DE1769860A1 - Vorrichtung zum Ziehen von versetzungsfreien Halbleitereinkristallstaeben - Google Patents
Vorrichtung zum Ziehen von versetzungsfreien HalbleitereinkristallstaebenInfo
- Publication number
- DE1769860A1 DE1769860A1 DE19681769860 DE1769860A DE1769860A1 DE 1769860 A1 DE1769860 A1 DE 1769860A1 DE 19681769860 DE19681769860 DE 19681769860 DE 1769860 A DE1769860 A DE 1769860A DE 1769860 A1 DE1769860 A1 DE 1769860A1
- Authority
- DE
- Germany
- Prior art keywords
- crucible
- crystal
- radiation
- diameter
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 title description 7
- 230000005855 radiation Effects 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 241000446313 Lamella Species 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/32—Seed holders, e.g. chucks
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681769860 DE1769860A1 (de) | 1968-07-26 | 1968-07-26 | Vorrichtung zum Ziehen von versetzungsfreien Halbleitereinkristallstaeben |
| DK402869A DK123696B (da) | 1968-07-26 | 1969-07-24 | Apparat til trækning af fejlstedfrie halvlederenkeltkrystalstave. |
| GB3725569A GB1222465A (en) | 1968-07-26 | 1969-07-24 | Improvements in or relating to apparatus for the drawing of monocrystalline semiconductor rods |
| FR6925536A FR2013820A1 (enrdf_load_stackoverflow) | 1968-07-26 | 1969-07-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681769860 DE1769860A1 (de) | 1968-07-26 | 1968-07-26 | Vorrichtung zum Ziehen von versetzungsfreien Halbleitereinkristallstaeben |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1769860A1 true DE1769860A1 (de) | 1971-11-11 |
Family
ID=5700303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19681769860 Pending DE1769860A1 (de) | 1968-07-26 | 1968-07-26 | Vorrichtung zum Ziehen von versetzungsfreien Halbleitereinkristallstaeben |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1769860A1 (enrdf_load_stackoverflow) |
| DK (1) | DK123696B (enrdf_load_stackoverflow) |
| FR (1) | FR2013820A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1222465A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3530231A1 (de) * | 1984-08-24 | 1986-02-27 | Sony Corp., Tokio/Tokyo | Vorrichtung zum ziehen von einkristallen |
| DE3743880A1 (de) * | 1986-12-26 | 1988-07-14 | Toshiba Ceramics Co | Siliziumeinkristall-hochziehvorrichtung |
| US5207992A (en) * | 1986-12-26 | 1993-05-04 | Toshiba Ceramics Co., Ltd. | Silicon single crystal pulling-up apparatus |
| DE19754961A1 (de) * | 1997-12-11 | 1999-06-17 | Leybold Systems Gmbh | Vorrichtung zum Halten eines Kristallblockes |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4116642A (en) * | 1976-12-15 | 1978-09-26 | Western Electric Company, Inc. | Method and apparatus for avoiding undesirable deposits in crystal growing operations |
| US4190630A (en) * | 1978-01-03 | 1980-02-26 | Vsesojuzny Nauchno-Isslekovatelsky Institut Monokristallov Stsintillyatsionnykh Materialov I Osobo Chistykh Khimicheskikh Veschestv | Apparatus for pulling single crystals from melt |
| DE3005492C2 (de) * | 1980-02-14 | 1983-10-27 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung reinster Einkristalle durch Tiegelziehen nach Czochralski |
| US4390505A (en) * | 1981-03-30 | 1983-06-28 | Mobil Solar Energy Corporation | Crystal growth apparatus |
| US4450333A (en) * | 1982-05-28 | 1984-05-22 | At&T Technologies, Inc. | Zirconia induction furnace |
| US4608473A (en) * | 1982-05-28 | 1986-08-26 | At&T Technologies, Inc. | Modified zirconia induction furnace |
| US4594127A (en) * | 1984-09-17 | 1986-06-10 | General Signal Corporation | Method and apparatus for growing crystals |
| US5180562A (en) * | 1987-10-03 | 1993-01-19 | Leybold Aktiengesellschaft | Apparatus for pulling monocrystals |
| US6457434B1 (en) * | 2001-02-22 | 2002-10-01 | Rosita de Keersmaeker | Wet/dry tissue dispenser |
