DE1303150B - - Google Patents
Info
- Publication number
- DE1303150B DE1303150B DENDAT1303150D DE1303150DA DE1303150B DE 1303150 B DE1303150 B DE 1303150B DE NDAT1303150 D DENDAT1303150 D DE NDAT1303150D DE 1303150D A DE1303150D A DE 1303150DA DE 1303150 B DE1303150 B DE 1303150B
- Authority
- DE
- Germany
- Prior art keywords
- zone
- tube
- rod
- melting
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 5
- 239000000356 contaminant Substances 0.000 claims description 3
- 238000004857 zone melting Methods 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims 1
- 230000008023 solidification Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 14
- 238000002844 melting Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- IKWTVSLWAPBBKU-UHFFFAOYSA-N a1010_sial Chemical compound O=[As]O[As]=O IKWTVSLWAPBBKU-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000413 arsenic oxide Inorganic materials 0.000 description 1
- 229960002594 arsenic trioxide Drugs 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011538 cleaning material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B41/00—Obtaining germanium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL260045 | 1961-01-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1303150B true DE1303150B (en, 2012) | 1971-05-13 |
Family
ID=19752808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DENDAT1303150D Pending DE1303150B (en, 2012) | 1961-01-13 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3210165A (en, 2012) |
| DE (1) | DE1303150B (en, 2012) |
| GB (1) | GB983004A (en, 2012) |
| NL (1) | NL260045A (en, 2012) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3876388A (en) * | 1968-10-30 | 1975-04-08 | Siemens Ag | Method of varying the crystalline structure of or the concentration of impurities contained in a tubular starting crystal or both using diagonal zone melting |
| GB1366532A (en) * | 1971-04-21 | 1974-09-11 | Nat Res Dev | Apparatus for the preparation and growth of crystalline material |
| US3796548A (en) * | 1971-09-13 | 1974-03-12 | Ibm | Boat structure in an apparatus for making semiconductor compound single crystals |
| US3961906A (en) * | 1973-11-22 | 1976-06-08 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods including oscillation dampening material |
| US3988197A (en) * | 1973-11-22 | 1976-10-26 | Siemens Aktiengesellschaft | Crucible-free zone melting of semiconductor crystal rods including oscillation dampening |
| USRE29825E (en) * | 1973-11-22 | 1978-11-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| US3996011A (en) * | 1973-11-22 | 1976-12-07 | Siemens Aktiengesellschaft | Apparatus for crucible-free zone melting of semiconductor crystal rods |
| DE2358300C3 (de) * | 1973-11-22 | 1978-07-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum senkrechten Halten eines Halbleiterkristallstabes beim tiegelfreien Zonenschmelzen |
| GB1542868A (en) * | 1975-11-14 | 1979-03-28 | Siemens Ag | Production of phosphorus-doped monocrystalline silicon rods |
| US5205997A (en) * | 1989-07-31 | 1993-04-27 | Grumman Aerospace Corporation | Ampoule for crystal growth |
| JP2685721B2 (ja) * | 1994-11-04 | 1997-12-03 | 工業技術院長 | 無粒界型マンガン酸化物系結晶体及びスイッチング型磁気抵抗素子 |
| CN103754838B (zh) * | 2014-02-08 | 2015-10-28 | 张家港绿能新材料科技有限公司 | 一种快速制备碲化镉粉末的方法和设备 |
| CN113337738A (zh) * | 2021-06-04 | 2021-09-03 | 安徽光智科技有限公司 | 锗废料回收的方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1061527B (de) * | 1953-02-14 | 1959-07-16 | Siemens Ag | Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken |
| AT207857B (de) * | 1955-01-14 | Degussa | Verfahren zur Herstellung von Blausäure durch Umsetzung von Kohlenwasserstoffen mit Ammoniak im Katalysatorbett | |
| US3092462A (en) * | 1960-01-28 | 1963-06-04 | Philips Corp | Method for the manufacture of rods of meltable material |
-
0
- NL NL260045D patent/NL260045A/xx unknown
- DE DENDAT1303150D patent/DE1303150B/de active Pending
-
1961
- 1961-12-29 US US163252A patent/US3210165A/en not_active Expired - Lifetime
-
1962
- 1962-01-10 GB GB921/62A patent/GB983004A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3210165A (en) | 1965-10-05 |
| NL260045A (en, 2012) | |
| GB983004A (en) | 1965-02-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2243181C3 (de) | Verfahren zum Herstellen epitaktischer Halbleiterschichten aus der flüssigen Phase | |
| DE1303150B (en, 2012) | ||
| DE1044768B (de) | Verfahren und Vorrichtung zum Ziehen eines stabfoermigen kristallinen Koerpers, vorzugsweise Halbleiterkoerpers | |
| DE3325242C2 (de) | Verfahren und Vorrichtung zum Ziehen eines Verbindungshalbleiter-Einkristalls | |
| DE2305019B2 (de) | Verfahren und Vorrichtung zum epitaktischen Aufwachsen von Halbleiterschichten mittels Flüssigphasen-Epitaxie | |
| DE3206622A1 (de) | Verfahren und vorrichtung zum aufbringen eines materials auf ein substrat | |
| DE1257104B (de) | Vorrichtung zum tiegellosen Zonenschmelzen | |
| DE1519837B2 (de) | Verfahren zum zonenschmelzen oder kristallziehen | |
| DE3523090A1 (de) | Verfahren und vorrichtung zum aufbringen von schutzbeschichtungen auf quarztiegel | |
| DE1913565B2 (de) | Verfahren zur Herstellung eines Kristalls einer halbleitenden A"1 Bv -Verbindung | |
| DE1118172B (de) | Verfahren zur Behandlung von Silicium | |
| DE1150357B (de) | Vorrichtung zum Reinigen von Kristallen, insbesondere von Halbleitereinkristallen, durch Zonenschmelzen | |
| DE1230911B (de) | Verfahren zum Aufschmelzen wenigstens eines Kontaktes auf einen Halbleiterkoerper und Vorrichtung zur Durchfuehrung dieses Verfahrens | |
| DE2358300A1 (de) | Verfahren und vorrichtung zum tiegelfreien zonenschmelzen eines halbleiterkristallstabes | |
| DE2000096A1 (de) | Verfahren und Vorrichtung zum epitaktischen Anbringen einer Halbleitermaterialschicht auf einer flachen Seite eines einkristallinen Substrats und Produkt,insbesondere Halbleiterbauelement,das durch dieses Verfahren hergestellt ist | |
| DE2632614A1 (de) | Vorrichtung zum ziehen eines einkristallinen koerpers aus einem schmelzfilm | |
| DE1023023B (de) | Verfahren zum Reinigen von Silicium | |
| DE2306755C2 (de) | Vorrichtung zum Herstellen von Einkristallen aus am Schmelzpunkt leicht zersetzlichen halbleitenden Verbindungen | |
| DE1170913B (de) | Verfahren zur Herstellung von kristallinem Silicium in Stabform | |
| DE2060673C3 (de) | Vorrichtung zur Herstellung von Phosphiden | |
| DE1946049C3 (de) | Verfahren und Vorrichtung zur Flüssigphasenepitaxie | |
| AT206477B (de) | Verfahren zur Herstellung von reinem Silizium | |
| DE1160192B (de) | Verfahren zur Erzeugung von Schwefel enthaltendem Gold | |
| DE1442795C3 (de) | Verfahren zum Kristallisieren, Reinigen und/oder Dotieren eines Materials durch Wärmebehandlung im Dampf eines aktiven Elementes | |
| DE1913682C3 (de) | Vorrichtung zum Herstellen von Einkristallen aus halbleitenden Verbindungen |