CH438495A - Verfahren zum Herstellen von Halbleiterbauelementen mit einem Driftfeld - Google Patents

Verfahren zum Herstellen von Halbleiterbauelementen mit einem Driftfeld

Info

Publication number
CH438495A
CH438495A CH1311965A CH1311965A CH438495A CH 438495 A CH438495 A CH 438495A CH 1311965 A CH1311965 A CH 1311965A CH 1311965 A CH1311965 A CH 1311965A CH 438495 A CH438495 A CH 438495A
Authority
CH
Switzerland
Prior art keywords
semiconductor components
manufacturing semiconductor
drift field
drift
field
Prior art date
Application number
CH1311965A
Other languages
English (en)
Inventor
Nien Yu Hwa
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH438495A publication Critical patent/CH438495A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02579P-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02387Group 13/15 materials
    • H01L21/02395Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/059Germanium on silicon or Ge-Si on III-V

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
CH1311965A 1964-09-23 1965-09-22 Verfahren zum Herstellen von Halbleiterbauelementen mit einem Driftfeld CH438495A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US398540A US3366517A (en) 1964-09-23 1964-09-23 Formation of semiconductor devices

Publications (1)

Publication Number Publication Date
CH438495A true CH438495A (de) 1967-06-30

Family

ID=23575772

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1311965A CH438495A (de) 1964-09-23 1965-09-22 Verfahren zum Herstellen von Halbleiterbauelementen mit einem Driftfeld

Country Status (6)

Country Link
US (1) US3366517A (de)
CH (1) CH438495A (de)
DE (1) DE1288198B (de)
GB (1) GB1045108A (de)
NL (1) NL6512036A (de)
SE (1) SE325081B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4588451A (en) * 1984-04-27 1986-05-13 Advanced Energy Fund Limited Partnership Metal organic chemical vapor deposition of 111-v compounds on silicon
US4551394A (en) * 1984-11-26 1985-11-05 Honeywell Inc. Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2929859A (en) * 1957-03-12 1960-03-22 Rca Corp Semiconductor devices
US2974262A (en) * 1957-06-11 1961-03-07 Abraham George Solid state device and method of making same
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
US3132057A (en) * 1959-01-29 1964-05-05 Raytheon Co Graded energy gap semiconductive device
US3089794A (en) * 1959-06-30 1963-05-14 Ibm Fabrication of pn junctions by deposition followed by diffusion
US3095324A (en) * 1960-04-14 1963-06-25 Gen Electric Method for making electrically conducting films and article
NL268758A (de) * 1960-09-20
US3234057A (en) * 1961-06-23 1966-02-08 Ibm Semiconductor heterojunction device
US3145125A (en) * 1961-07-10 1964-08-18 Ibm Method of synthesizing iii-v compound semiconductor epitaxial layers having a specified conductivity type without impurity additions

Also Published As

Publication number Publication date
DE1288198B (de) 1969-01-30
US3366517A (en) 1968-01-30
NL6512036A (de) 1966-03-24
GB1045108A (en) 1966-10-05
SE325081B (de) 1970-06-22

Similar Documents

Publication Publication Date Title
CH439501A (de) Verfahren zum Kontaktieren von Halbleiteranordnungen
CH407338A (de) Verfahren zum Kontaktieren von Halbleiterbauelementen
CH480168A (de) Verfahren zum Verformen von Faserplatten
CH482746A (de) Verfahren zum Stabilisieren von Polyolefinen
AT278906B (de) Verfahren zum Herstellen von Halbleiterbauelementen mit Kontakten
CH441510A (de) Verfahren zum Herstellen eines Halbleiterstromtores vom pnpn-Typ
CH447393A (de) Verfahren zum Herstellen von Feldeffekttransistoren
CH453687A (de) Verfahren zum Härten von Polyepoxyden
CH491163A (de) Verfahren zum Stabilisieren von Polyacetalen
CH445649A (de) Verfahren zum Herstellen von Halbleiterschaltungen
AT258364B (de) Verfahren zum Herstellen von Halbleiteranordnungen
AT255136B (de) Verfahren zum Härten von Epoxydverbindungen mit tertiären Aminen
DE1800347B2 (de) Verfahren zum herstellen einer halbleiteranordnung
AT262381B (de) Verfahren zum Herstellen von Halbleiterschaltungen
AT254947B (de) Verfahren zum Serienfertigen von Halbleiterbauelementen
CH444828A (de) Verfahren zum Herstellen von Halbleiterbauelementen
CH446537A (de) Verfahren zum Herstellen von Halbleiterbauelementen
CH438495A (de) Verfahren zum Herstellen von Halbleiterbauelementen mit einem Driftfeld
CH468721A (de) Verfahren zum gleichzeitigen Herstellen einer Vielzahl von Halbleiterbauelementen
AT255770B (de) Verfahren zum Härten von Epoxydverbindungen mit tertiären Aminen
CH468157A (de) Verfahren zum Herstellen von Präparaten mit Rindfleischgeschmack
CH476053A (de) Verfahren zum Härten von Epoxydverbindungen
AT259016B (de) Verfahren zum Herstellen von Halbleiteranordnungen
CH527490A (de) Verfahren zum Herstellen von CdS-Photowiderständen
AT292786B (de) Verfahren zum herstellen einer halbleiteranordnung