DE1417138B2 - - Google Patents
Info
- Publication number
- DE1417138B2 DE1417138B2 DE19571417138 DE1417138A DE1417138B2 DE 1417138 B2 DE1417138 B2 DE 1417138B2 DE 19571417138 DE19571417138 DE 19571417138 DE 1417138 A DE1417138 A DE 1417138A DE 1417138 B2 DE1417138 B2 DE 1417138B2
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- heating coil
- seed crystal
- hydrogen
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010703 silicon Substances 0.000 claims description 51
- 229910052710 silicon Inorganic materials 0.000 claims description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 45
- 239000001257 hydrogen Substances 0.000 claims description 29
- 229910052739 hydrogen Inorganic materials 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 19
- 238000000354 decomposition reaction Methods 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- -1 silicon hydrogen Chemical class 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- 230000004048 modification Effects 0.000 claims description 2
- 238000012986 modification Methods 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 230000009467 reduction Effects 0.000 claims description 2
- 230000005672 electromagnetic field Effects 0.000 claims 3
- 239000002826 coolant Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 150000003376 silicon Chemical class 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052990 silicon hydride Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Lubricants (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3142556A GB826575A (en) | 1956-10-16 | 1956-10-16 | Improvements in or relating to methods of producing silicon of high purity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1417138A1 DE1417138A1 (de) | 1968-10-10 |
| DE1417138B2 true DE1417138B2 (enExample) | 1970-09-10 |
Family
ID=10322909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19571417138 Pending DE1417138A1 (de) | 1956-10-16 | 1957-10-10 | Verfahren und Vorrichtung zur Herstellung von Silicium hoher Reinheit |
Country Status (3)
| Country | Link |
|---|---|
| CH (1) | CH388918A (enExample) |
| DE (1) | DE1417138A1 (enExample) |
| GB (1) | GB826575A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2530607B1 (fr) * | 1982-07-26 | 1985-06-28 | Rhone Poulenc Spec Chim | Silicium pur, en poudre dense et son procede de preparation |
| DE102006034885A1 (de) | 2006-07-25 | 2008-08-07 | Daimlerchrysler Ag | Wasserstoff- und Energiegewinnung durch thermische Umsetzung von Silanen |
| EP3659964A1 (en) | 2018-11-28 | 2020-06-03 | Hysilabs, SAS | Catalysed process of production of hydrogen from silylated derivatives as hydrogen carrier compounds |
-
1956
- 1956-10-16 GB GB3142556A patent/GB826575A/en not_active Expired
-
1957
- 1957-10-10 DE DE19571417138 patent/DE1417138A1/de active Pending
- 1957-10-15 CH CH5159057A patent/CH388918A/de unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1417138A1 (de) | 1968-10-10 |
| GB826575A (en) | 1960-01-13 |
| CH388918A (de) | 1965-03-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0128600B1 (de) | Kalter Tiegel für das Erschmelzen und die Kristallisation nichtmetallischer anorganischer Verbindungen | |
| DE629818C (de) | Vorrichtung zum ununterbrochenen Schmelzen von Glas | |
| DE1155759B (de) | Vorrichtung zur Gewinnung reinsten kristallinen Halbleitermaterials fuer elektrotechnische Zwecke | |
| DE2059713A1 (de) | Verfahren und Vorrichtung zum Herstellen von Halbleiter-Einkristallen nach der Czochralski-Methode | |
| DE2244038C3 (de) | Verfahren und Vorrichtungen zum Herstellen von Flachglas | |
| DE2050076A1 (de) | Vorrichtung zum Herstellen von rohrförmigen Körpern aus Halbleitermaterial, vorzugsweise Silicium oder Germanium | |
| DE3814259A1 (de) | Verfahren und vorrichtung zur herstellung eines einkristalls eines verbindungshalbleiters | |
| DE2820442A1 (de) | Waermebehandlungs-vorrichtung zur verlaengerung der lebensdauer eines druckbehaelters, insbesondere eines reaktordruckbehaelters | |
| DE1458155A1 (de) | Vorrichtung zum kontinuierlichen Strangziehen von vielkristallinem Material | |
| DE3004710A1 (de) | Verfahren zum aufwachsen einer epitaktischen schicht auf einem scheibchen in einem reaktionsgefaess fuer gasphasenabscheidung | |
| DE1417138B2 (enExample) | ||
| DE2831816C2 (enExample) | ||
| DE2831819C2 (enExample) | ||
| DE1417138C (de) | Verfahren und Vorrichtung zur Herstel lung von Silicium großer Reinheit | |
| DE3325058C2 (de) | Verfahren und Vorrichtung zum epitaktischen Aufwachsen eines ZnSe-Einkristalls | |
| DE1519912B1 (de) | Verfahren zum Herstellen von versetzungsfreiem,einkristallinem Halbleitermaterial | |
| DE1644038B1 (de) | Zonenschmelzverfahren | |
| DE1417786A1 (de) | Verfahren und Vorrichtung zur Herstellung von Silizium hoher Reinheit | |
| DE2318063C3 (de) | Verfahren zur Herstellung von Aushalsungen an Hohlkörpern aus Metall und Vorrichtung zur Durchführung des Verfahrens | |
| DE1417137C (enExample) | ||
| DE1417137B2 (de) | Verfahren zur Herstellung von Silicium großer Reinheit | |
| DE2306755C2 (de) | Vorrichtung zum Herstellen von Einkristallen aus am Schmelzpunkt leicht zersetzlichen halbleitenden Verbindungen | |
| AT212879B (de) | Verfahren zur Oberflächenbehandlung von Körpern aus hochgereinigtem Halbleitermaterial | |
| DE2422077A1 (de) | Induktionsheizspule zum tiegelfreien zonenschmelzen | |
| DE102017115087B4 (de) | Vorrichtung zur Herstellung eines Gussbauteils |