DE1464315C3 - Schaltungsanordnung mit einem strahlungsempfindhchen Halbleiter Schaltelement - Google Patents

Schaltungsanordnung mit einem strahlungsempfindhchen Halbleiter Schaltelement

Info

Publication number
DE1464315C3
DE1464315C3 DE1464315A DE1464315A DE1464315C3 DE 1464315 C3 DE1464315 C3 DE 1464315C3 DE 1464315 A DE1464315 A DE 1464315A DE 1464315 A DE1464315 A DE 1464315A DE 1464315 C3 DE1464315 C3 DE 1464315C3
Authority
DE
Germany
Prior art keywords
electrodes
electrode
switching element
voltage
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1464315A
Other languages
German (de)
English (en)
Other versions
DE1464315A1 (de
DE1464315B2 (de
Inventor
Gesinus Diemer
Leopold Heijne
Frederik Hendrik Stieltjes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1464315A1 publication Critical patent/DE1464315A1/de
Publication of DE1464315B2 publication Critical patent/DE1464315B2/de
Application granted granted Critical
Publication of DE1464315C3 publication Critical patent/DE1464315C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Light Receiving Elements (AREA)
  • Thermistors And Varistors (AREA)
DE1464315A 1962-07-02 1963-06-28 Schaltungsanordnung mit einem strahlungsempfindhchen Halbleiter Schaltelement Expired DE1464315C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL280435 1962-07-02

Publications (3)

Publication Number Publication Date
DE1464315A1 DE1464315A1 (de) 1969-03-06
DE1464315B2 DE1464315B2 (de) 1973-05-10
DE1464315C3 true DE1464315C3 (de) 1973-12-06

Family

ID=19753941

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1464315A Expired DE1464315C3 (de) 1962-07-02 1963-06-28 Schaltungsanordnung mit einem strahlungsempfindhchen Halbleiter Schaltelement

Country Status (11)

Country Link
US (1) US3324297A (enExample)
JP (1) JPS4022340B1 (enExample)
AT (1) AT265382B (enExample)
BE (1) BE634413A (enExample)
CH (1) CH429970A (enExample)
DE (1) DE1464315C3 (enExample)
ES (1) ES289480A1 (enExample)
FR (1) FR1362242A (enExample)
GB (1) GB1057801A (enExample)
NL (1) NL280435A (enExample)
SE (1) SE312613B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3415996A (en) * 1965-02-15 1968-12-10 Philips Corp Photosensitive semiconductor with two radiation sources for producing two transition steps
US3424910A (en) * 1965-04-19 1969-01-28 Hughes Aircraft Co Switching circuit using a two-carrier negative resistance device
US3465158A (en) * 1966-11-14 1969-09-02 Bunker Ramo Forward biased phototransistor with exposed base
US3773289A (en) * 1972-06-20 1973-11-20 Bell Telephone Labor Inc Photodetector delay equalizer
US3898686A (en) * 1974-03-11 1975-08-05 Rca Ltd Semiconductor radiation detector
DE2636873A1 (de) * 1976-08-17 1978-02-23 Siemens Ag Halbleiterbauelement mit zwei gekreuzten teildioden und mit transistorartigen eigenschaften
GB1605321A (en) * 1978-03-31 1989-07-19 Philips Electronic Associated Thermal radiation imaging devices and systems
US4183034A (en) * 1978-04-17 1980-01-08 International Business Machines Corp. Pin photodiode and integrated circuit including same
GB2207801B (en) * 1979-07-30 1989-05-24 Secr Defence Thermal imaging devices
GB2127221B (en) * 1982-09-06 1986-03-12 Secr Defence Radiation-controlled electrical switches
US4628203A (en) * 1985-01-14 1986-12-09 Honeywell, Inc. Non-delineated detector having a differential readout
JP2703167B2 (ja) * 1993-08-06 1998-01-26 株式会社日立製作所 受光素子及びその製造方法
US7209623B2 (en) * 2005-05-03 2007-04-24 Intel Corporation Semiconductor waveguide-based avalanche photodetector with separate absorption and multiplication regions
US7233051B2 (en) * 2005-06-28 2007-06-19 Intel Corporation Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
US7741657B2 (en) * 2006-07-17 2010-06-22 Intel Corporation Inverted planar avalanche photodiode
US7683397B2 (en) * 2006-07-20 2010-03-23 Intel Corporation Semi-planar avalanche photodiode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2794863A (en) * 1951-07-20 1957-06-04 Bell Telephone Labor Inc Semiconductor translating device and circuit
US2986591A (en) * 1955-10-17 1961-05-30 Ibm Photovoltaic cell
DE1067129B (enExample) * 1957-01-18
NL218993A (enExample) * 1957-07-15
US3040262A (en) * 1959-06-22 1962-06-19 Bell Telephone Labor Inc Light sensitive resonant circuit

Also Published As

Publication number Publication date
FR1362242A (fr) 1964-05-29
CH429970A (de) 1967-02-15
NL280435A (enExample)
AT265382B (de) 1968-10-10
BE634413A (enExample)
GB1057801A (en) 1967-02-08
SE312613B (enExample) 1969-07-21
DE1464315A1 (de) 1969-03-06
DE1464315B2 (de) 1973-05-10
US3324297A (en) 1967-06-06
ES289480A1 (es) 1963-11-01
JPS4022340B1 (enExample) 1965-10-04

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Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971
C3 Grant after two publication steps (3rd publication)