| US8263914B2 (en) | 2008-08-27 | 2012-09-11 | AMG IdealCast Corporation | Cartridge heater and method of use |
| CN118745592B (zh) * | 2024-06-25 | 2025-04-15 | 青岛华芯晶电科技有限公司 | 一种传动旋转移动式晶体生长高压炉 |
-
1968
- 1968-07-26 DE DE19681769860 patent/DE1769860A1/de active Pending
-
1969
- 1969-07-24 GB GB3725569A patent/GB1222465A/en not_active Expired
- 1969-07-24 DK DK402869A patent/DK123696B/da unknown
- 1969-07-25 FR FR6925536A patent/FR2013820A1/fr not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3530231A1 (de) * | 1984-08-24 | 1986-02-27 | Sony Corp., Tokio/Tokyo | Vorrichtung zum ziehen von einkristallen |
| DE3743880A1 (de) * | 1986-12-26 | 1988-07-14 | Toshiba Ceramics Co | Siliziumeinkristall-hochziehvorrichtung |
| US5207992A (en) * | 1986-12-26 | 1993-05-04 | Toshiba Ceramics Co., Ltd. | Silicon single crystal pulling-up apparatus |
| DE19754961A1 (de) * | 1997-12-11 | 1999-06-17 | Leybold Systems Gmbh | Vorrichtung zum Halten eines Kristallblockes |
| EP0947612A3 (de) * | 1997-12-11 | 2000-07-12 | Leybold Systems GmbH | Vorrichtung zum Halten eines Kristallblockes |
| US6126746A (en) * | 1997-12-11 | 2000-10-03 | Leybold Systems Gmbh | Device for holding a crystal block |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1222465A (en) | 1971-02-17 |
| FR2013820A1 (enrdf_load_stackoverflow) | 1970-04-10 |
| DK123696B (da) | 1972-07-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1769860A1 (de) | Vorrichtung zum Ziehen von versetzungsfreien Halbleitereinkristallstaeben | |
| DE69802707T2 (de) | Hitzeschild für eine kristallziehungsvorrichtung | |
| DE69204198T2 (de) | Czochralsky-Verfahren unter Verwendung eines Bauelementes zum Abschirmen der Strahlung der Rohmaterial-Schmelzlösung und Vorrichtung hierfür. | |
| DE19622659C2 (de) | Vertikalofen zur Züchtung von Einkristallen | |
| DE2242111B2 (de) | Vorrichtung und Verfahren zum Herstellen von Gußstücken mit gerichtet erstarrtem Gefüge | |
| DE112006002595B4 (de) | Herstellungsvorrichtung und Herstellungsverfahren für einen Einkristall-Halbleiter | |
| DE112014002768B4 (de) | Einkristall-Herstellvorrichtung und Verfahren zum Herstellen eines Einkristalls | |
| DE1254131B (de) | Verfahren zur Regelung der Dicke flacher, dendritischer Kristalle aus Silicium, Germanium oder Halbleiterverbindungen beim kontinuierlichen Ziehen aus einer Schmelze | |
| DE1619966C3 (de) | Vorrichtung zum Ziehen von Siliciumeinkristallen | |
| DE69403275T2 (de) | Verfahren und Vorrichtung zur Herstellung eines Silizium-Einkristalles | |
| DE112009001431B4 (de) | Einkristall-Herstellungsvorrichtung und Einkristall-Herstellungsverfahren | |
| DE10392918T5 (de) | Verfahren zur Herstellung eines Einkristallhalbleiters und Vorrichtung zur Herstellung eines Einkristallhalbleiters | |
| DE3322685A1 (de) | Verfahren zur herstellung eines bandes aus polykristallinem silizium | |
| DE3530231C2 (enrdf_load_stackoverflow) | ||
| DE1458155A1 (de) | Vorrichtung zum kontinuierlichen Strangziehen von vielkristallinem Material | |
| DE102020127336B4 (de) | Halbleiterkristallwachstumsvorrichtung | |
| DE3210833A1 (de) | Verfahren und vorrichtung zum ziehen eines bandfoermigen kristallkoerpers aus einer schmelze | |
| DE1519837B2 (de) | Verfahren zum zonenschmelzen oder kristallziehen | |
| DE1941968C3 (de) | Verfahren und Vorrichtung zur Herstellung von Einkristallen | |
| DE1444530A1 (de) | Verfahren zum Herstellen von einkristallinen Halbleiterstaeben | |
| EP0926270B1 (de) | Verfahren und Vorrichtung zur Herstellung eines Einkristalls | |
| DE112017003224T5 (de) | Verfahren zur Herstellung von Silicium-Einkristall | |
| DE2755006B2 (de) | Vorrichtung zum Kristallziehen aus der Schmelze | |
| DE1519881B2 (de) | Verfahren und vorrichtung zum herstellen eines stabfoermigen halbleiterkristalls mit konstantem durchmesser | |
| DE2358300B2 (de) | Vorrichtung zum senkrechten halten eines halbleiterkristallstabes beim tiegelfreien zonenschmelzen |