DE1764180B2 - Verfahren zum einstellen der ladungstraeger lebensdauer in einer oertlich begrenzten zone eines halbleiterkoerpers - Google Patents
Verfahren zum einstellen der ladungstraeger lebensdauer in einer oertlich begrenzten zone eines halbleiterkoerpersInfo
- Publication number
- DE1764180B2 DE1764180B2 DE19681764180 DE1764180A DE1764180B2 DE 1764180 B2 DE1764180 B2 DE 1764180B2 DE 19681764180 DE19681764180 DE 19681764180 DE 1764180 A DE1764180 A DE 1764180A DE 1764180 B2 DE1764180 B2 DE 1764180B2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor body
- zone
- gold
- metallic
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 51
- 239000002800 charge carrier Substances 0.000 title claims description 23
- 238000000034 method Methods 0.000 title claims description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 35
- 229910052737 gold Inorganic materials 0.000 claims description 34
- 239000010931 gold Substances 0.000 claims description 34
- 238000009792 diffusion process Methods 0.000 claims description 30
- 239000002019 doping agent Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 18
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- 239000011574 phosphorus Substances 0.000 claims description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052787 antimony Inorganic materials 0.000 claims description 8
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052785 arsenic Inorganic materials 0.000 claims description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims description 4
- 238000010790 dilution Methods 0.000 claims description 3
- 239000012895 dilution Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000011253 protective coating Substances 0.000 claims description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 239000000969 carrier Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000005215 recombination Methods 0.000 claims 1
- 230000006798 recombination Effects 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241000416536 Euproctis pseudoconspersa Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000003973 irrigation Methods 0.000 description 1
- 230000002262 irrigation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- -1 phosphorus compound Chemical class 0.000 description 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/904—Charge carrier lifetime control
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63383467A | 1967-04-26 | 1967-04-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1764180A1 DE1764180A1 (de) | 1971-04-15 |
| DE1764180B2 true DE1764180B2 (de) | 1972-02-10 |
Family
ID=24541308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19681764180 Pending DE1764180B2 (de) | 1967-04-26 | 1968-04-19 | Verfahren zum einstellen der ladungstraeger lebensdauer in einer oertlich begrenzten zone eines halbleiterkoerpers |
Country Status (5)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2802727A1 (de) * | 1977-01-24 | 1978-08-03 | Hitachi Ltd | Zum aushalten von hochspannung geeignetes halbleiterbauelement |
| DE3037316A1 (de) * | 1979-10-03 | 1981-04-23 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Verfahren zur herstellung von leistungs-schaltvorrichtungen |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3645808A (en) * | 1967-07-31 | 1972-02-29 | Hitachi Ltd | Method for fabricating a semiconductor-integrated circuit |
| US3946425A (en) * | 1969-03-12 | 1976-03-23 | Hitachi, Ltd. | Multi-emitter transistor having heavily doped N+ regions surrounding base region of transistors |
| US3640783A (en) * | 1969-08-11 | 1972-02-08 | Trw Semiconductors Inc | Semiconductor devices with diffused platinum |
| JPS4826659B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1969-11-15 | 1973-08-14 | ||
| US3860947A (en) * | 1970-03-19 | 1975-01-14 | Hiroshi Gamo | Thyristor with gold doping profile |
| US3727116A (en) * | 1970-05-05 | 1973-04-10 | Rca Corp | Integral thyristor-rectifier device |
| US3662232A (en) * | 1970-12-10 | 1972-05-09 | Fmc Corp | Semiconductor devices having low minority carrier lifetime and process for producing same |
| US3838440A (en) * | 1972-10-06 | 1974-09-24 | Fairchild Camera Instr Co | A monolithic mos/bipolar integrated circuit structure |
| US4140560A (en) * | 1977-06-20 | 1979-02-20 | International Rectifier Corporation | Process for manufacture of fast recovery diodes |
| IT1245365B (it) * | 1991-03-28 | 1994-09-20 | Cons Ric Microelettronica | Struttura integrata di dispositivo bipolare di potenza ad elevata densita' di corrente e diodo veloce e relativo processo di fabbricazione |
| DE10324100B4 (de) * | 2003-05-27 | 2008-09-25 | Infineon Technologies Ag | Verfahren zur Herstellung eines robusten Halbleiterbauelements |
| DE102007020039B4 (de) * | 2007-04-27 | 2011-07-14 | Infineon Technologies Austria Ag | Verfahren zur Herstellung einer vertikal inhomogenen Platin- oder Goldverteilung in einem Halbleitersubstrat und in einem Halbleiterbauelement, derart hergestelltes Halbleitersubstrat und Halbleiterbauelement |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3440113A (en) * | 1966-09-19 | 1969-04-22 | Westinghouse Electric Corp | Process for diffusing gold into semiconductor material |
| US3440114A (en) * | 1966-10-31 | 1969-04-22 | Texas Instruments Inc | Selective gold doping for high resistivity regions in silicon |
-
1967
- 1967-04-26 US US633834A patent/US3486950A/en not_active Expired - Lifetime
-
1968
- 1968-04-09 GB GB17068/68A patent/GB1160058A/en not_active Expired
- 1968-04-19 DE DE19681764180 patent/DE1764180B2/de active Pending
- 1968-04-24 FR FR1570017D patent/FR1570017A/fr not_active Expired
- 1968-04-25 BE BE714227D patent/BE714227A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2802727A1 (de) * | 1977-01-24 | 1978-08-03 | Hitachi Ltd | Zum aushalten von hochspannung geeignetes halbleiterbauelement |
| DE3037316A1 (de) * | 1979-10-03 | 1981-04-23 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Verfahren zur herstellung von leistungs-schaltvorrichtungen |
Also Published As
| Publication number | Publication date |
|---|---|
| US3486950A (en) | 1969-12-30 |
| GB1160058A (en) | 1969-07-30 |
| DE1764180A1 (de) | 1971-04-15 |
| FR1570017A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1969-06-06 |
| BE714227A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1968-10-25 |
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