DE1288198B - Verfahren zum Herstellen eines Transistors mit einem heterogenen Zonenuebergang und mit einem Driftfeld - Google Patents
Verfahren zum Herstellen eines Transistors mit einem heterogenen Zonenuebergang und mit einem DriftfeldInfo
- Publication number
- DE1288198B DE1288198B DEI29029A DEI0029029A DE1288198B DE 1288198 B DE1288198 B DE 1288198B DE I29029 A DEI29029 A DE I29029A DE I0029029 A DEI0029029 A DE I0029029A DE 1288198 B DE1288198 B DE 1288198B
- Authority
- DE
- Germany
- Prior art keywords
- zone
- transistor
- emitter
- germanium
- band gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 230000007704 transition Effects 0.000 title description 15
- 229910052732 germanium Inorganic materials 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 21
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 12
- 229910005540 GaP Inorganic materials 0.000 claims description 8
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910000765 intermetallic Inorganic materials 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000000523 sample Substances 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/059—Germanium on silicon or Ge-Si on III-V
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US398540A US3366517A (en) | 1964-09-23 | 1964-09-23 | Formation of semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1288198B true DE1288198B (de) | 1969-01-30 |
Family
ID=23575772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEI29029A Pending DE1288198B (de) | 1964-09-23 | 1965-09-21 | Verfahren zum Herstellen eines Transistors mit einem heterogenen Zonenuebergang und mit einem Driftfeld |
Country Status (6)
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4588451A (en) * | 1984-04-27 | 1986-05-13 | Advanced Energy Fund Limited Partnership | Metal organic chemical vapor deposition of 111-v compounds on silicon |
| US4551394A (en) * | 1984-11-26 | 1985-11-05 | Honeywell Inc. | Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1077788B (de) * | 1957-09-24 | 1960-03-17 | Ibm Deutschland | Halbleiteranordnung mit mindestens einem PN-UEbergang und einem Driftfeld |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2929859A (en) * | 1957-03-12 | 1960-03-22 | Rca Corp | Semiconductor devices |
| US2974262A (en) * | 1957-06-11 | 1961-03-07 | Abraham George | Solid state device and method of making same |
| US3132057A (en) * | 1959-01-29 | 1964-05-05 | Raytheon Co | Graded energy gap semiconductive device |
| US3089794A (en) * | 1959-06-30 | 1963-05-14 | Ibm | Fabrication of pn junctions by deposition followed by diffusion |
| US3095324A (en) * | 1960-04-14 | 1963-06-25 | Gen Electric | Method for making electrically conducting films and article |
| NL268758A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1960-09-20 | |||
| US3234057A (en) * | 1961-06-23 | 1966-02-08 | Ibm | Semiconductor heterojunction device |
| US3145125A (en) * | 1961-07-10 | 1964-08-18 | Ibm | Method of synthesizing iii-v compound semiconductor epitaxial layers having a specified conductivity type without impurity additions |
-
1964
- 1964-09-23 US US398540A patent/US3366517A/en not_active Expired - Lifetime
-
1965
- 1965-08-24 GB GB36418/65A patent/GB1045108A/en not_active Expired
- 1965-09-16 NL NL6512036A patent/NL6512036A/xx unknown
- 1965-09-21 DE DEI29029A patent/DE1288198B/de active Pending
- 1965-09-22 CH CH1311965A patent/CH438495A/de unknown
- 1965-09-23 SE SE12332/65A patent/SE325081B/xx unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1077788B (de) * | 1957-09-24 | 1960-03-17 | Ibm Deutschland | Halbleiteranordnung mit mindestens einem PN-UEbergang und einem Driftfeld |
Also Published As
| Publication number | Publication date |
|---|---|
| CH438495A (de) | 1967-06-30 |
| NL6512036A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1966-03-24 |
| US3366517A (en) | 1968-01-30 |
| GB1045108A (en) | 1966-10-05 |
| SE325081B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-06-22 |
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