DE1907637A1 - Verfahren zum Niederschlagen eines UEberzuges auf einen Gegenstand und Vorrichtung zur Durchfuehrung des Verfahrens - Google Patents
Verfahren zum Niederschlagen eines UEberzuges auf einen Gegenstand und Vorrichtung zur Durchfuehrung des VerfahrensInfo
- Publication number
- DE1907637A1 DE1907637A1 DE19691907637 DE1907637A DE1907637A1 DE 1907637 A1 DE1907637 A1 DE 1907637A1 DE 19691907637 DE19691907637 DE 19691907637 DE 1907637 A DE1907637 A DE 1907637A DE 1907637 A1 DE1907637 A1 DE 1907637A1
- Authority
- DE
- Germany
- Prior art keywords
- coating
- electrode
- base plate
- collecting electrode
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000576 coating method Methods 0.000 title claims description 55
- 239000011248 coating agent Substances 0.000 title claims description 51
- 238000000034 method Methods 0.000 title claims description 41
- 238000000151 deposition Methods 0.000 title description 8
- 239000000463 material Substances 0.000 claims description 39
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000007779 soft material Substances 0.000 claims description 14
- 238000005507 spraying Methods 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000005299 abrasion Methods 0.000 claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000033228 biological regulation Effects 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 238000000889 atomisation Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims description 2
- 239000004519 grease Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 239000010406 cathode material Substances 0.000 claims 1
- 238000003197 gene knockdown Methods 0.000 claims 1
- 230000006698 induction Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 19
- 239000010410 layer Substances 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 239000007921 spray Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 239000011368 organic material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000002826 coolant Substances 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229920002799 BoPET Polymers 0.000 description 4
- 239000005041 Mylar™ Substances 0.000 description 4
- RHZUVFJBSILHOK-UHFFFAOYSA-N anthracen-1-ylmethanolate Chemical compound C1=CC=C2C=C3C(C[O-])=CC=CC3=CC2=C1 RHZUVFJBSILHOK-UHFFFAOYSA-N 0.000 description 4
- 239000003830 anthracite Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- -1 zinc sulfide Chemical compound 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 230000036316 preload Effects 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Chemical compound O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 230000008685 targeting Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 240000000581 Triticum monococcum Species 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 229920006397 acrylic thermoplastic Polymers 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000006249 magnetic particle Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/153—Charge-receiving layers combined with additional photo- or thermo-sensitive, but not photoconductive, layers, e.g. silver-salt layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US71565768A | 1968-03-25 | 1968-03-25 | |
US71578068A | 1968-03-25 | 1968-03-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1907637A1 true DE1907637A1 (de) | 1971-01-21 |
Family
ID=27109392
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19691907637 Pending DE1907637A1 (de) | 1968-03-25 | 1969-02-15 | Verfahren zum Niederschlagen eines UEberzuges auf einen Gegenstand und Vorrichtung zur Durchfuehrung des Verfahrens |
