DE1464296B2 - Verfahren zum aetzen eines halbleiterbauelementes - Google Patents
Verfahren zum aetzen eines halbleiterbauelementesInfo
- Publication number
- DE1464296B2 DE1464296B2 DE19621464296 DE1464296A DE1464296B2 DE 1464296 B2 DE1464296 B2 DE 1464296B2 DE 19621464296 DE19621464296 DE 19621464296 DE 1464296 A DE1464296 A DE 1464296A DE 1464296 B2 DE1464296 B2 DE 1464296B2
- Authority
- DE
- Germany
- Prior art keywords
- electrodes
- masking agent
- leads
- etching
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 238000000034 method Methods 0.000 title claims description 8
- 238000005530 etching Methods 0.000 title claims description 4
- 230000000873 masking effect Effects 0.000 claims description 16
- 239000003795 chemical substances by application Substances 0.000 claims description 15
- 239000002966 varnish Substances 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 208000031872 Body Remains Diseases 0.000 description 1
- 101100493710 Caenorhabditis elegans bath-40 gene Proteins 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229940072049 amyl acetate Drugs 0.000 description 1
- PGMYKACGEOXYJE-UHFFFAOYSA-N anhydrous amyl acetate Natural products CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- MNWFXJYAOYHMED-UHFFFAOYSA-M heptanoate Chemical compound CCCCCCC([O-])=O MNWFXJYAOYHMED-UHFFFAOYSA-M 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL271175 | 1961-11-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1464296A1 DE1464296A1 (de) | 1968-12-05 |
| DE1464296B2 true DE1464296B2 (de) | 1971-02-25 |
Family
ID=19753400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19621464296 Pending DE1464296B2 (de) | 1961-11-08 | 1962-11-03 | Verfahren zum aetzen eines halbleiterbauelementes |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE624483A (en, 2012) |
| CH (1) | CH406442A (en, 2012) |
| DE (1) | DE1464296B2 (en, 2012) |
| ES (1) | ES282203A1 (en, 2012) |
| GB (1) | GB953829A (en, 2012) |
| NL (1) | NL271175A (en, 2012) |
| SE (1) | SE218770C1 (en, 2012) |
-
0
- BE BE624483D patent/BE624483A/xx unknown
- NL NL271175D patent/NL271175A/xx unknown
-
1962
- 1962-11-03 DE DE19621464296 patent/DE1464296B2/de active Pending
- 1962-11-05 GB GB41756/62A patent/GB953829A/en not_active Expired
- 1962-11-05 CH CH1292462A patent/CH406442A/de unknown
- 1962-11-05 SE SE1186362A patent/SE218770C1/sv unknown
- 1962-11-06 ES ES282203A patent/ES282203A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| SE218770C1 (en, 2012) | 1968-02-13 |
| DE1464296A1 (de) | 1968-12-05 |
| NL271175A (en, 2012) | |
| GB953829A (en) | 1964-04-02 |
| ES282203A1 (es) | 1963-01-16 |
| CH406442A (de) | 1966-01-31 |
| BE624483A (en, 2012) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1287009C2 (de) | Verfahren zur herstellung von halbleiterkoerpern | |
| DE2408617A1 (de) | Verfahren und vorrichtung zur kontinuierlichen und partiellen beschichtung eines metallstreifens | |
| DE840418C (de) | Verfahren zum Herstellen Stoerstellen enthaltender Halbleiter, insbesondere fuer Trockengleichrichter | |
| DE1614306B2 (de) | Verfahren zur Herstellung elektrischer Anschlüsse auf einer Oberfläche eines elektronischen Bauelementes und durch Anwendung dieses Verfahrens hergestelltes Bauelement | |
| DE1126516B (de) | Verfahren zur Herstellung von Halbleiteranordnungen mit pn-UEbergang | |
| DE1231812B (de) | Verfahren zur Herstellung von elektrischen Halbleiterbauelementen nach der Mesa-Diffusionstechnik | |
| DE829191C (de) | Halbleiter zu Gleichrichter- oder Verstaerkerzwecken | |
| DE1521414C3 (de) | Verfahren zum Aufbringen von nebeneinander liegenden, durch einen engen Zwischenraum voneinander getrennten Metallschichten auf eine Unterlage | |
| DE1614995B1 (de) | Verfahren zum Herstellen von Aluminiumkontakten an planaren Halbleiteranordnungen | |
| DE1614829B2 (de) | Verfahren zum herstellen eines halbleiterbauelementes | |
| DE1464296B2 (de) | Verfahren zum aetzen eines halbleiterbauelementes | |
| DE1464296C (de) | Verfahren zum Atzen eines Halbleiter bauelementes | |
| AT234152B (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
| DE2327878C3 (de) | Verfahren zum Ätzen von mit Elektroden versehenen Halbleiterscheiben für Halbleiterbauelemente | |
| DE1564770C3 (de) | Verfahren zum gleichzeitigen Herstellen einer Vielzahl von Halbleiteranordnungen | |
| DE1058158B (de) | Verfahren zum Anbringen einer Legierungs-Elektrode auf einem halbleitenden Koerper | |
| DE1919158A1 (de) | Verfahren zum AEtzen von Ag-Sn-Pb-Legierungen | |
| DE1194064B (de) | Verfahren zum elektrolytischen AEtzen der Ober-flaeche eines mit Legierungselektroden aus einer Bleilegierung versehenen npn-Transistors mit einem Halbleiterkoerper aus Germanium | |
| DE1614800C3 (de) | Verfahren zum Herstellen eines Planartransistors mit Tetrodeneigenschaften | |
| DE1292761B (de) | Planar-Halbleiterbauelement und Verfahren zu seiner Herstellung | |
| DE2610539A1 (de) | Halbleiterbauelement mit elektrischen kontakten und verfahren zur herstellung solcher kontakte | |
| DE1071846B (en, 2012) | ||
| DE1285625B (de) | Verfahren zur Herstellung eines Halbleiterbauelements | |
| DE1146203B (de) | Verfahren zum Abtragen von Material von einem Halbleiterkoerper eines Halbleiter-bauelementes, z. B. eines Transistors oder einer Kristalldiode, durch Einwirkung eines strahlenfoermig aufgebrachten Abtragungsmittels | |
| DE2707721C3 (de) | Verfahren zum Herstellen eines Halbleiterlasers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| SH | Request for examination between 03.10.1968 and 22.04.1971 |