation apparatus, and method for fabricating semiconductor device
US6841434B2 (en) 2002-03-26 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US6847050B2 (en) 2002-03-15 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device comprising the same
US6897889B2 (en) 2001-11-30 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Laser beam irradiating apparatus, laser beam irradiating method, and method of manufacturing a semiconductor device
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
US6930326B2 (en) 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
US6933527B2 (en) 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
US6962860B2 (en) 2001-11-09 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6984573B2 (en) 2002-06-14 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and apparatus
US7084052B2 (en) 1995-07-03 2006-08-01 Sanyo Electric Co., Ltd. Semiconductor device, display device and method of fabricating the same
US7097712B1 (en) 1992-12-04 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Apparatus for processing a semiconductor
US7105392B2 (en) 2002-01-28 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7105048B2 (en) 2001-11-30 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US7109069B2 (en) 2001-12-21 2006-09-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7112517B2 (en) 2001-09-10 2006-09-26 Semiconductor Energy Laboratory Co., Ltd. Laser treatment device, laser treatment method, and semiconductor device fabrication method
US7132375B2 (en) 2001-08-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device by crystallization of a semiconductor region by use of a continuous wave laser beam through the substrate
US7138306B2 (en) 2001-09-25 2006-11-21 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device
US7148092B2 (en) 2002-01-28 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7148507B2 (en) 2002-01-17 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having thin film transistor with position controlled channel formation region
US7226817B2 (en) 2001-12-28 2007-06-05 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing
US7312473B2 (en) 2001-12-28 2007-12-25 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device using the same
US7317205B2 (en) 2001-09-10 2008-01-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing a semiconductor device
JP2008034809A (en) * 2006-07-27 2008-02-14 Samsung Electronics Co Ltd Forming method for polysilicon pattern, diode including polysilicon pattern, multi-layer cross point resistive memory element including polysilicon pattern, and manufacturing method for diode and memory element
US7355202B2 (en) 1990-05-29 2008-04-08 Semiconductor Energy Co., Ltd. Thin-film transistor
US7393729B2 (en) 2001-08-17 2008-07-01 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating semiconductor device
US7468312B2 (en) 2001-11-09 2008-12-23 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
US7507615B2 (en) 1990-11-09 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
JP2009111206A (en) * 2007-10-31 2009-05-21 Fujifilm Corp Laser annealing method
US7705357B2 (en) 2002-03-05 2010-04-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel region in recess
US7709895B2 (en) 2002-02-08 2010-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having insulating stripe patterns
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6083321A (en) * 1983-10-14 1985-05-11 Hitachi Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6083321A (en) * 1983-10-14 1985-05-11 Hitachi Ltd Manufacture of semiconductor device

Cited By (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306651A (en) * 1990-05-11 1994-04-26 Asahi Glass Company Ltd. Process for preparing a polycrystalline semiconductor thin film transistor
US7355202B2 (en) 1990-05-29 2008-04-08 Semiconductor Energy Co., Ltd. Thin-film transistor
US7026200B2 (en) 1990-07-24 2006-04-11 Semiconductor Energy Laboratory Co. Ltd. Method for manufacturing a semiconductor device
US5716857A (en) * 1990-07-24 1998-02-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6486495B2 (en) 1990-07-24 2002-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US6008078A (en) * 1990-07-24 1999-12-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JPH0480914A (en) * 1990-07-24 1992-03-13 Semiconductor Energy Lab Co Ltd Semiconductor manufacturing method
US7507615B2 (en) 1990-11-09 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US6562672B2 (en) 1991-03-18 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US6271066B1 (en) 1991-03-18 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US6174374B1 (en) 1991-05-28 2001-01-16 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US6494162B1 (en) 1991-05-28 2002-12-17 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US6770143B2 (en) 1991-05-28 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US5861337A (en) * 1991-05-28 1999-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US7368367B2 (en) 1991-09-21 2008-05-06 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US6576534B1 (en) 1991-09-21 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US6924212B2 (en) 1991-09-21 2005-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
US7097712B1 (en) 1992-12-04 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Apparatus for processing a semiconductor
US5612251A (en) * 1993-05-27 1997-03-18 Samsung Electronics Co., Ltd. Manufacturing method and device for a polycrystalline silicon
US6329229B1 (en) 1993-11-05 2001-12-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
US6429483B1 (en) 1994-06-09 2002-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7547915B2 (en) 1994-06-09 2009-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having SiOxNy film
US8330165B2 (en) 1994-06-09 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6921686B2 (en) 1995-02-21 2005-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US6709905B2 (en) 1995-02-21 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US7615423B2 (en) 1995-02-21 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
US7045403B2 (en) 1995-02-21 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing insulated gate thin film semiconductor device
JPH07326769A (en) * 1995-05-26 1995-12-12 Asahi Glass Co Ltd Plane display use thin film transistor
JPH0851218A (en) * 1995-06-23 1996-02-20 Asahi Glass Co Ltd Method of forming thin film transistor
