DE1521990A1 - Verfahren zum Bedecken zweier eng benachbarter Bereiche einer Halbleiteroberflaeche mit Dotierungs- und/oder Elektroden-Material - Google Patents
Verfahren zum Bedecken zweier eng benachbarter Bereiche einer Halbleiteroberflaeche mit Dotierungs- und/oder Elektroden-MaterialInfo
- Publication number
- DE1521990A1 DE1521990A1 DE19661521990 DE1521990A DE1521990A1 DE 1521990 A1 DE1521990 A1 DE 1521990A1 DE 19661521990 DE19661521990 DE 19661521990 DE 1521990 A DE1521990 A DE 1521990A DE 1521990 A1 DE1521990 A1 DE 1521990A1
- Authority
- DE
- Germany
- Prior art keywords
- area
- semiconductor surface
- coverage
- covering
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 238000000034 method Methods 0.000 title claims description 27
- 239000007772 electrode material Substances 0.000 title claims description 4
- 238000005530 etching Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 24
- 238000007740 vapor deposition Methods 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 230000000694 effects Effects 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000003032 molecular docking Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0101951 | 1966-02-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1521990A1 true DE1521990A1 (de) | 1970-02-05 |
Family
ID=7524100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19661521990 Pending DE1521990A1 (de) | 1966-02-11 | 1966-02-11 | Verfahren zum Bedecken zweier eng benachbarter Bereiche einer Halbleiteroberflaeche mit Dotierungs- und/oder Elektroden-Material |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT265371B (enrdf_load_stackoverflow) |
| CH (1) | CH485325A (enrdf_load_stackoverflow) |
| DE (1) | DE1521990A1 (enrdf_load_stackoverflow) |
| FR (1) | FR1511237A (enrdf_load_stackoverflow) |
| GB (1) | GB1113489A (enrdf_load_stackoverflow) |
| NL (1) | NL6616165A (enrdf_load_stackoverflow) |
| SE (1) | SE340027B (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2186424A (en) * | 1986-01-30 | 1987-08-12 | Plessey Co Plc | Method for producing integrated circuit interconnects |
-
1966
- 1966-02-11 DE DE19661521990 patent/DE1521990A1/de active Pending
- 1966-11-16 NL NL6616165A patent/NL6616165A/xx unknown
-
1967
- 1967-02-09 AT AT126467A patent/AT265371B/de active
- 1967-02-09 CH CH194467A patent/CH485325A/de not_active IP Right Cessation
- 1967-02-10 SE SE192967A patent/SE340027B/xx unknown
- 1967-02-10 FR FR94541A patent/FR1511237A/fr not_active Expired
- 1967-02-10 GB GB645267A patent/GB1113489A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| AT265371B (de) | 1968-10-10 |
| CH485325A (de) | 1970-01-31 |
| SE340027B (enrdf_load_stackoverflow) | 1971-11-01 |
| FR1511237A (fr) | 1968-01-26 |
| GB1113489A (en) | 1968-05-15 |
| NL6616165A (enrdf_load_stackoverflow) | 1967-08-14 |
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