DE1514855C3 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE1514855C3
DE1514855C3 DE1514855A DE1514855A DE1514855C3 DE 1514855 C3 DE1514855 C3 DE 1514855C3 DE 1514855 A DE1514855 A DE 1514855A DE 1514855 A DE1514855 A DE 1514855A DE 1514855 C3 DE1514855 C3 DE 1514855C3
Authority
DE
Germany
Prior art keywords
base body
silicon oxide
base
area
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1514855A
Other languages
German (de)
English (en)
Other versions
DE1514855B2 (de
DE1514855A1 (de
Inventor
Roy William Dallas Tex. Stiegler Jun. (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE1514855A1 publication Critical patent/DE1514855A1/de
Publication of DE1514855B2 publication Critical patent/DE1514855B2/de
Application granted granted Critical
Publication of DE1514855C3 publication Critical patent/DE1514855C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE1514855A 1964-08-20 1965-08-20 Halbleitervorrichtung Expired DE1514855C3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39083164A 1964-08-20 1964-08-20
US67811267A 1967-10-25 1967-10-25

Publications (3)

Publication Number Publication Date
DE1514855A1 DE1514855A1 (de) 1970-09-24
DE1514855B2 DE1514855B2 (de) 1971-09-30
DE1514855C3 true DE1514855C3 (de) 1974-01-24

Family

ID=27013292

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1514855A Expired DE1514855C3 (de) 1964-08-20 1965-08-20 Halbleitervorrichtung
DE1789119A Expired DE1789119C3 (de) 1964-08-20 1965-08-20 Halbleiterbauelement. Ausscheidung aus: 1514855

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE1789119A Expired DE1789119C3 (de) 1964-08-20 1965-08-20 Halbleiterbauelement. Ausscheidung aus: 1514855

Country Status (6)

Country Link
US (1) US3491273A (enExample)
CA (1) CA956038A (enExample)
DE (2) DE1514855C3 (enExample)
GB (1) GB1113344A (enExample)
MY (1) MY6900229A (enExample)
NL (1) NL6510931A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3333242A1 (de) * 1982-09-13 1984-03-15 National Semiconductor Corp., 95051 Santa Clara, Calif. Mehrleiterschichtstruktur fuer monolithische integrierte halbleiterschaltkreise

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1245765A (en) * 1967-10-13 1971-09-08 Gen Electric Surface diffused semiconductor devices
US3651565A (en) * 1968-09-09 1972-03-28 Nat Semiconductor Corp Lateral transistor structure and method of making the same
NL6904543A (enExample) * 1969-03-25 1970-09-29
DE1926989A1 (de) * 1969-05-27 1970-12-03 Beneking Prof Dr Rer Nat Heinz Hochfrequenzleitung
DE1944280B2 (de) * 1969-09-01 1971-06-09 Monolitisch integrierte festkoerperschaltung aus feldeffekttransistoren
US3763550A (en) * 1970-12-03 1973-10-09 Gen Motors Corp Geometry for a pnp silicon transistor with overlay contacts
US3697828A (en) * 1970-12-03 1972-10-10 Gen Motors Corp Geometry for a pnp silicon transistor with overlay contacts
US3767981A (en) * 1971-06-04 1973-10-23 Signetics Corp High voltage planar diode structure and method
US3961358A (en) * 1973-02-21 1976-06-01 Rca Corporation Leakage current prevention in semiconductor integrated circuit devices
JPS5124194Y1 (enExample) * 1973-10-23 1976-06-21
US4063274A (en) * 1976-12-10 1977-12-13 Rca Corporation Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors
JPS5753963A (en) * 1980-09-17 1982-03-31 Toshiba Corp Semiconductor device
US4430663A (en) 1981-03-25 1984-02-07 Bell Telephone Laboratories, Incorporated Prevention of surface channels in silicon semiconductor devices
US4580156A (en) * 1983-12-30 1986-04-01 At&T Bell Laboratories Structured resistive field shields for low-leakage high voltage devices

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3097308A (en) * 1959-03-09 1963-07-09 Rca Corp Semiconductor device with surface electrode producing electrostatic field and circuits therefor
NL123574C (enExample) * 1959-05-27
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion
NL294593A (enExample) * 1962-06-29
NL302804A (enExample) * 1962-08-23 1900-01-01
US3275910A (en) * 1963-01-18 1966-09-27 Motorola Inc Planar transistor with a relative higher-resistivity base region
US3302076A (en) * 1963-06-06 1967-01-31 Motorola Inc Semiconductor device with passivated junction
US3292240A (en) * 1963-08-08 1966-12-20 Ibm Method of fabricating microminiature functional components

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3333242A1 (de) * 1982-09-13 1984-03-15 National Semiconductor Corp., 95051 Santa Clara, Calif. Mehrleiterschichtstruktur fuer monolithische integrierte halbleiterschaltkreise

Also Published As

Publication number Publication date
DE1514855B2 (de) 1971-09-30
US3491273A (en) 1970-01-20
DE1789119C3 (de) 1974-11-21
MY6900229A (en) 1969-12-31
NL6510931A (enExample) 1966-02-21
DE1789119B2 (de) 1974-04-25
GB1113344A (en) 1968-05-15
DE1514855A1 (de) 1970-09-24
DE1789119A1 (de) 1972-04-20
CA956038A (en) 1974-10-08

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
8339 Ceased/non-payment of the annual fee