DE1923799A1 - Schaltungsanordnung bistabilem Verhalten - Google Patents

Schaltungsanordnung bistabilem Verhalten

Info

Publication number
DE1923799A1
DE1923799A1 DE19691923799 DE1923799A DE1923799A1 DE 1923799 A1 DE1923799 A1 DE 1923799A1 DE 19691923799 DE19691923799 DE 19691923799 DE 1923799 A DE1923799 A DE 1923799A DE 1923799 A1 DE1923799 A1 DE 1923799A1
Authority
DE
Germany
Prior art keywords
circuit arrangement
transistor
winding
switching
arrangement according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19691923799
Other languages
German (de)
English (en)
Other versions
DE1923799B2 (enrdf_load_stackoverflow
Inventor
Guenther Pexa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of DE1923799A1 publication Critical patent/DE1923799A1/de
Publication of DE1923799B2 publication Critical patent/DE1923799B2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/24Storing the actual state when the supply voltage fails
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/68Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors specially adapted for switching AC currents or voltages

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
DE19691923799 1968-07-15 1969-05-09 Schaltungsanordnung bistabilem Verhalten Withdrawn DE1923799A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1056768A CH493967A (de) 1968-07-15 1968-07-15 Schaltungsanordnung mit bistabilem Verhalten

Publications (2)

Publication Number Publication Date
DE1923799A1 true DE1923799A1 (de) 1970-02-05
DE1923799B2 DE1923799B2 (enrdf_load_stackoverflow) 1970-12-03

Family

ID=4364566

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691923799 Withdrawn DE1923799A1 (de) 1968-07-15 1969-05-09 Schaltungsanordnung bistabilem Verhalten

Country Status (5)

Country Link
CH (1) CH493967A (enrdf_load_stackoverflow)
DE (1) DE1923799A1 (enrdf_load_stackoverflow)
GB (1) GB1238449A (enrdf_load_stackoverflow)
NL (1) NL148209B (enrdf_load_stackoverflow)
NO (1) NO124900B (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
NO124900B (enrdf_load_stackoverflow) 1972-06-19
NL6910076A (enrdf_load_stackoverflow) 1970-01-19
GB1238449A (enrdf_load_stackoverflow) 1971-07-07
CH493967A (de) 1970-07-15
NL148209B (nl) 1975-12-15
DE1923799B2 (enrdf_load_stackoverflow) 1970-12-03

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Legal Events

Date Code Title Description
E77 Valid patent as to the heymanns-index 1977
EHJ Ceased/non-payment of the annual fee