DE1564068A1 - Fieldistor-Tetrode - Google Patents
Fieldistor-TetrodeInfo
- Publication number
- DE1564068A1 DE1564068A1 DE19661564068 DE1564068A DE1564068A1 DE 1564068 A1 DE1564068 A1 DE 1564068A1 DE 19661564068 DE19661564068 DE 19661564068 DE 1564068 A DE1564068 A DE 1564068A DE 1564068 A1 DE1564068 A1 DE 1564068A1
- Authority
- DE
- Germany
- Prior art keywords
- base body
- semiconductor
- electrodes
- fieldistor
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 47
- 239000004020 conductor Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 description 26
- 239000010703 silicon Substances 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 238000009792 diffusion process Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 9
- 210000002105 tongue Anatomy 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PDHBRMFYIFYPQM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au].[Au] PDHBRMFYIFYPQM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
- H10D30/831—Vertical FETs having PN junction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US442079A US3354362A (en) | 1965-03-23 | 1965-03-23 | Planar multi-channel field-effect tetrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1564068A1 true DE1564068A1 (de) | 1969-12-18 |
Family
ID=23755465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19661564068 Pending DE1564068A1 (de) | 1965-03-23 | 1966-03-22 | Fieldistor-Tetrode |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3354362A (cg-RX-API-DMAC7.html) |
| DE (1) | DE1564068A1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1071976A (cg-RX-API-DMAC7.html) |
| SE (1) | SE316535B (cg-RX-API-DMAC7.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2734997A1 (de) * | 1976-08-03 | 1978-02-16 | Zaidan Hojin Handotai Kenkyu | Integrierte halbleiterschaltung |
| EP0077706A1 (fr) * | 1981-10-16 | 1983-04-27 | Thomson-Csf | Transistor à effet de champ à canal vertical |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3440502A (en) * | 1966-07-05 | 1969-04-22 | Westinghouse Electric Corp | Insulated gate field effect transistor structure with reduced current leakage |
| US3466511A (en) * | 1967-05-05 | 1969-09-09 | Westinghouse Electric Corp | Insulated gate field effect transistors with means preventing overvoltage feedthrough by auxiliary structure providing bipolar transistor action through substrate |
| US3456166A (en) * | 1967-05-11 | 1969-07-15 | Teledyne Inc | Junction capacitor |
| DE1764911A1 (de) * | 1968-09-02 | 1971-12-02 | Telefunken Patent | Unipolaranordnung |
| US3518750A (en) * | 1968-10-02 | 1970-07-07 | Nat Semiconductor Corp | Method of manufacturing a misfet |
| US4633281A (en) * | 1984-06-08 | 1986-12-30 | Eaton Corporation | Dual stack power JFET with buried field shaping depletion regions |
| US4635084A (en) * | 1984-06-08 | 1987-01-06 | Eaton Corporation | Split row power JFET |
| EP0167812A1 (en) * | 1984-06-08 | 1986-01-15 | Eaton Corporation | Double gate vertical JFET |
| US20090072314A1 (en) | 2007-09-19 | 2009-03-19 | Texas Instruments Incorporated | Depletion Mode Field Effect Transistor for ESD Protection |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1037293A (fr) * | 1951-05-19 | 1953-09-15 | Licentia Gmbh | Redresseur sec à contrôle électrique et son procédé de fabrication |
| US3035186A (en) * | 1959-06-15 | 1962-05-15 | Bell Telephone Labor Inc | Semiconductor switching apparatus |
| US3025438A (en) * | 1959-09-18 | 1962-03-13 | Tungsol Electric Inc | Field effect transistor |
| GB912114A (en) * | 1960-09-26 | 1962-12-05 | Westinghouse Electric Corp | Semiconductor devices |
| FR1317256A (fr) * | 1961-12-16 | 1963-02-08 | Teszner Stanislas | Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets |
| NL128995C (cg-RX-API-DMAC7.html) * | 1962-08-03 | |||
| US3252003A (en) * | 1962-09-10 | 1966-05-17 | Westinghouse Electric Corp | Unipolar transistor |
| US3271201A (en) * | 1962-10-30 | 1966-09-06 | Itt | Planar semiconductor devices |
| US3268374A (en) * | 1963-04-24 | 1966-08-23 | Texas Instruments Inc | Method of producing a field-effect transistor |
| US3278853A (en) * | 1963-11-21 | 1966-10-11 | Westinghouse Electric Corp | Integrated circuits with field effect transistors and diode bias means |
-
1965
- 1965-03-23 US US442079A patent/US3354362A/en not_active Expired - Lifetime
-
1966
- 1966-03-10 GB GB10564/66A patent/GB1071976A/en not_active Expired
- 1966-03-22 DE DE19661564068 patent/DE1564068A1/de active Pending
- 1966-03-22 SE SE3769/66A patent/SE316535B/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2734997A1 (de) * | 1976-08-03 | 1978-02-16 | Zaidan Hojin Handotai Kenkyu | Integrierte halbleiterschaltung |
| EP0077706A1 (fr) * | 1981-10-16 | 1983-04-27 | Thomson-Csf | Transistor à effet de champ à canal vertical |
Also Published As
| Publication number | Publication date |
|---|---|
| SE316535B (cg-RX-API-DMAC7.html) | 1969-10-27 |
| GB1071976A (en) | 1967-06-14 |
| US3354362A (en) | 1967-11-21 |
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