DE1444530B2 - Verfahren und Vorrichtung zum Herstellen von stabförmigem, einkristallinen Halbleitermaterial - Google Patents
Verfahren und Vorrichtung zum Herstellen von stabförmigem, einkristallinen HalbleitermaterialInfo
- Publication number
- DE1444530B2 DE1444530B2 DE19621444530 DE1444530A DE1444530B2 DE 1444530 B2 DE1444530 B2 DE 1444530B2 DE 19621444530 DE19621444530 DE 19621444530 DE 1444530 A DE1444530 A DE 1444530A DE 1444530 B2 DE1444530 B2 DE 1444530B2
- Authority
- DE
- Germany
- Prior art keywords
- rod
- melt
- induction heating
- semiconductor material
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 239000013078 crystal Substances 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 20
- 239000000463 material Substances 0.000 title claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 37
- 239000000155 melt Substances 0.000 claims description 31
- 230000006698 induction Effects 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004857 zone melting Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0082820 | 1962-12-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1444530A1 DE1444530A1 (de) | 1969-04-24 |
| DE1444530B2 true DE1444530B2 (de) | 1970-10-01 |
Family
ID=7510626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19621444530 Withdrawn DE1444530B2 (de) | 1962-12-12 | 1962-12-12 | Verfahren und Vorrichtung zum Herstellen von stabförmigem, einkristallinen Halbleitermaterial |
Country Status (6)
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1519902C3 (de) * | 1966-09-24 | 1975-07-10 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
| GB1179545A (en) * | 1968-01-16 | 1970-01-28 | Siemens Ag | Apparatus for Melting a Rod of Crystalline Material Zone-by-Zone |
| US3660062A (en) * | 1968-02-29 | 1972-05-02 | Siemens Ag | Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material |
| JPS535867B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1973-03-08 | 1978-03-02 | ||
| US3996094A (en) * | 1975-01-02 | 1976-12-07 | Motorola, Inc. | Silicon manufacture |
| US3977934A (en) * | 1975-01-02 | 1976-08-31 | Motorola, Inc. | Silicon manufacture |
| GB1475261A (en) * | 1975-04-02 | 1977-06-01 | Nat Res Dev | Siliceous materials |
| US4784715A (en) * | 1975-07-09 | 1988-11-15 | Milton Stoll | Methods and apparatus for producing coherent or monolithic elements |
| US4721688A (en) * | 1986-09-18 | 1988-01-26 | Mobil Solar Energy Corporation | Method of growing crystals |
| EP0504929B1 (en) * | 1991-03-22 | 1996-08-28 | Shin-Etsu Handotai Company Limited | Method of growing silicon monocrystalline rod |
| RU182737U1 (ru) * | 2016-12-29 | 2018-08-29 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Северо-Кавказский горно-металлургический институт (государственный технологический университет)" (СКГМИ (ГТУ) | Устройство для получения высокочистого монокристалла зонной плавкой |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB775817A (en) * | 1954-03-09 | 1957-05-29 | Siemens Ag | Improvements in or relating to processes and apparatus for drawing crystalline bodies , such as semi-conductor bodies |
| DE1017795B (de) * | 1954-05-25 | 1957-10-17 | Siemens Ag | Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen |
| US2743199A (en) * | 1955-03-30 | 1956-04-24 | Westinghouse Electric Corp | Process of zone refining an elongated body of metal |
| FR1235341A (fr) * | 1958-03-05 | 1960-07-08 | Siemens Ag | Procédé et appareil de fabrication continue de tiges mono-cristallines minces |
| US3036892A (en) * | 1958-03-05 | 1962-05-29 | Siemens Ag | Production of hyper-pure monocrystal-line rods in continuous operation |
| NL251304A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1959-05-08 | |||
| NL108958C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1959-05-29 | |||
