DE1901819C3 - Herstellungsverfahren für polykristalline Siliciumschichten - Google Patents

Herstellungsverfahren für polykristalline Siliciumschichten

Info

Publication number
DE1901819C3
DE1901819C3 DE1901819A DE1901819A DE1901819C3 DE 1901819 C3 DE1901819 C3 DE 1901819C3 DE 1901819 A DE1901819 A DE 1901819A DE 1901819 A DE1901819 A DE 1901819A DE 1901819 C3 DE1901819 C3 DE 1901819C3
Authority
DE
Germany
Prior art keywords
layer
gas
polycrystalline silicon
polycrystalline
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1901819A
Other languages
German (de)
English (en)
Other versions
DE1901819A1 (de
DE1901819B2 (de
Inventor
David William Beacon Boss
Ven Young Poughkeepsie Doo
William Norman Hopewell Junction Patterson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE1901819A1 publication Critical patent/DE1901819A1/de
Publication of DE1901819B2 publication Critical patent/DE1901819B2/de
Application granted granted Critical
Publication of DE1901819C3 publication Critical patent/DE1901819C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
  • Photovoltaic Devices (AREA)
DE1901819A 1968-01-15 1969-01-15 Herstellungsverfahren für polykristalline Siliciumschichten Expired DE1901819C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69791168A 1968-01-15 1968-01-15

Publications (3)

Publication Number Publication Date
DE1901819A1 DE1901819A1 (de) 1969-09-11
DE1901819B2 DE1901819B2 (de) 1979-11-08
DE1901819C3 true DE1901819C3 (de) 1980-07-24

Family

ID=24803096

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1901819A Expired DE1901819C3 (de) 1968-01-15 1969-01-15 Herstellungsverfahren für polykristalline Siliciumschichten

Country Status (5)

Country Link
US (1) US3558374A (OSRAM)
JP (2) JPS4822376B1 (OSRAM)
DE (1) DE1901819C3 (OSRAM)
FR (1) FR1603847A (OSRAM)
GB (1) GB1253294A (OSRAM)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3894893A (en) * 1968-03-30 1975-07-15 Kyodo Denshi Gijyutsu Kk Method for the production of monocrystal-polycrystal semiconductor devices
JPS503780A (OSRAM) * 1973-05-15 1975-01-16
US3874920A (en) * 1973-06-28 1975-04-01 Ibm Boron silicide method for making thermally oxidized boron doped poly-crystalline silicon having minimum resistivity
DE2449688C3 (de) * 1974-10-18 1980-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper
JPS51126587U (OSRAM) * 1975-04-09 1976-10-13
DE2536174C3 (de) * 1975-08-13 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von polykristallinen Siliciumschichten für Halbleiterbauelemente
US4157418A (en) * 1978-02-08 1979-06-05 Minnesota Mining And Manufacturing Company Acrylic functional aminocarboxylic acids and derivatives as components of pressure sensitive adhesives
US4358326A (en) * 1980-11-03 1982-11-09 International Business Machines Corporation Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing
US4467519A (en) * 1982-04-01 1984-08-28 International Business Machines Corporation Process for fabricating polycrystalline silicon film resistors
DE3725358A1 (de) * 1987-07-30 1989-02-09 Telog Systems Gmbh Vorrichtung und verfahren zur oberflaechenbehandlung von materialien
US5164338A (en) * 1988-04-28 1992-11-17 U.S. Philips Corporation Method of manufacturing a polycrystalline semiconductor resistance layer of silicon on a silicon body and silicon pressure sensor having such a resistance layer
US4975469A (en) * 1989-03-20 1990-12-04 Amoco Corporation Oriented porous polypropylene films
US5176953A (en) * 1990-12-21 1993-01-05 Amoco Corporation Oriented polymeric microporous films
US6690103B1 (en) 1999-07-21 2004-02-10 Alan K. Uke Incandescent light bulb with variable pitch coiled filament

Also Published As

Publication number Publication date
FR1603847A (OSRAM) 1971-06-07
US3558374A (en) 1971-01-26
DE1901819A1 (de) 1969-09-11
DE1901819B2 (de) 1979-11-08
JPS5322422B1 (OSRAM) 1978-07-08
JPS4822376B1 (OSRAM) 1973-07-05
GB1253294A (en) 1971-11-10

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee