DE1297762B - Sperrschicht-Feldeffekttransistor - Google Patents

Sperrschicht-Feldeffekttransistor

Info

Publication number
DE1297762B
DE1297762B DEM65260A DEM0065260A DE1297762B DE 1297762 B DE1297762 B DE 1297762B DE M65260 A DEM65260 A DE M65260A DE M0065260 A DEM0065260 A DE M0065260A DE 1297762 B DE1297762 B DE 1297762B
Authority
DE
Germany
Prior art keywords
zone
field effect
layer
effect transistor
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEM65260A
Other languages
German (de)
English (en)
Inventor
Lesk Israel Arnold
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE1297762B publication Critical patent/DE1297762B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/162—Testing steps

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
DEM65260A 1964-05-18 1965-05-15 Sperrschicht-Feldeffekttransistor Pending DE1297762B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36821264A 1964-05-18 1964-05-18
US65526567A 1967-07-09 1967-07-09

Publications (1)

Publication Number Publication Date
DE1297762B true DE1297762B (de) 1969-06-19

Family

ID=27004089

Family Applications (1)

Application Number Title Priority Date Filing Date
DEM65260A Pending DE1297762B (de) 1964-05-18 1965-05-15 Sperrschicht-Feldeffekttransistor

Country Status (7)

Country Link
US (1) US3578514A (enExample)
JP (1) JPS4838989B1 (enExample)
CH (1) CH427046A (enExample)
DE (1) DE1297762B (enExample)
GB (1) GB1053442A (enExample)
NL (1) NL6506256A (enExample)
SE (1) SE320129B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3760492A (en) * 1969-05-22 1973-09-25 S Middelhoek Procedure for making semiconductor devices of small dimensions
USRE29971E (en) * 1971-07-31 1979-04-17 Zaidan Hojin Hondotai Kenkyn Shinkokai Field effect semiconductor device having an unsaturated triode vacuum tube characteristic
JPS5217720B1 (enExample) * 1971-07-31 1977-05-17
JPS49105490A (enExample) * 1973-02-07 1974-10-05
JPS524426B2 (enExample) * 1973-04-20 1977-02-03
US3947866A (en) * 1973-06-25 1976-03-30 Signetics Corporation Ion implanted resistor having controlled temperature coefficient and method
US3971055A (en) * 1973-06-26 1976-07-20 Sony Corporation Analog memory circuit utilizing a field effect transistor for signal storage
CA1049127A (en) * 1974-03-05 1979-02-20 Kunio Itoh Semiconductor devices with improved heat radiation and current concentration
FR2708144A1 (fr) * 1993-07-22 1995-01-27 Philips Composants Dispositif intégré associant un transistor bipolaire à un transistor à effet de champ.
US8399995B2 (en) * 2009-01-16 2013-03-19 Infineon Technologies Ag Semiconductor device including single circuit element for soldering
CN103280409A (zh) * 2013-05-15 2013-09-04 电子科技大学 一种结型场效应晶体管的制造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE968911C (de) * 1949-06-14 1958-04-10 Licentia Gmbh Elektrisch steuerbarer Trockengleichrichter und Verfahren zu seiner Herstellung

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE968911C (de) * 1949-06-14 1958-04-10 Licentia Gmbh Elektrisch steuerbarer Trockengleichrichter und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
US3578514A (en) 1971-05-11
SE320129B (enExample) 1970-02-02
NL6506256A (enExample) 1965-11-19
CH427046A (fr) 1966-12-31
GB1053442A (enExample)
JPS4838989B1 (enExample) 1973-11-21

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