DE1696489B2 - Verfahren zur herstellung eines positiven resistbildes - Google Patents

Verfahren zur herstellung eines positiven resistbildes

Info

Publication number
DE1696489B2
DE1696489B2 DE1968J0035428 DEJ0035428A DE1696489B2 DE 1696489 B2 DE1696489 B2 DE 1696489B2 DE 1968J0035428 DE1968J0035428 DE 1968J0035428 DE J0035428 A DEJ0035428 A DE J0035428A DE 1696489 B2 DE1696489 B2 DE 1696489B2
Authority
DE
Germany
Prior art keywords
polymer material
resist
layer
irradiated
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE1968J0035428
Other languages
German (de)
English (en)
Other versions
DE1696489A1 (de
Inventor
Ivan Hartsdale; Hatzakis Michael Ossining; N. Y.; Srinivasan Rangaswamy Columbus Ohio; Halter (V.StA.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE1696489A1 publication Critical patent/DE1696489A1/de
Publication of DE1696489B2 publication Critical patent/DE1696489B2/de
Granted legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • H10W74/47—

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electron Beam Exposure (AREA)
DE1968J0035428 1967-01-13 1968-01-05 Verfahren zur herstellung eines positiven resistbildes Granted DE1696489B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60914567A 1967-01-13 1967-01-13

Publications (2)

Publication Number Publication Date
DE1696489A1 DE1696489A1 (de) 1971-04-01
DE1696489B2 true DE1696489B2 (de) 1977-05-26

Family

ID=24439533

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1968J0035428 Granted DE1696489B2 (de) 1967-01-13 1968-01-05 Verfahren zur herstellung eines positiven resistbildes

Country Status (4)

Country Link
US (1) US3535137A (cg-RX-API-DMAC10.html)
DE (1) DE1696489B2 (cg-RX-API-DMAC10.html)
FR (1) FR1548846A (cg-RX-API-DMAC10.html)
GB (1) GB1147490A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2949994A1 (de) * 1978-12-12 1980-06-19 Mitsui Petrochemical Ind Aufzeichnungsmaterial zur erzeugung eines positiven bildes und verfahren zur erzeugung eines positiven bildes

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US3885060A (en) * 1968-08-23 1975-05-20 Hitachi Ltd Production of insolubilized organic polymers
GB1330502A (en) * 1970-09-21 1973-09-19 Texas Instruments Ltd Manufacture of masks
US3804663A (en) * 1971-05-26 1974-04-16 Dow Chemical Co Method of internally coating rigid or semi-rigid plastic containers
US3779806A (en) * 1972-03-24 1973-12-18 Ibm Electron beam sensitive polymer t-butyl methacrylate resist
DE2231815C2 (de) * 1972-06-29 1982-04-15 Hoechst Ag, 6000 Frankfurt Verfahren zum Herstellen eines Reliefs mittels Elektronenstrahlen
GB1421805A (en) * 1972-11-13 1976-01-21 Ibm Method of forming a positive resist
GB1445345A (en) * 1972-12-21 1976-08-11 Mullard Ltd Positive-working electron resists
US3930857A (en) * 1973-05-03 1976-01-06 International Business Machines Corporation Resist process
US3971860A (en) * 1973-05-07 1976-07-27 International Business Machines Corporation Method for making device for high resolution electron beam fabrication
US3893127A (en) * 1973-09-27 1975-07-01 Rca Corp Electron beam recording media
JPS576578B2 (cg-RX-API-DMAC10.html) * 1973-11-05 1982-02-05
US3934057A (en) * 1973-12-19 1976-01-20 International Business Machines Corporation High sensitivity positive resist layers and mask formation process
US3884696A (en) * 1974-03-05 1975-05-20 Bell Telephone Labor Inc Positive photoresist comprising polysulfones formed by reacting vinyl aromatic hydrocarbons with sulfur dioxide
US3996393A (en) * 1974-03-25 1976-12-07 International Business Machines Corporation Positive polymeric electron beam resists of very great sensitivity
US3987215A (en) * 1974-04-22 1976-10-19 International Business Machines Corporation Resist mask formation process
US4078098A (en) * 1974-05-28 1978-03-07 International Business Machines Corporation High energy radiation exposed positive resist mask process
US3898350A (en) * 1974-06-27 1975-08-05 Ibm Terpolymers for electron beam positive resists
US3961102A (en) * 1974-09-13 1976-06-01 Cornwell Research Foundation, Inc. Scanning electron microscope fabrication of optical gratings
US3961099A (en) * 1974-09-26 1976-06-01 International Business Machines Corporation Thermally stable positive polycarbonate electron beam resists
FR2290458A1 (fr) * 1974-11-08 1976-06-04 Thomson Csf Resine sensible aux electrons et son application a la realisation de masques de haute resolution pour la fabrication de composants electroniques
US3931435A (en) * 1974-12-20 1976-01-06 International Business Machines Corporation Electron beam positive resists containing acetate polymers
US3985915A (en) * 1974-12-20 1976-10-12 International Business Machines Corporation Use of nitrocellulose containing 10.5 to 12% nitrogen as electron beam positive resists
US4011351A (en) * 1975-01-29 1977-03-08 International Business Machines Corporation Preparation of resist image with methacrylate polymers
US4188095A (en) * 1975-07-29 1980-02-12 Citizen Watch Co., Ltd. Liquid type display cells and method of manufacturing the same
US3964908A (en) * 1975-09-22 1976-06-22 International Business Machines Corporation Positive resists containing dimethylglutarimide units
US4004043A (en) * 1975-09-26 1977-01-18 International Business Machines Corporation Nitrated polymers as positive resists
US4024293A (en) * 1975-12-10 1977-05-17 International Business Machines Corporation High sensitivity resist system for lift-off metallization
US4103064A (en) * 1976-01-09 1978-07-25 Dios, Inc. Microdevice substrate and method for making micropattern devices
JPS5290269A (en) * 1976-01-23 1977-07-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for fine resist patterns
GB1539700A (en) * 1976-05-14 1979-01-31 Int Plasma Corp Process for etching sio2
US4099062A (en) * 1976-12-27 1978-07-04 International Business Machines Corporation Electron beam lithography process
JPS5511217A (en) * 1978-07-10 1980-01-26 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method using radiation sensitive high polymer
NL8006947A (nl) * 1980-12-22 1982-07-16 Philips Nv Werkwijze voor de vervaardiging van een optisch uitleesbare informatiedrager.
US4430419A (en) 1981-01-22 1984-02-07 Nippon Telegraph & Telephone Public Corporation Positive resist and method for manufacturing a pattern thereof
CA1164261A (en) * 1981-04-21 1984-03-27 Tsukasa Tada PROCESS FOR FORMING RESIST PATTERNS BY DEVELOPING A POLYMER CONTAINING TRIFLUOROETHYL-.alpha.- CHLOROCRYLATE UNITS WITH SPECIFIC KETONE COMPOUNDS
JPS57202534A (en) * 1981-06-09 1982-12-11 Fujitsu Ltd Negative type resist composition
EP0104235A4 (en) * 1982-03-29 1984-09-14 Motorola Inc METHOD OF FORMING A HYBRID LITHOGRAPHIC PROTECTION MATERIAL WITH ELECTRONIC / OPTICAL RADIUS.
ES525880A0 (es) * 1982-09-28 1985-03-01 Exxon Research Engineering Co Un metodo de aumentar la sensibilidad de una capa protectora positiva de polimero
US4608281A (en) * 1982-09-28 1986-08-26 Exxon Research And Engineering Co. Improvements in sensitivity of a positive polymer resist having a glass transition temperature through control of a molecular weight distribution and prebaked temperature
US4604305A (en) * 1982-09-28 1986-08-05 Exxon Research And Engineering Co. Improvements in contrast of a positive polymer resist having a glass transition temperature through control of the molecular weight distribution and prebaked temperature
US4456675A (en) * 1983-07-26 1984-06-26 International Business Machines Corporation Dry process for forming metal patterns wherein metal is deposited on a depolymerizable polymer and selectively removed
US4539222A (en) * 1983-11-30 1985-09-03 International Business Machines Corporation Process for forming metal patterns wherein metal is deposited on a thermally depolymerizable polymer and selectively removed
US4519872A (en) * 1984-06-11 1985-05-28 International Business Machines Corporation Use of depolymerizable polymers in the fabrication of lift-off structure for multilevel metal processes
JPH0234984A (ja) * 1988-04-13 1990-02-05 Mitsubishi Electric Corp プリント回路基板の製造方法
US5189777A (en) * 1990-12-07 1993-03-02 Wisconsin Alumni Research Foundation Method of producing micromachined differential pressure transducers
US5206983A (en) * 1991-06-24 1993-05-04 Wisconsin Alumni Research Foundation Method of manufacturing micromechanical devices
US5190637A (en) * 1992-04-24 1993-03-02 Wisconsin Alumni Research Foundation Formation of microstructures by multiple level deep X-ray lithography with sacrificial metal layers
US5378583A (en) * 1992-12-22 1995-01-03 Wisconsin Alumni Research Foundation Formation of microstructures using a preformed photoresist sheet
US5460921A (en) * 1993-09-08 1995-10-24 International Business Machines Corporation High density pattern template: materials and processes for the application of conductive pastes
US5955242A (en) * 1996-09-23 1999-09-21 International Business Machines Corporation High sensitivity, photo-active polymer and developers for high resolution resist applications
US6436605B1 (en) 1999-07-12 2002-08-20 International Business Machines Corporation Plasma resistant composition and use thereof
US6780233B1 (en) 2001-05-24 2004-08-24 Seagate Technology Llc Wettability improvement of spun-on resist and thermoplastic materials
EP2488918B1 (en) 2009-10-14 2018-07-25 Xyleco, Inc. Marking paper products
SG11201700017SA (en) 2014-07-08 2017-01-27 Xyleco Inc Marking plastic-based products

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2892712A (en) * 1954-04-23 1959-06-30 Du Pont Process for preparing relief images
US2895891A (en) * 1957-05-15 1959-07-21 Gen Electric Cellulosic materials
US2989492A (en) * 1959-03-17 1961-06-20 Du Pont Coating composition comprising nitrocellulose, polymer of methyl methacrylate and carbon black
US3196008A (en) * 1962-05-08 1965-07-20 Xerox Corp Electrophotographic process for formation of frost-like deformation images in mechanically deformable photoconductive layers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2949994A1 (de) * 1978-12-12 1980-06-19 Mitsui Petrochemical Ind Aufzeichnungsmaterial zur erzeugung eines positiven bildes und verfahren zur erzeugung eines positiven bildes

Also Published As

Publication number Publication date
DE1696489A1 (de) 1971-04-01
US3535137A (en) 1970-10-20
GB1147490A (en) 1969-04-02
FR1548846A (cg-RX-API-DMAC10.html) 1968-12-06

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
EHJ Ceased/non-payment of the annual fee