ES336799A1 - Metodo para manufacturar una capa de contacto para disposi-tivos semiconductores. - Google Patents

Metodo para manufacturar una capa de contacto para disposi-tivos semiconductores.

Info

Publication number
ES336799A1
ES336799A1 ES336799A ES336799A ES336799A1 ES 336799 A1 ES336799 A1 ES 336799A1 ES 336799 A ES336799 A ES 336799A ES 336799 A ES336799 A ES 336799A ES 336799 A1 ES336799 A1 ES 336799A1
Authority
ES
Spain
Prior art keywords
nickel
silicon
particles
gold
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES336799A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES336799A1 publication Critical patent/ES336799A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B03SEPARATION OF SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS; MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS
    • B03DFLOTATION; DIFFERENTIAL SEDIMENTATION
    • B03D1/00Flotation
    • B03D1/02Froth-flotation processes
    • B03D1/021Froth-flotation processes for treatment of phosphate ores
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1655Process features
    • C23C18/1662Use of incorporated material in the solution or dispersion, e.g. particles, whiskers, wires
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D15/00Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/12Electroplating: Baths therefor from solutions of nickel or cobalt
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/107Melt
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31652Of asbestos
    • Y10T428/31667Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrochemistry (AREA)
  • Ceramic Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Geology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
ES336799A 1966-02-16 1967-02-14 Metodo para manufacturar una capa de contacto para disposi-tivos semiconductores. Expired ES336799A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR49866A FR1474973A (fr) 1966-02-16 1966-02-16 Procédé de fabrication d'une couche de contact pour dispositifs semi-conducteurs et produits obtenus

Publications (1)

Publication Number Publication Date
ES336799A1 true ES336799A1 (es) 1968-01-01

Family

ID=8601511

Family Applications (1)

Application Number Title Priority Date Filing Date
ES336799A Expired ES336799A1 (es) 1966-02-16 1967-02-14 Metodo para manufacturar una capa de contacto para disposi-tivos semiconductores.

Country Status (9)

Country Link
US (1) US3522087A (es)
AT (1) AT276487B (es)
BE (1) BE694184A (es)
CH (1) CH513250A (es)
DE (1) DE1614218B2 (es)
ES (1) ES336799A1 (es)
FR (1) FR1474973A (es)
GB (1) GB1177414A (es)
NL (1) NL158322B (es)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094675A (en) * 1973-07-23 1978-06-13 Licentia Patent-Verwaltungs-G.M.B.H. Vapor deposition of photoconductive selenium onto a metallic substrate having a molten metal coating as bonding layer
US3926746A (en) * 1973-10-04 1975-12-16 Minnesota Mining & Mfg Electrical interconnection for metallized ceramic arrays
FR2551461B1 (fr) * 1977-12-21 1988-10-21 Baj Vickers Ltd Procede pour l'electrodeposition de revetements composites
GB2128636B (en) * 1982-10-19 1986-01-08 Motorola Ltd Silicon-aluminium alloy metallization of semiconductor substrate
US5614320A (en) * 1991-07-17 1997-03-25 Beane; Alan F. Particles having engineered properties
US5453293A (en) * 1991-07-17 1995-09-26 Beane; Alan F. Methods of manufacturing coated particles having desired values of intrinsic properties and methods of applying the coated particles to objects
US5893966A (en) 1997-07-28 1999-04-13 Micron Technology, Inc. Method and apparatus for continuous processing of semiconductor wafers
AT408352B (de) * 1999-03-26 2001-11-26 Miba Gleitlager Ag Galvanisch abgeschiedene legierungsschicht, insbesondere eine laufschicht eines gleitlagers
DE19950187A1 (de) * 1999-10-19 2001-05-10 Pv Silicon Forschungs Und Prod Verfahren zur Herstellung von kristallinen Silizium-Dünnschichtsolarzellen
DE10015962C2 (de) * 2000-03-30 2002-04-04 Infineon Technologies Ag Hochtemperaturfeste Lotverbindung für Halbleiterbauelement
DE10015964C2 (de) * 2000-03-30 2002-06-13 Infineon Technologies Ag Lotband für flexible und temperaturfeste Lotverbindungen
JP5042894B2 (ja) * 2008-03-19 2012-10-03 松田産業株式会社 電子部品およびその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL132800C (es) * 1960-11-16
NL284623A (es) * 1961-10-24
US3287108A (en) * 1963-01-07 1966-11-22 Hausner Entpr Inc Methods and apparatus for producing alloys
FR1370724A (fr) * 1963-07-15 1964-08-28 Electronique & Automatisme Sa Procédé de réalisation de couches minces monocristallines
US3244557A (en) * 1963-09-19 1966-04-05 Ibm Process of vapor depositing and annealing vapor deposited layers of tin-germanium and indium-germanium metastable solid solutions
US3183407A (en) * 1963-10-04 1965-05-11 Sony Corp Combined electrical element
US3400006A (en) * 1965-07-02 1968-09-03 Libbey Owens Ford Glass Co Transparent articles coated with gold, chromium, and germanium alloy film
US3400066A (en) * 1965-11-15 1968-09-03 Ibm Sputtering processes for depositing thin films of controlled thickness
US3420704A (en) * 1966-08-19 1969-01-07 Nasa Depositing semiconductor films utilizing a thermal gradient

Also Published As

Publication number Publication date
AT276487B (de) 1969-11-25
FR1474973A (fr) 1967-03-31
DE1614218A1 (de) 1970-06-25
US3522087A (en) 1970-07-28
GB1177414A (en) 1970-01-14
NL6702250A (es) 1967-08-17
BE694184A (es) 1967-08-16
CH513250A (de) 1971-09-30
NL158322B (nl) 1978-10-16
DE1614218B2 (de) 1976-01-15

Similar Documents

Publication Publication Date Title
ES336799A1 (es) Metodo para manufacturar una capa de contacto para disposi-tivos semiconductores.
US2971251A (en) Semi-conductive device
US3361592A (en) Semiconductor device manufacture
GB1333848A (en) Method of bonding metal bodies together by vibratory energy
ES465472A1 (es) Procedimiento para la deposicion no electrolitica de metalessobre la superficie de aluminio o aleacion de aluminio.
GB1090311A (en) Semiconductor diodes
GB1031436A (en) Improvements in and relating to methods of soft-soldering
US3798056A (en) Electroless plating process
US2820932A (en) Contact structure
GB823559A (en) Improvements in or relating to silicon semiconductor devices
US3304362A (en) Glass-to-metal seals in electronic devices
GB1384850A (en) Semiconductor components
GB1160213A (en) A Method of Growing Semiconductor Crystals
US3159462A (en) Semiconductor and secured metal base and method of making the same
GB1225088A (es)
US3000085A (en) Plating of sintered tungsten contacts
GB1149606A (en) Mounting for a semiconductor wafer which is resistant to fatigue caused by thermal stresses
GB1198884A (en) Silicon Semiconductor with Metal-Silicide Heterojunction
GB1341124A (en) Semiconductor device
GB1263599A (en) Improvements in or relating to pressure-sensitive electric transducers
GB1290926A (es)
EP0086520B1 (en) Method of depositing a metal
US3178271A (en) High temperature ohmic joint for silicon semiconductor devices and method of forming same
GB1083772A (en) Improvements in or relating to semiconductor devices
GB942232A (en) Improvements in semi-conductor devices