DE1521881A1 - Verfahren zum AEtzen aus der Gasphase - Google Patents

Verfahren zum AEtzen aus der Gasphase

Info

Publication number
DE1521881A1
DE1521881A1 DE19661521881 DE1521881A DE1521881A1 DE 1521881 A1 DE1521881 A1 DE 1521881A1 DE 19661521881 DE19661521881 DE 19661521881 DE 1521881 A DE1521881 A DE 1521881A DE 1521881 A1 DE1521881 A1 DE 1521881A1
Authority
DE
Germany
Prior art keywords
semiconductor material
platelets
etching
semiconductor
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19661521881
Other languages
German (de)
English (en)
Inventor
Taylor William Edwin
Klink Howard Nassime
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE1521881A1 publication Critical patent/DE1521881A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/054—Flat sheets-substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/079—Inert carrier gas
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/974—Substrate surface preparation

Landscapes

  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
DE19661521881 1965-08-17 1966-07-23 Verfahren zum AEtzen aus der Gasphase Pending DE1521881A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US48045265A 1965-08-17 1965-08-17

Publications (1)

Publication Number Publication Date
DE1521881A1 true DE1521881A1 (de) 1969-10-16

Family

ID=23908038

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19661521881 Pending DE1521881A1 (de) 1965-08-17 1966-07-23 Verfahren zum AEtzen aus der Gasphase

Country Status (4)

Country Link
US (1) US3522118A (https=)
DE (1) DE1521881A1 (https=)
GB (1) GB1113287A (https=)
NL (1) NL6611579A (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3808072A (en) * 1972-03-22 1974-04-30 Bell Telephone Labor Inc In situ etching of gallium arsenide during vapor phase growth of epitaxial gallium arsenide
US3900363A (en) * 1972-11-15 1975-08-19 Nippon Columbia Method of making crystal
US3930908A (en) * 1974-09-30 1976-01-06 Rca Corporation Accurate control during vapor phase epitaxy
US4243865A (en) * 1976-05-14 1981-01-06 Data General Corporation Process for treating material in plasma environment
US4373990A (en) * 1981-01-08 1983-02-15 Bell Telephone Laboratories, Incorporated Dry etching aluminum
US4421576A (en) * 1981-09-14 1983-12-20 Rca Corporation Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
US4468283A (en) * 1982-12-17 1984-08-28 Irfan Ahmed Method for etching and controlled chemical vapor deposition
US4671847A (en) * 1985-11-18 1987-06-09 The United States Of America As Represented By The Secretary Of The Navy Thermally-activated vapor etchant for InP
EP0445754B1 (en) * 1990-03-06 1996-02-14 Sumitomo Electric Industries, Ltd. Method for growing a diamond or c-BN thin film
US5534314A (en) * 1994-08-31 1996-07-09 University Of Virginia Patent Foundation Directed vapor deposition of electron beam evaporant
JP3269411B2 (ja) * 1996-12-04 2002-03-25 ヤマハ株式会社 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL123477C (https=) * 1958-05-16
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
DE1238105B (de) * 1963-07-17 1967-04-06 Siemens Ag Verfahren zum Herstellen von pn-UEbergaengen in Silizium
USB389017I5 (https=) * 1964-08-12
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits

Also Published As

Publication number Publication date
GB1113287A (en) 1968-05-08
NL6611579A (https=) 1967-02-20
US3522118A (en) 1970-07-28

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