| GB911360A (en) * | 1959-10-16 | 1962-11-28 | Westinghouse Electric Corp | Process for growing crystals |
| US2992311A (en) * | 1960-09-28 | 1961-07-11 | Siemens Ag | Method and apparatus for floatingzone melting of semiconductor rods |
| SE347579B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1970-11-27 | 1972-08-07 | Aga Ab |
-
1962
- 1962-12-12 DE DE19621444530 patent/DE1444530B2/de not_active Withdrawn
-
1963
- 1963-08-19 CH CH1020763A patent/CH420072A/de unknown
- 1963-11-18 GB GB45491/63A patent/GB1029804A/en not_active Expired
- 1963-12-11 BE BE641090A patent/BE641090A/xx unknown
- 1963-12-12 JP JP38067044A patent/JPS5021431B1/ja active Pending
-
1966
- 1966-07-06 US US563301A patent/US3351433A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE1444530A1 (de) | 1969-04-24 |
| CH420072A (de) | 1966-09-15 |
| GB1029804A (en) | 1966-05-18 |
| JPS5021431B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-07-23 |
| BE641090A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1964-06-11 |
| US3351433A (en) | 1967-11-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0021385B1 (de) | Verfahren zur Herstellung von Siliciumstäben | |
| DE2654063A1 (de) | Verfahren zum herstellen eines bandes aus polykristallinem halbleitermaterial | |
| DE3316547A1 (de) | Kalter tiegel fuer das erschmelzen nichtmetallischer anorganischer verbindungen | |
| DE1444530B2 (de) | Verfahren und Vorrichtung zum Herstellen von stabförmigem, einkristallinen Halbleitermaterial | |
| DE19700516A1 (de) | Einkristall-Ziehvorrichtung | |
| CH530818A (de) | Verfahren zum Züchten von langgestreckten einkristallinen Körpern und Einrichtung zur Durchführung dieses Verfahrens | |
| DE3000762A1 (de) | Verfahren zum herstellen eines vorformlings fuer einen optischen wellenleiter | |
| DE10102126A1 (de) | Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Silicium | |
| DE3017016A1 (de) | Verfahren und vorrichtung zur herstellung von monokristallinem silicium in bandform | |
| DE1444530C (de) | Verfahren und Vorrichtung zum Her stellen von stabformigem, einkristalhnen Halbleitermaterial | |
| DE2635373C2 (de) | Verfahren und Vorrichtung zur kontinuierlichen Züchtung von Einkristallen bestimmter Form | |
| DE1218412B (de) | Verfahren zum Herstellen von einkristallinem Halbleitermaterial | |
| DE1621295C3 (de) | Verfahren und Vorrichtung zum Bedecken von Substraten durch Bedampfen | |
| DE1109141B (de) | Verfahren zur Herstellung eines einkristallinen hochgereinigten Halbleiterstabes | |
| DE2952602C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| AT223659B (de) | Verfahren zur Herstellung von versetzungsfreiem einkristallinem Silizium durch tiegelfreies Zonenschmelzen | |
| DE2306755C2 (de) | Vorrichtung zum Herstellen von Einkristallen aus am Schmelzpunkt leicht zersetzlichen halbleitenden Verbindungen | |
| DE1264399B (de) | Vorrichtung zum tiegelfreien Zonenschmelzen | |
| DE1960088C3 (de) | Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes | |
| DE1188040B (de) | Vorrichtung zum Ziehen von Halbleitereinkristallen aus einer Schmelze konstanten Volumens | |
| DE1256626B (de) | Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze | |
| DE1972928U (de) | Vorrichtung zum ziehen eines kristallinen stabes, insbesondere halbleiterstabes, aus einer schmelze. | |
| DE2234515C3 (de) | Verfahren zum Herstellen von (111)-orientierten Halbleitereinkristallstäben mit zur Stabmitte abfallendem spezifischem Widerstand | |
| DE1805971C (de) | Verfahren zum Verandern der kristal linen Struktur eines rohrförmigen Ausgangs knstalls insbesondere aus Halbleitermate rial, durch Zonenschmelzen | |
| AT211381B (de) | Vorrichtung zum tiegelfreien Zonenschmelzen eines Halbleiterstabes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |