DE1589917A1 - Verfahren zur Herstellung von Planartransistoren - Google Patents

Verfahren zur Herstellung von Planartransistoren

Info

Publication number
DE1589917A1
DE1589917A1 DE19671589917 DE1589917A DE1589917A1 DE 1589917 A1 DE1589917 A1 DE 1589917A1 DE 19671589917 DE19671589917 DE 19671589917 DE 1589917 A DE1589917 A DE 1589917A DE 1589917 A1 DE1589917 A1 DE 1589917A1
Authority
DE
Germany
Prior art keywords
diffusion
zones
zone
diffusion process
distance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19671589917
Other languages
German (de)
English (en)
Inventor
Langdon Jack Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE1589917A1 publication Critical patent/DE1589917A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
DE19671589917 1966-01-14 1967-01-05 Verfahren zur Herstellung von Planartransistoren Pending DE1589917A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US520621A US3389023A (en) 1966-01-14 1966-01-14 Methods of making a narrow emitter transistor by masking and diffusion

Publications (1)

Publication Number Publication Date
DE1589917A1 true DE1589917A1 (de) 1970-06-04

Family

ID=24073385

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19671589917 Pending DE1589917A1 (de) 1966-01-14 1967-01-05 Verfahren zur Herstellung von Planartransistoren

Country Status (7)

Country Link
US (1) US3389023A (enExample)
BE (1) BE692593A (enExample)
CH (1) CH455054A (enExample)
DE (1) DE1589917A1 (enExample)
FR (1) FR1508601A (enExample)
GB (1) GB1142068A (enExample)
NL (1) NL6700625A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1099049A (en) * 1965-12-28 1968-01-10 Telefunken Patent A method of manufacturing transistors
GB1153497A (en) * 1966-07-25 1969-05-29 Associated Semiconductor Mft Improvements in and relating to Semiconductor Devices
US3489622A (en) * 1967-05-18 1970-01-13 Ibm Method of making high frequency transistors
JPS5148286A (en) * 1974-10-23 1976-04-24 Mitsubishi Electric Corp Shusekikairogatasenkeizofukuki
JPS6410951B2 (enExample) * 1979-12-28 1989-02-22 Intaanashonaru Bijinesu Mashiinzu Corp

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3281915A (en) * 1963-04-02 1966-11-01 Rca Corp Method of fabricating a semiconductor device
US3319311A (en) * 1963-05-24 1967-05-16 Ibm Semiconductor devices and their fabrication

Also Published As

Publication number Publication date
CH455054A (de) 1968-04-30
GB1142068A (en) 1969-02-05
BE692593A (enExample) 1967-06-16
NL6700625A (enExample) 1967-07-17
FR1508601A (fr) 1968-01-05
US3389023A (en) 1968-06-18

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