TW288166B - The method of forming BPSG film - Google Patents

The method of forming BPSG film

Info

Publication number
TW288166B
TW288166B TW085102003A TW85102003A TW288166B TW 288166 B TW288166 B TW 288166B TW 085102003 A TW085102003 A TW 085102003A TW 85102003 A TW85102003 A TW 85102003A TW 288166 B TW288166 B TW 288166B
Authority
TW
Taiwan
Prior art keywords
bpsg film
furnace
wafer
forming
cooling zone
Prior art date
Application number
TW085102003A
Other languages
Chinese (zh)
Inventor
Sik Yoo Kyong
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Application granted granted Critical
Publication of TW288166B publication Critical patent/TW288166B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/04—Joining glass to metal by means of an interlayer
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

A method of forming BPSG film includes following steps: - Deposit BPSG film on the surface of multi-deposed layer wafer; - Put the wafer into furnace; - Increase the inner temp. of furnace; - Planarize the BPSG film surface; - Quick cooling the inner temp. of furnace such that the surface of BPSG film becomes quick cooling zone, while the inner part becomes the slow cooling zone, and unload the wafer.
TW085102003A 1995-06-30 1996-02-16 The method of forming BPSG film TW288166B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950018554A KR0172039B1 (en) 1995-06-30 1995-06-30 Method of forming bpsg

Publications (1)

Publication Number Publication Date
TW288166B true TW288166B (en) 1996-10-11

Family

ID=19419019

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085102003A TW288166B (en) 1995-06-30 1996-02-16 The method of forming BPSG film

Country Status (6)

Country Link
JP (1) JPH0917781A (en)
KR (1) KR0172039B1 (en)
CN (1) CN1061635C (en)
DE (1) DE19605787B4 (en)
GB (1) GB2302870B (en)
TW (1) TW288166B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8026525B2 (en) * 2004-03-05 2011-09-27 Showa Denko K.K. Boron phosphide-based semiconductor light-emitting device
WO2006082468A1 (en) * 2005-02-03 2006-08-10 S.O.I.Tec Silicon On Insulator Technologies Method for high-temperature annealing a multilayer wafer
CN111540783B (en) * 2020-01-16 2023-09-26 重庆康佳光电科技有限公司 Metal-oxide semiconductor field effect transistor and preparation method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2538722B2 (en) * 1991-06-20 1996-10-02 株式会社半導体プロセス研究所 Method for manufacturing semiconductor device
KR940009599B1 (en) * 1991-10-30 1994-10-15 삼성전자 주식회사 Forming method of inter-dielectric film for semiconductor device
US5409858A (en) * 1993-08-06 1995-04-25 Micron Semiconductor, Inc. Method for optimizing thermal budgets in fabricating semiconductors

Also Published As

Publication number Publication date
JPH0917781A (en) 1997-01-17
GB2302870B (en) 1999-04-28
GB9603071D0 (en) 1996-04-10
DE19605787A1 (en) 1997-01-02
KR970003653A (en) 1997-01-28
DE19605787B4 (en) 2007-05-16
CN1145336A (en) 1997-03-19
CN1061635C (en) 2001-02-07
GB2302870A (en) 1997-02-05
KR0172039B1 (en) 1999-03-30

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