DE1521794A1 - Vorrichtung zum chemischen Polieren von Halbleiterscheiben - Google Patents
Vorrichtung zum chemischen Polieren von HalbleiterscheibenInfo
- Publication number
- DE1521794A1 DE1521794A1 DE19651521794 DE1521794A DE1521794A1 DE 1521794 A1 DE1521794 A1 DE 1521794A1 DE 19651521794 DE19651521794 DE 19651521794 DE 1521794 A DE1521794 A DE 1521794A DE 1521794 A1 DE1521794 A1 DE 1521794A1
- Authority
- DE
- Germany
- Prior art keywords
- polishing
- drum
- polishing plate
- shaped carrier
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims description 63
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 239000000126 substance Substances 0.000 title claims description 7
- 235000012431 wafers Nutrition 0.000 title description 6
- 239000000463 material Substances 0.000 claims description 8
- 238000007517 polishing process Methods 0.000 claims description 7
- 229910052783 alkali metal Inorganic materials 0.000 claims description 4
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Inorganic materials Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- -1 alkali metal hypochlorite Chemical class 0.000 claims description 2
- 150000001340 alkali metals Chemical class 0.000 claims description 2
- 239000011888 foil Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 description 16
- 239000013078 crystal Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910019093 NaOCl Inorganic materials 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 239000003518 caustics Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241000251730 Chondrichthyes Species 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- SATVIFGJTRRDQU-UHFFFAOYSA-N potassium hypochlorite Chemical compound [K+].Cl[O-] SATVIFGJTRRDQU-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/102—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being able to rotate freely due to a frictional contact with the lapping tool
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEJ0028638 | 1965-07-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1521794A1 true DE1521794A1 (de) | 1969-10-23 |
Family
ID=7203344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19651521794 Pending DE1521794A1 (de) | 1965-07-23 | 1965-07-23 | Vorrichtung zum chemischen Polieren von Halbleiterscheiben |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5016300B1 (enrdf_load_stackoverflow) |
| DE (1) | DE1521794A1 (enrdf_load_stackoverflow) |
| FR (1) | FR1486289A (enrdf_load_stackoverflow) |
| GB (1) | GB1087676A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5783497A (en) * | 1994-08-02 | 1998-07-21 | Sematech, Inc. | Forced-flow wafer polisher |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58166726A (ja) * | 1982-03-29 | 1983-10-01 | Shin Etsu Handotai Co Ltd | ウエ−ハエツチング装置 |
| DE3677735D1 (de) * | 1985-12-17 | 1991-04-04 | Max Planck Gesellschaft | Verfahren zur herstellung von halbleitersubstraten. |
| FR2876610A1 (fr) * | 2004-10-20 | 2006-04-21 | Commissariat Energie Atomique | Procede de polissage d'une surface de germanium et utilisation |
| JP4759298B2 (ja) * | 2005-03-30 | 2011-08-31 | 株式会社フジミインコーポレーテッド | 単結晶表面用の研磨剤及び研磨方法 |
| CN112538631B (zh) * | 2020-11-19 | 2023-02-10 | 贵溪市正鑫铜业有限公司 | 一种铜材抛光液的环保处理设备 |
| CN113696019B (zh) * | 2021-08-13 | 2023-03-21 | 山东宝乘电子有限公司 | 一种半导体材料的平面研磨装置及其使用方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4825817A (enrdf_load_stackoverflow) * | 1971-08-11 | 1973-04-04 |
-
1965
- 1965-07-23 DE DE19651521794 patent/DE1521794A1/de active Pending
-
1966
- 1966-07-05 FR FR7940A patent/FR1486289A/fr not_active Expired
- 1966-07-11 JP JP41044880A patent/JPS5016300B1/ja active Pending
- 1966-07-14 GB GB3158266A patent/GB1087676A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5783497A (en) * | 1994-08-02 | 1998-07-21 | Sematech, Inc. | Forced-flow wafer polisher |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5016300B1 (enrdf_load_stackoverflow) | 1975-06-12 |
| FR1486289A (fr) | 1967-06-23 |
| GB1087676A (en) | 1967-10-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE10060697B4 (de) | Doppelseiten-Polierverfahren mit reduzierter Kratzerrate und Vorrichtung zur Durchführung des Verfahrens | |
| DE69625962T2 (de) | Verfahren und Vorrichtung zum Abrichten von Polierkissen | |
| DE10132504C1 (de) | Verfahren zur beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben und seine Verwendung | |
| DE112011101518B4 (de) | Verfahren zum Polieren von Siliziumwafern | |
| DE2362028C3 (de) | Vorrichtung zum kontrastreichen Beizen von Paneelbrettern | |
| DE69522617T2 (de) | Verfahren und Vorrichtung zum Reinigen von Werkstücken | |
| DE3132028C2 (enrdf_load_stackoverflow) | ||
| DE2007865C2 (de) | Verfahren und Vorrichtung zum Polieren einer Siliciumoberfläche | |
| DE10333810B4 (de) | Verfahren zum Bearbeiten eines Halbleiterwafers einschließlich Schleifen der Rückseite | |
| DE112017005747T5 (de) | Waferkantenpoliervorrichtung und -verfahren | |
| EP0264700B1 (de) | Verfahren zum Anbringen einer umlaufenden Hohlkehle am Rand einer Halbleiterscheibe eines Leistungshalbleiter-Bauelements | |
| DE112011102252T5 (de) | Verfahren zum Polieren von Siliziumwafern | |
| DE19649216A1 (de) | Verfahren und Vorrichtung zur Oberflächenbearbeitung | |
| DE112011102297T5 (de) | Verfahren zum Polieren von Siliziumwafern und Beschreibung der entsprechenden Polierflüssigkeit | |
| DE1216651B (de) | Verfahren zum polierenden Abtragen von einkristallinen Halbleiterkoerpern, insbesondere Halbleiterscheiben | |
| DE1521794A1 (de) | Vorrichtung zum chemischen Polieren von Halbleiterscheiben | |
| DE3148957A1 (de) | "verfahren zur rueckseitengetternden oberflaechenbehandlung von halbleiterscheiben" | |
| DE112017004349B4 (de) | Verfahren zum Läppen eines Halbleiterwafers | |
| DE3033944A1 (de) | Laeppvorrichtung fuer duenne plaettchen und aufspannvorrichtung fuer dieselben als teil der laeppvorrichtung | |
| DE2643750A1 (de) | Verfahren zum aetzen von halbleiterscheiben, insbesondere fuer sonnenzellen, und vorrichtung zum durchfuehren dieses verfahrens | |
| DE60110922T2 (de) | Abrichtvorrichtung für polierkissen und verfahren zu dessen anwendung | |
| DE10261465B4 (de) | Anordnung zum chemisch-mechanischen Polieren mit einem verbesserten Konditionierwerkzeug | |
| DE10162597C1 (de) | Verfahren zur Herstellung beidseitig polierter Halbleiterscheiben | |
| DE60108624T2 (de) | Verfahren zum polieren und reinigen von glas | |
| DE3934140A1 (de) | Verfahren zur die ausbildung von getterfaehigen zentren induzierenden oberflaechenbehandlung von halbleiterscheiben und dadurch erhaeltliche beidseitig polierte scheiben |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| SH | Request for examination between 03.10.1968 and 22.04.1971 |