DE1811277C3 - Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einer n-Silicium-Schicht - Google Patents

Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einer n-Silicium-Schicht

Info

Publication number
DE1811277C3
DE1811277C3 DE1811277A DE1811277A DE1811277C3 DE 1811277 C3 DE1811277 C3 DE 1811277C3 DE 1811277 A DE1811277 A DE 1811277A DE 1811277 A DE1811277 A DE 1811277A DE 1811277 C3 DE1811277 C3 DE 1811277C3
Authority
DE
Germany
Prior art keywords
layer
boron oxide
silicon layer
glass layer
doped zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1811277A
Other languages
German (de)
English (en)
Other versions
DE1811277B2 (de
DE1811277A1 (de
Inventor
Wolfgang Dipl.-Phys. Dr. 8011 Vaterstetten Mueller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE1811277A priority Critical patent/DE1811277C3/de
Priority to NL6914784A priority patent/NL6914784A/xx
Priority to AT1099969A priority patent/AT320030B/de
Priority to JP44094361A priority patent/JPS4826662B1/ja
Priority to FR6940726A priority patent/FR2024352B1/fr
Priority to CH1762069A priority patent/CH508275A/de
Priority to GB1232727D priority patent/GB1232727A/en
Priority to SE16362/69A priority patent/SE344385B/xx
Publication of DE1811277A1 publication Critical patent/DE1811277A1/de
Publication of DE1811277B2 publication Critical patent/DE1811277B2/de
Application granted granted Critical
Publication of DE1811277C3 publication Critical patent/DE1811277C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Formation Of Insulating Films (AREA)
DE1811277A 1968-11-27 1968-11-27 Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einer n-Silicium-Schicht Expired DE1811277C3 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE1811277A DE1811277C3 (de) 1968-11-27 1968-11-27 Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einer n-Silicium-Schicht
NL6914784A NL6914784A (https=) 1968-11-27 1969-09-30
AT1099969A AT320030B (de) 1968-11-27 1969-11-25 Verfahren zum Herstellen von Feldeffekttransistoren mit p-dotierten Zonen mit unterschiedlichen Eindringtiefen in Silizium
FR6940726A FR2024352B1 (https=) 1968-11-27 1969-11-26
JP44094361A JPS4826662B1 (https=) 1968-11-27 1969-11-26
CH1762069A CH508275A (de) 1968-11-27 1969-11-26 Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einem Siliciumhalbleiterkörper
GB1232727D GB1232727A (https=) 1968-11-27 1969-11-26
SE16362/69A SE344385B (https=) 1968-11-27 1969-11-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1811277A DE1811277C3 (de) 1968-11-27 1968-11-27 Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einer n-Silicium-Schicht

Publications (3)

Publication Number Publication Date
DE1811277A1 DE1811277A1 (de) 1970-06-18
DE1811277B2 DE1811277B2 (de) 1977-09-08
DE1811277C3 true DE1811277C3 (de) 1978-06-08

Family

ID=5714504

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1811277A Expired DE1811277C3 (de) 1968-11-27 1968-11-27 Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einer n-Silicium-Schicht

Country Status (8)

Country Link
JP (1) JPS4826662B1 (https=)
AT (1) AT320030B (https=)
CH (1) CH508275A (https=)
DE (1) DE1811277C3 (https=)
FR (1) FR2024352B1 (https=)
GB (1) GB1232727A (https=)
NL (1) NL6914784A (https=)
SE (1) SE344385B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2092730A1 (en) * 1970-06-12 1972-01-28 Radiotechnique Compelec Boron diffusion in silicon - from diborane, oxygen nitrogen mixtures
JPS51127564U (https=) * 1975-04-09 1976-10-15
US4099997A (en) * 1976-06-21 1978-07-11 Rca Corporation Method of fabricating a semiconductor device
NL8006668A (nl) * 1980-12-09 1982-07-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
DE102009041546A1 (de) * 2009-03-27 2010-10-14 Bosch Solar Energy Ag Verfahren zur Herstellung von Solarzellen mit selektivem Emitter

Also Published As

Publication number Publication date
DE1811277B2 (de) 1977-09-08
JPS4826662B1 (https=) 1973-08-14
FR2024352B1 (https=) 1974-05-03
AT320030B (de) 1975-01-27
GB1232727A (https=) 1971-05-19
DE1811277A1 (de) 1970-06-18
NL6914784A (https=) 1970-05-29
SE344385B (https=) 1972-04-10
FR2024352A1 (https=) 1970-08-28
CH508275A (de) 1971-05-31

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee