DE1614218C3 - - Google Patents
Info
- Publication number
- DE1614218C3 DE1614218C3 DE19671614218 DE1614218A DE1614218C3 DE 1614218 C3 DE1614218 C3 DE 1614218C3 DE 19671614218 DE19671614218 DE 19671614218 DE 1614218 A DE1614218 A DE 1614218A DE 1614218 C3 DE1614218 C3 DE 1614218C3
- Authority
- DE
- Germany
- Prior art keywords
- metal
- semiconductor
- layer
- particles
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 118
- 229910052751 metal Inorganic materials 0.000 claims description 71
- 239000002184 metal Substances 0.000 claims description 71
- 239000002245 particle Substances 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- 239000010931 gold Substances 0.000 claims description 29
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 26
- 229910052737 gold Inorganic materials 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 23
- 229910045601 alloy Inorganic materials 0.000 claims description 20
- 239000000956 alloy Substances 0.000 claims description 20
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 16
- 230000005496 eutectics Effects 0.000 claims description 14
- 239000011856 silicon-based particle Substances 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 9
- 230000005684 electric field Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005755 formation reaction Methods 0.000 claims description 6
- 239000000969 carrier Substances 0.000 claims description 5
- 230000005484 gravity Effects 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 230000000875 corresponding Effects 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 238000004070 electrodeposition Methods 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 238000002844 melting Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 10
- 150000002739 metals Chemical class 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 6
- 239000003792 electrolyte Substances 0.000 description 5
- 229910000676 Si alloy Inorganic materials 0.000 description 4
- -1 gold silicon Chemical compound 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 241001156002 Anthonomus pomorum Species 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052803 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001962 electrophoresis Methods 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000000873 masking Effects 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N AI2O3 Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N Aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- CAMXVZOXBADHNJ-UHFFFAOYSA-N Ammonium nitrite Chemical compound [NH4+].[O-]N=O CAMXVZOXBADHNJ-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GALPHPSAKJXOOD-UHFFFAOYSA-N Cl.[Sb] Chemical compound Cl.[Sb] GALPHPSAKJXOOD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L Nickel(II) chloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001427 coherent Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000374 eutectic mixture Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AEMRFAOFKBGASW-UHFFFAOYSA-N glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 1
- 229960004275 glycolic acid Drugs 0.000 description 1
- NGUZTADMUGRNLI-UHFFFAOYSA-N gold;dicyanide Chemical compound [Au].N#[C-].N#[C-] NGUZTADMUGRNLI-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000002452 interceptive Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 150000002816 nickel compounds Chemical class 0.000 description 1
- 230000001590 oxidative Effects 0.000 description 1
- 101700030570 pad-1 Proteins 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000002965 rope Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- BZKBCQXYZZXSCO-UHFFFAOYSA-N sodium hydride Inorganic materials [H-].[Na+] BZKBCQXYZZXSCO-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR49866A FR1474973A (fr) | 1966-02-16 | 1966-02-16 | Procédé de fabrication d'une couche de contact pour dispositifs semi-conducteurs et produits obtenus |
| FR49866 | 1966-02-16 | ||
| DEN0030020 | 1967-02-16 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1614218A1 DE1614218A1 (de) | 1970-06-25 |
| DE1614218B2 DE1614218B2 (de) | 1976-01-15 |
| DE1614218C3 true DE1614218C3 (ja) | 1976-08-26 |
Family
ID=8601511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19671614218 Granted DE1614218B2 (de) | 1966-02-16 | 1967-02-16 | Verfahren zum herstellen einer kontaktschicht fuer halbleiteranordnungen |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3522087A (ja) |
| AT (1) | AT276487B (ja) |
| BE (1) | BE694184A (ja) |
| CH (1) | CH513250A (ja) |
| DE (1) | DE1614218B2 (ja) |
| ES (1) | ES336799A1 (ja) |
| FR (1) | FR1474973A (ja) |
| GB (1) | GB1177414A (ja) |
| NL (1) | NL158322B (ja) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4094675A (en) * | 1973-07-23 | 1978-06-13 | Licentia Patent-Verwaltungs-G.M.B.H. | Vapor deposition of photoconductive selenium onto a metallic substrate having a molten metal coating as bonding layer |
| US3926746A (en) * | 1973-10-04 | 1975-12-16 | Minnesota Mining & Mfg | Electrical interconnection for metallized ceramic arrays |
| FR2551461B1 (fr) * | 1977-12-21 | 1988-10-21 | Baj Vickers Ltd | Procede pour l'electrodeposition de revetements composites |
| GB2128636B (en) * | 1982-10-19 | 1986-01-08 | Motorola Ltd | Silicon-aluminium alloy metallization of semiconductor substrate |
| US5820721A (en) * | 1991-07-17 | 1998-10-13 | Beane; Alan F. | Manufacturing particles and articles having engineered properties |
| US5453293A (en) * | 1991-07-17 | 1995-09-26 | Beane; Alan F. | Methods of manufacturing coated particles having desired values of intrinsic properties and methods of applying the coated particles to objects |
| US5893966A (en) * | 1997-07-28 | 1999-04-13 | Micron Technology, Inc. | Method and apparatus for continuous processing of semiconductor wafers |
| AT408352B (de) * | 1999-03-26 | 2001-11-26 | Miba Gleitlager Ag | Galvanisch abgeschiedene legierungsschicht, insbesondere eine laufschicht eines gleitlagers |
| DE19950187A1 (de) * | 1999-10-19 | 2001-05-10 | Pv Silicon Forschungs Und Prod | Verfahren zur Herstellung von kristallinen Silizium-Dünnschichtsolarzellen |
| DE10015962C2 (de) * | 2000-03-30 | 2002-04-04 | Infineon Technologies Ag | Hochtemperaturfeste Lotverbindung für Halbleiterbauelement |
| DE10015964C2 (de) * | 2000-03-30 | 2002-06-13 | Infineon Technologies Ag | Lotband für flexible und temperaturfeste Lotverbindungen |
| JP5042894B2 (ja) * | 2008-03-19 | 2012-10-03 | 松田産業株式会社 | 電子部品およびその製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL270517A (ja) * | 1960-11-16 | |||
| NL284623A (ja) * | 1961-10-24 | |||
| US3287108A (en) * | 1963-01-07 | 1966-11-22 | Hausner Entpr Inc | Methods and apparatus for producing alloys |
| FR1370724A (fr) * | 1963-07-15 | 1964-08-28 | Electronique & Automatisme Sa | Procédé de réalisation de couches minces monocristallines |
| US3244557A (en) * | 1963-09-19 | 1966-04-05 | Ibm | Process of vapor depositing and annealing vapor deposited layers of tin-germanium and indium-germanium metastable solid solutions |
| US3183407A (en) * | 1963-10-04 | 1965-05-11 | Sony Corp | Combined electrical element |
| US3400006A (en) * | 1965-07-02 | 1968-09-03 | Libbey Owens Ford Glass Co | Transparent articles coated with gold, chromium, and germanium alloy film |
| US3400066A (en) * | 1965-11-15 | 1968-09-03 | Ibm | Sputtering processes for depositing thin films of controlled thickness |
| US3420704A (en) * | 1966-08-19 | 1969-01-07 | Nasa | Depositing semiconductor films utilizing a thermal gradient |
-
1966
- 1966-02-16 FR FR49866A patent/FR1474973A/fr not_active Expired
-
1967
- 1967-02-09 US US3522087D patent/US3522087A/en not_active Expired - Lifetime
- 1967-02-14 ES ES336799A patent/ES336799A1/es not_active Expired
- 1967-02-14 GB GB693167A patent/GB1177414A/en not_active Expired
- 1967-02-15 NL NL6702250A patent/NL158322B/xx not_active IP Right Cessation
- 1967-02-16 AT AT156067A patent/AT276487B/de active
- 1967-02-16 DE DE19671614218 patent/DE1614218B2/de active Granted
- 1967-02-16 CH CH224167A patent/CH513250A/de not_active IP Right Cessation
- 1967-02-16 BE BE694184D patent/BE694184A/xx not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1614218C3 (ja) | ||
| DE69016626T2 (de) | Direktverbundene Struktur. | |
| DE2142146C3 (de) | Verfahren zum gleichzeitigen Herstellen mehrerer Halbleiterbauelemente | |
| DE3618102A1 (de) | Verfahren zum stoffschluessigen verbinden von keramik-werkstoffen und metall sowie von gleichartigen und verschiedenartigen keramik-werkstoffen miteinander | |
| DE3882398T2 (de) | Kontakt auf Galliumarsenid und dessen Herstellungsverfahren. | |
| DE1086350B (de) | Verfahren zur Herstellung einer Halbleiteranordnung, z. B. eines Siliziumgleichrichters | |
| DE1464357B1 (de) | Verfahren zur Herstellung einer ohmschen Verbindung zwischen einem Silizium-Halbleiterkoerper und einem metallischen Traegerteil | |
| DE1292260B (de) | Silicium-Halbleiteranordnung mit Legierungselektroden und Verfahren zu ihrer Herstellung | |
| DE1614218B2 (de) | Verfahren zum herstellen einer kontaktschicht fuer halbleiteranordnungen | |
| DE1071847B (de) | Verfahren zur Herstellung einer im wesentlichen nicht gleichrichtenden flächenhaften Elektrode an dem Halbleiterkörper einer Halbleiteranordnung durch Legierung | |
| DE1521396B1 (de) | Verfahren und vorrichtung zum herstellen eines halbleiter bauelementes mit einer schottky sperrschicht | |
| DE2015247C3 (de) | Halbleiter-Bauelement | |
| DE1236660B (de) | Halbleiteranordnung mit einem plattenfoermigen, im wesentlichen einkristallinen halbleiterkoerper | |
| DE1213922B (de) | Verfahren zur Herstellung einer leicht benetzbaren Metallschicht auf einer keramischen Unterlage fuer Halbleiterbauelemente | |
| DE1102914B (de) | Verfahren zur Herstellung von Halbleiteranordnungen, wie Dioden, Transistoren od. dgl., mit einem Silizium-Halbleiterkoerper | |
| DE1614218C (de) | Verfahren zum Herstellen einer Kontaktschicht für Halbleiteranordnungen | |
| DE3151557C2 (ja) | ||
| DE102012216546A1 (de) | Halbleiterchip, verfahren zur herstellung eines halbleiterchips und verfahren zum verlöten eines halbleiterchips mit einem träger | |
| EP4225960A1 (de) | Elektrisch leitendes material mit beschichtung | |
| DE102009040632B4 (de) | Halbleiter-Bauelement und Verfahren zum Herstellen eines Halbleiter-Bauelements und damit hergestelltes Halbleiter-Bauelement | |
| DE2540999B2 (de) | Elektrischer Steckkontakt mit einer Kontaktschicht aus einer Silber-Palladium-Legierung | |
| AT232132B (de) | Halbleiteranordnung | |
| DE102006045531B3 (de) | Verfahren zum Herstellen einer Schicht auf einem Träger | |
| DE763103C (de) | Verfahren zum Aufbringen einer zusammenhaengenden, pulverfoermigen Schicht auf einen Metalltraeger in einem Sperrschichtelektrodensystem und gemaess diesem Verfahren hergestelltes Sperrschichtelektroden-system (Gleichrichter, Photozelle) | |
| AT223114B (de) | Verfahren zum Verbinden von keramischem Material mit Metall durch Verlöten und Lötmaterial |