US6500704B1 (en) 1995-07-03 2002-12-31 Sanyo Electric Co., Ltd Semiconductor device, display device and method of fabricating the same
US7084052B2 (en) 1995-07-03 2006-08-01 Sanyo Electric Co., Ltd. Semiconductor device, display device and method of fabricating the same
US6391690B2 (en) 1995-12-14 2002-05-21 Seiko Epson Corporation Thin film semiconductor device and method for producing the same
US6660572B2 (en) 1995-12-14 2003-12-09 Seiko Epson Corporation Thin film semiconductor device and method for producing the same
US6770546B2 (en) 2001-07-30 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7218431B2 (en) 2001-07-30 2007-05-15 Semiconductor Energy Laboratory Co., Ltd. Laser treatment apparatus and method of manufacturing semiconductor device
US8035877B2 (en) 2001-07-30 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Laser treatment apparatus and method of manufacturing semiconductor device
US7679800B2 (en) 2001-07-30 2010-03-16 Semiconductor Energy Laboratory Co., Ltd. Laser treatment apparatus and method of manufacturing semiconductor device
US7393729B2 (en) 2001-08-17 2008-07-01 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating semiconductor device
US7422987B2 (en) 2001-08-30 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7132375B2 (en) 2001-08-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device by crystallization of a semiconductor region by use of a continuous wave laser beam through the substrate
US7682949B2 (en) 2001-09-10 2010-03-23 Semiconductor Energy Laboratory Co., Ltd. Laser treatment device, laser treatment method, and semiconductor device fabrication method
US7112517B2 (en) 2001-09-10 2006-09-26 Semiconductor Energy Laboratory Co., Ltd. Laser treatment device, laser treatment method, and semiconductor device fabrication method
US7317205B2 (en) 2001-09-10 2008-01-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing a semiconductor device
US7138306B2 (en) 2001-09-25 2006-11-21 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device
US9748099B2 (en) 2001-09-25 2017-08-29 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device
US7943885B2 (en) 2001-09-25 2011-05-17 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and method of manufacturing semiconductor device
US8686315B2 (en) 2001-09-25 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and laser irradiation device and method of manufacturing semiconductor device
US7037809B2 (en) 2001-10-30 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device using a laser irradiation process
US6808969B2 (en) 2001-10-30 2004-10-26 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and laser irradiation apparatus, and method for fabricating semiconductor device
US6700096B2 (en) 2001-10-30 2004-03-02 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment
US7300516B2 (en) 2001-10-30 2007-11-27 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and laser irradiation apparatus, and method for fabricating semiconductor device
US7892952B2 (en) 2001-10-30 2011-02-22 Semiconductor Energy Laboratory Co., Ltd. Laser apparatus, laser irradiation method, manufacturing method for semiconductor device, semiconductor device, production system for semiconductor device using the laser apparatus, and electronic equipment
US7468312B2 (en) 2001-11-09 2008-12-23 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
US6962860B2 (en) 2001-11-09 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US8696808B2 (en) 2001-11-27 2014-04-15 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US7105048B2 (en) 2001-11-30 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US6897889B2 (en) 2001-11-30 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Laser beam irradiating apparatus, laser beam irradiating method, and method of manufacturing a semiconductor device
US7445974B2 (en) 2001-11-30 2008-11-04 Semiconductor Energy Laboratory Co., Ltd. Laser beam irradiating apparatus, laser beam irradiating method, and method of manufacturing a semiconductor device
US7109069B2 (en) 2001-12-21 2006-09-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8093593B2 (en) 2001-12-21 2012-01-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having multichannel transistor
US7312473B2 (en) 2001-12-28 2007-12-25 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device using the same
US7226817B2 (en) 2001-12-28 2007-06-05 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing
US6933527B2 (en) 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
US7148507B2 (en) 2002-01-17 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having thin film transistor with position controlled channel formation region
US9899419B2 (en) 2002-01-17 2018-02-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
US7795734B2 (en) 2002-01-28 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7737506B2 (en) 2002-01-28 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7148092B2 (en) 2002-01-28 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7105392B2 (en) 2002-01-28 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7709895B2 (en) 2002-02-08 2010-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having insulating stripe patterns
US7705357B2 (en) 2002-03-05 2010-04-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel region in recess
US6847050B2 (en) 2002-03-15 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device comprising the same
US7704812B2 (en) 2002-03-26 2010-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
US7145175B2 (en) 2002-03-26 2006-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
US7547593B2 (en) 2002-03-26 2009-06-16 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US6930326B2 (en) 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
US6841434B2 (en) 2002-03-26 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US7179699B2 (en) 2002-03-26 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US6984573B2 (en) 2002-06-14 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and apparatus
US7560660B2 (en) 2002-06-14 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and apparatus
JP2008034809A (en) * 2006-07-27 2008-02-14 Samsung Electronics Co Ltd Forming method for polysilicon pattern, diode including polysilicon pattern, multi-layer cross point resistive memory element including polysilicon pattern, and manufacturing method for diode and memory element
JP2009111206A (en) * 2007-10-31 2009-05-21 Fujifilm Corp Laser annealing method

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