DE1619987B2 - Verfahren zur herstellung von kristallen, insbesondere fuer halbleitervorrichtungen - Google Patents
Verfahren zur herstellung von kristallen, insbesondere fuer halbleitervorrichtungenInfo
- Publication number
- DE1619987B2 DE1619987B2 DE1967N0031338 DEN0031338A DE1619987B2 DE 1619987 B2 DE1619987 B2 DE 1619987B2 DE 1967N0031338 DE1967N0031338 DE 1967N0031338 DE N0031338 A DEN0031338 A DE N0031338A DE 1619987 B2 DE1619987 B2 DE 1619987B2
- Authority
- DE
- Germany
- Prior art keywords
- solvent
- solution
- seed crystal
- crystals
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000004065 semiconductor Substances 0.000 title description 7
- 239000002904 solvent Substances 0.000 claims description 23
- 239000000243 solution Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 5
- 239000000155 melt Substances 0.000 claims description 5
- 238000002425 crystallisation Methods 0.000 claims description 3
- 230000008025 crystallization Effects 0.000 claims description 3
- 239000012047 saturated solution Substances 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 2
- 239000003039 volatile agent Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910005540 GaP Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910000681 Silicon-tin Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- -1 gallium phosphide Chemical class 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6614999A NL6614999A (enrdf_load_stackoverflow) | 1966-10-22 | 1966-10-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1619987A1 DE1619987A1 (de) | 1970-03-26 |
| DE1619987B2 true DE1619987B2 (de) | 1977-01-20 |
Family
ID=19797982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1967N0031338 Granted DE1619987B2 (de) | 1966-10-22 | 1967-10-04 | Verfahren zur herstellung von kristallen, insbesondere fuer halbleitervorrichtungen |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3597171A (enrdf_load_stackoverflow) |
| AT (1) | AT270754B (enrdf_load_stackoverflow) |
| BE (1) | BE705462A (enrdf_load_stackoverflow) |
| CH (1) | CH494065A (enrdf_load_stackoverflow) |
| DE (1) | DE1619987B2 (enrdf_load_stackoverflow) |
| DK (1) | DK115390B (enrdf_load_stackoverflow) |
| GB (1) | GB1165037A (enrdf_load_stackoverflow) |
| NL (1) | NL6614999A (enrdf_load_stackoverflow) |
| SE (1) | SE309966B (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50119566A (enrdf_load_stackoverflow) * | 1974-03-01 | 1975-09-19 | ||
| US4415545A (en) * | 1980-12-15 | 1983-11-15 | Monkowski Joseph R | Solid film growth via preferential etching of liquid solutions |
| US5314571A (en) * | 1992-05-13 | 1994-05-24 | Midwest Research Institute | Crystallization from high temperature solutions of Si in copper |
-
1966
- 1966-10-22 NL NL6614999A patent/NL6614999A/xx unknown
-
1967
- 1967-10-04 DE DE1967N0031338 patent/DE1619987B2/de active Granted
- 1967-10-19 AT AT944167A patent/AT270754B/de active
- 1967-10-19 DK DK520967AA patent/DK115390B/da unknown
- 1967-10-19 US US676511A patent/US3597171A/en not_active Expired - Lifetime
- 1967-10-19 CH CH1467267A patent/CH494065A/de not_active IP Right Cessation
- 1967-10-19 SE SE14330/67A patent/SE309966B/xx unknown
- 1967-10-20 BE BE705462D patent/BE705462A/xx unknown
- 1967-10-23 GB GB48029/67A patent/GB1165037A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| SE309966B (enrdf_load_stackoverflow) | 1969-04-14 |
| DK115390B (da) | 1969-10-06 |
| GB1165037A (en) | 1969-09-24 |
| AT270754B (de) | 1969-05-12 |
| BE705462A (enrdf_load_stackoverflow) | 1968-04-22 |
| DE1619987A1 (de) | 1970-03-26 |
| CH494065A (de) | 1970-07-31 |
| NL6614999A (enrdf_load_stackoverflow) | 1968-04-23 |
| US3597171A (en) | 1971-08-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| 8339 | Ceased/non-payment of the annual fee |