DE1564536B2 - Transistor - Google Patents
TransistorInfo
- Publication number
- DE1564536B2 DE1564536B2 DE19661564536 DE1564536A DE1564536B2 DE 1564536 B2 DE1564536 B2 DE 1564536B2 DE 19661564536 DE19661564536 DE 19661564536 DE 1564536 A DE1564536 A DE 1564536A DE 1564536 B2 DE1564536 B2 DE 1564536B2
- Authority
- DE
- Germany
- Prior art keywords
- collector
- zone
- base
- layer
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000015556 catabolic process Effects 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 241000132536 Cirsium Species 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 230000006378 damage Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 230000001788 irregular Effects 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US472796A US3383571A (en) | 1965-07-19 | 1965-07-19 | High-frequency power transistor with improved reverse-bias second breakdown characteristics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1564536A1 DE1564536A1 (de) | 1970-05-14 |
| DE1564536B2 true DE1564536B2 (de) | 1972-06-22 |
Family
ID=23876982
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19661564536 Ceased DE1564536B2 (de) | 1965-07-19 | 1966-07-15 | Transistor |
| DE19666602334U Expired DE6602334U (de) | 1965-07-19 | 1966-07-15 | Transistor |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19666602334U Expired DE6602334U (de) | 1965-07-19 | 1966-07-15 | Transistor |
Country Status (7)
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2108781B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1970-10-05 | 1974-10-31 | Radiotechnique Compelec | |
| US3940783A (en) * | 1974-02-11 | 1976-02-24 | Signetics Corporation | Majority carriers-variable threshold rectifier and/or voltage reference semiconductor structure |
| US4226648A (en) * | 1979-03-16 | 1980-10-07 | Bell Telephone Laboratories, Incorporated | Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy |
| DE10126627A1 (de) * | 2001-05-31 | 2002-12-12 | Infineon Technologies Ag | Halbleiterstruktur und Verfahren zur Verbesserung der ESD-Festigkeit derselben |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL260906A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1960-02-12 | |||
| US3131098A (en) * | 1960-10-26 | 1964-04-28 | Merck & Co Inc | Epitaxial deposition on a substrate placed in a socket of the carrier member |
| NL273009A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1960-12-29 | |||
| BE627295A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1962-01-18 | |||
| US3153731A (en) * | 1962-02-26 | 1964-10-20 | Merck & Co Inc | Semiconductor solid circuit including at least two transistors and zener diodes formed therein |
-
1965
- 1965-07-19 US US472796A patent/US3383571A/en not_active Expired - Lifetime
-
1966
- 1966-07-04 GB GB29921/66A patent/GB1147676A/en not_active Expired
- 1966-07-15 DE DE19661564536 patent/DE1564536B2/de not_active Ceased
- 1966-07-15 DE DE19666602334U patent/DE6602334U/de not_active Expired
- 1966-07-16 ES ES0329228A patent/ES329228A1/es not_active Expired
- 1966-07-18 SE SE09783/66A patent/SE336847B/xx unknown
- 1966-07-18 NL NL666610089A patent/NL151844B/xx unknown
- 1966-07-19 BR BR181392/66A patent/BR6681392D0/pt unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL6610089A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1967-01-20 |
| NL151844B (nl) | 1976-12-15 |
| US3383571A (en) | 1968-05-14 |
| GB1147676A (en) | 1969-04-02 |
| ES329228A1 (es) | 1967-05-01 |
| DE6602334U (de) | 1969-05-22 |
| SE336847B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1971-07-19 |
| BR6681392D0 (pt) | 1973-05-15 |
| DE1564536A1 (de) | 1970-05-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BHV | Refusal |