GB1147676A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB1147676A GB1147676A GB29921/66A GB2992166A GB1147676A GB 1147676 A GB1147676 A GB 1147676A GB 29921/66 A GB29921/66 A GB 29921/66A GB 2992166 A GB2992166 A GB 2992166A GB 1147676 A GB1147676 A GB 1147676A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- regions
- resistivity
- base region
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000010410 layer Substances 0.000 abstract 5
- 239000002019 doping agent Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 abstract 2
- 238000005137 deposition process Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US472796A US3383571A (en) | 1965-07-19 | 1965-07-19 | High-frequency power transistor with improved reverse-bias second breakdown characteristics |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1147676A true GB1147676A (en) | 1969-04-02 |
Family
ID=23876982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB29921/66A Expired GB1147676A (en) | 1965-07-19 | 1966-07-04 | Semiconductor device |
Country Status (7)
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2108781B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1970-10-05 | 1974-10-31 | Radiotechnique Compelec | |
US3940783A (en) * | 1974-02-11 | 1976-02-24 | Signetics Corporation | Majority carriers-variable threshold rectifier and/or voltage reference semiconductor structure |
US4226648A (en) * | 1979-03-16 | 1980-10-07 | Bell Telephone Laboratories, Incorporated | Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy |
DE10126627A1 (de) * | 2001-05-31 | 2002-12-12 | Infineon Technologies Ag | Halbleiterstruktur und Verfahren zur Verbesserung der ESD-Festigkeit derselben |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL260906A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1960-02-12 | |||
US3131098A (en) * | 1960-10-26 | 1964-04-28 | Merck & Co Inc | Epitaxial deposition on a substrate placed in a socket of the carrier member |
NL273009A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1960-12-29 | |||
BE627295A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1962-01-18 | |||
US3153731A (en) * | 1962-02-26 | 1964-10-20 | Merck & Co Inc | Semiconductor solid circuit including at least two transistors and zener diodes formed therein |
-
1965
- 1965-07-19 US US472796A patent/US3383571A/en not_active Expired - Lifetime
-
1966
- 1966-07-04 GB GB29921/66A patent/GB1147676A/en not_active Expired
- 1966-07-15 DE DE19661564536 patent/DE1564536B2/de not_active Ceased
- 1966-07-15 DE DE19666602334U patent/DE6602334U/de not_active Expired
- 1966-07-16 ES ES0329228A patent/ES329228A1/es not_active Expired
- 1966-07-18 SE SE09783/66A patent/SE336847B/xx unknown
- 1966-07-18 NL NL666610089A patent/NL151844B/xx unknown
- 1966-07-19 BR BR181392/66A patent/BR6681392D0/pt unknown
Also Published As
Publication number | Publication date |
---|---|
NL6610089A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1967-01-20 |
DE1564536B2 (de) | 1972-06-22 |
NL151844B (nl) | 1976-12-15 |
SE336847B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1971-07-19 |
US3383571A (en) | 1968-05-14 |
BR6681392D0 (pt) | 1973-05-15 |
DE6602334U (de) | 1969-05-22 |
DE1564536A1 (de) | 1970-05-14 |
ES329228A1 (es) | 1967-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1047388A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
GB1116209A (en) | Improvements in semiconductor structures | |
GB1197403A (en) | Improvements relating to Semiconductor Devices | |
GB1206427A (en) | Manufacturing semiconductor devices | |
GB1041681A (en) | Switching transistor structure and method of making same | |
GB1226899A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
GB1046152A (en) | Diode structure in semiconductor integrated circuit and method of making same | |
US3380153A (en) | Method of forming a semiconductor integrated circuit that includes a fast switching transistor | |
GB1012124A (en) | Improvements in or relating to semiconductor devices | |
GB1003131A (en) | Semiconductor devices and their fabrication | |
GB1058240A (en) | Semiconductor device | |
GB1291383A (en) | Improvements in and relating to semiconductor devices | |
GB1379975A (en) | Methods of manufacturing a semiconductor device comprising a voltagedependant capacitance diode | |
GB1073551A (en) | Integrated circuit comprising a diode and method of making the same | |
GB1137388A (en) | Semiconductor device | |
GB1229293A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
GB1229294A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
GB1217472A (en) | Integrated circuits | |
GB1071976A (en) | Field-effect semiconductor device | |
GB1224801A (en) | Methods of manufacturing semiconductor devices | |
GB1147676A (en) | Semiconductor device | |
GB1152156A (en) | Semiconductor Devices | |
GB1103184A (en) | Improvements relating to semiconductor circuits | |
US3283223A (en) | Transistor and method of fabrication to minimize surface recombination effects | |
GB995700A (en) | Double epitaxial layer semiconductor structures |