DE1414955B2 - Verfahren zum herstellen einer halbleiteranordnung - Google Patents

Verfahren zum herstellen einer halbleiteranordnung

Info

Publication number
DE1414955B2
DE1414955B2 DE19611414955 DE1414955A DE1414955B2 DE 1414955 B2 DE1414955 B2 DE 1414955B2 DE 19611414955 DE19611414955 DE 19611414955 DE 1414955 A DE1414955 A DE 1414955A DE 1414955 B2 DE1414955 B2 DE 1414955B2
Authority
DE
Germany
Prior art keywords
temperature
gas stream
gas flow
impurity
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19611414955
Other languages
German (de)
English (en)
Other versions
DE1414955A1 (de
Inventor
Hermann Georg Dipl.-Phys. Dr.; Memming Rüdiger Dipl.-Phys. Dr.; 5100 Aachen; Koelmans Hein Dr. Eindhoven Grimmeiss (Niederlande)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1414955A1 publication Critical patent/DE1414955A1/de
Publication of DE1414955B2 publication Critical patent/DE1414955B2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Photovoltaic Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Light Receiving Elements (AREA)
DE19611414955 1961-07-14 1961-07-14 Verfahren zum herstellen einer halbleiteranordnung Withdrawn DE1414955B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEN0020331 1961-07-14

Publications (2)

Publication Number Publication Date
DE1414955A1 DE1414955A1 (de) 1968-10-10
DE1414955B2 true DE1414955B2 (de) 1971-08-19

Family

ID=7341257

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19611414955 Withdrawn DE1414955B2 (de) 1961-07-14 1961-07-14 Verfahren zum herstellen einer halbleiteranordnung

Country Status (7)

Country Link
US (1) US3194700A (enExample)
BE (1) BE620161A (enExample)
CH (1) CH419351A (enExample)
DE (1) DE1414955B2 (enExample)
DK (1) DK112889B (enExample)
GB (1) GB1003983A (enExample)
NL (2) NL141331B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3453154A (en) * 1966-06-17 1969-07-01 Globe Union Inc Process for establishing low zener breakdown voltages in semiconductor regulators
JPH0693441B2 (ja) * 1989-09-22 1994-11-16 株式会社東芝 半導体集積回路装置の加熱処理方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2849341A (en) * 1953-05-01 1958-08-26 Rca Corp Method for making semi-conductor devices
US2816847A (en) * 1953-11-18 1957-12-17 Bell Telephone Labor Inc Method of fabricating semiconductor signal translating devices
US2859141A (en) * 1954-04-30 1958-11-04 Raytheon Mfg Co Method for making a semiconductor junction
US2820841A (en) * 1956-05-10 1958-01-21 Clevite Corp Photovoltaic cells and methods of fabricating same
US2980560A (en) * 1957-07-29 1961-04-18 Rca Corp Methods of making semiconductor devices
US3114663A (en) * 1960-03-29 1963-12-17 Rca Corp Method of providing semiconductor wafers with protective and masking coatings

Also Published As

Publication number Publication date
DK112889B (da) 1969-01-27
DE1414955A1 (de) 1968-10-10
BE620161A (enExample)
CH419351A (de) 1966-08-31
US3194700A (en) 1965-07-13
NL280773A (enExample)
GB1003983A (en) 1965-09-08
NL141331B (nl) 1974-02-15

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Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971
E77 Valid patent as to the heymanns-index 1977
EHJ Ceased/non-payment of the annual fee