DE19691912917 Withdrawn DE1912917B2 (de) | 1968-03-25 | 1969-03-14 | Elektrophotographisches aufzeichnungsmaterial und verfahren zu seiner herstellung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19691912917 Withdrawn DE1912917B2 (de) | 1968-03-25 | 1969-03-14 | Elektrophotographisches aufzeichnungsmaterial und verfahren zu seiner herstellung |
Country Status (9)
Country | Link |
---|---|
US (1) | US3650737A (en)) |
AT (1) | AT297436B (en)) |
BE (2) | BE727123A (en)) |
CA (1) | CA920860A (en)) |
CH (2) | CH481464A (en)) |
DE (2) | DE1907637A1 (en)) |
FR (2) | FR1602786A (en)) |
GB (2) | GB1258192A (en)) |
NL (1) | NL6904536A (en)) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3879199A (en) * | 1971-12-03 | 1975-04-22 | Xerox Corp | Surface treatment of arsenic-selenium photoconductors |
US3886025A (en) * | 1972-08-24 | 1975-05-27 | Ibm | Ferrite head |
US4013539A (en) * | 1973-01-12 | 1977-03-22 | Coulter Information Systems, Inc. | Thin film deposition apparatus |
US3901783A (en) * | 1973-02-09 | 1975-08-26 | Int Standard Electric Corp | Method of producing selenium charge electrophotographic recording plates |
US3893854A (en) * | 1973-03-30 | 1975-07-08 | Xerox Corp | Photographic articles with gaps for processing fluids |
US3901784A (en) * | 1973-11-15 | 1975-08-26 | United Aircraft Corp | Cylindrical rf sputtering apparatus |
JPS5098331A (en)) * | 1973-12-25 | 1975-08-05 | ||
US4080281A (en) * | 1976-04-09 | 1978-03-21 | Tsunehiko Endo | Apparatus for making metal films |
US4098956A (en) * | 1976-08-11 | 1978-07-04 | The United States Of America As Represented By The Secretary Of The Interior | Spectrally selective solar absorbers |
US4137142A (en) * | 1977-12-27 | 1979-01-30 | Stork Brabant B.V. | Method and apparatus for sputtering photoconductive coating on endless flexible belts or cylinders |
US4151064A (en) * | 1977-12-27 | 1979-04-24 | Coulter Stork U.S.A., Inc. | Apparatus for sputtering cylinders |
DE2954551C2 (en)) * | 1978-03-03 | 1989-02-09 | Canon K.K., Tokio/Tokyo, Jp | |
JPS54145537A (en) * | 1978-05-04 | 1979-11-13 | Canon Inc | Preparation of electrophotographic image forming material |
GB2069008B (en) * | 1980-01-16 | 1984-09-12 | Secr Defence | Coating in a glow discharge |
JPS5713777A (en) | 1980-06-30 | 1982-01-23 | Shunpei Yamazaki | Semiconductor device and manufacture thereof |
JPS5711351A (en) * | 1980-06-25 | 1982-01-21 | Shunpei Yamazaki | Electrostatic copying machine |
US5143808A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US4889783A (en) * | 1980-06-25 | 1989-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US5545503A (en) * | 1980-06-25 | 1996-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of making printing member for electrostatic photocopying |
US5103262A (en) * | 1980-06-25 | 1992-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US5070364A (en) * | 1980-06-25 | 1991-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US5144367A (en) * | 1980-06-25 | 1992-09-01 | Semiconductor Energy Laboratory Co., Ltd. | Printing member for electrostatic photocopying |
US5859443A (en) * | 1980-06-30 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US5262350A (en) * | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
US6900463B1 (en) | 1980-06-30 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US4394425A (en) * | 1980-09-12 | 1983-07-19 | Canon Kabushiki Kaisha | Photoconductive member with α-Si(C) barrier layer |
US4394426A (en) * | 1980-09-25 | 1983-07-19 | Canon Kabushiki Kaisha | Photoconductive member with α-Si(N) barrier layer |
DE3200376A1 (de) * | 1981-01-09 | 1982-11-04 | Canon K.K., Tokyo | Fotoleitfaehiges element |
US4423131A (en) * | 1982-05-03 | 1983-12-27 | Xerox Corporation | Photoresponsive devices containing polyvinylsilicate coatings |
US5219698A (en) * | 1982-09-27 | 1993-06-15 | Canon Kabushiki Kaisha | Laser imaging method and apparatus for electrophotography |
JPS5957247A (ja) * | 1982-09-27 | 1984-04-02 | Canon Inc | 電子写真用感光体 |
CH663455A5 (de) * | 1984-04-19 | 1987-12-15 | Balzers Hochvakuum | Rohr mit einer innenbeschichtung. |
US4588667A (en) * | 1984-05-15 | 1986-05-13 | Xerox Corporation | Electrophotographic imaging member and process comprising sputtering titanium on substrate |
USH557H (en) * | 1986-11-07 | 1988-12-06 | The United States Of America As Represented By The Department Of Energy | Epitaxial strengthening of crystals |
JPH01188862A (ja) * | 1988-01-25 | 1989-07-28 | Minolta Camera Co Ltd | 電子写真用感光体 |
US5188876A (en) * | 1990-04-12 | 1993-02-23 | Armstrong World Industries, Inc. | Surface covering with inorganic wear layer |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2886434A (en) * | 1955-06-06 | 1959-05-12 | Horizons Inc | Protected photoconductive element and method of making same |
US2860048A (en) * | 1955-06-13 | 1958-11-11 | Haloid Xerox Inc | Xerographic plate |
US2879360A (en) * | 1956-10-01 | 1959-03-24 | Lane Wells Co | Photoconductive device having a silicon dioxide protective layer and method of making same |
US2993806A (en) * | 1956-12-17 | 1961-07-25 | Gen Tire & Rubber Co | Metal coating of plastics |
US3251686A (en) * | 1960-07-01 | 1966-05-17 | Xerox Corp | Xerographic process |
BE631700A (en)) * | 1962-04-30 | |||
US3149761A (en) * | 1962-09-18 | 1964-09-22 | Johnson & Son Inc S C | Valve actuating assembly for pressurized containers |
US3397982A (en) * | 1964-12-21 | 1968-08-20 | Xerox Corp | Xerographic plate with an inorganic glass binder having an overcoating consisting essentially of aluminum oxide |
US3397086A (en) * | 1965-03-12 | 1968-08-13 | Gen Electric | Photoconductive composition and coated article |
US3287243A (en) * | 1965-03-29 | 1966-11-22 | Bell Telephone Labor Inc | Deposition of insulating films by cathode sputtering in an rf-supported discharge |
US3484237A (en) * | 1966-06-13 | 1969-12-16 | Ibm | Organic photoconductive compositions and their use in electrophotographic processes |
-
1968
- 1968-03-25 US US715657A patent/US3650737A/en not_active Expired - Lifetime
- 1968-12-30 FR FR1602786D patent/FR1602786A/fr not_active Expired
- 1968-12-30 FR FR1604499D patent/FR1604499A/fr not_active Expired
-
1969
- 1969-01-20 BE BE727123D patent/BE727123A/xx unknown
- 1969-02-10 BE BE728199D patent/BE728199A/xx unknown
- 1969-02-15 DE DE19691907637 patent/DE1907637A1/de active Pending
- 1969-02-17 AT AT159369A patent/AT297436B/de not_active IP Right Cessation
- 1969-03-05 GB GB1258192D patent/GB1258192A/en not_active Expired
- 1969-03-05 GB GB1251723D patent/GB1251723A/en not_active Expired
- 1969-03-13 CH CH370569A patent/CH481464A/de not_active IP Right Cessation
- 1969-03-14 DE DE19691912917 patent/DE1912917B2/de not_active Withdrawn
- 1969-03-19 CH CH411469A patent/CH483078A/de not_active IP Right Cessation
- 1969-03-22 CA CA046494A patent/CA920860A/en not_active Expired
- 1969-03-24 NL NL6904536A patent/NL6904536A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
US3650737A (en) | 1972-03-21 |
DE1912917A1 (de) | 1969-10-16 |
AT297436B (de) | 1972-03-27 |
GB1251723A (en)) | 1971-10-27 |
CH483078A (de) | 1969-12-15 |
BE727123A (en)) | 1969-07-01 |
BE728199A (en)) | 1969-07-16 |
NL6904536A (en)) | 1969-09-29 |
FR1602786A (en)) | 1971-01-25 |
GB1258192A (en)) | 1971-12-22 |
CH481464A (de) | 1969-11-15 |
DE1912917B2 (de) | 1971-06-24 |
FR1604499A (en)) | 1971-11-08 |
CA920860A (en) | 1973-02-13 |
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