NL6512036A - - Google Patents

Info

Publication number
NL6512036A
NL6512036A NL6512036A NL6512036A NL6512036A NL 6512036 A NL6512036 A NL 6512036A NL 6512036 A NL6512036 A NL 6512036A NL 6512036 A NL6512036 A NL 6512036A NL 6512036 A NL6512036 A NL 6512036A
Authority
NL
Netherlands
Application number
NL6512036A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6512036A publication Critical patent/NL6512036A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02579P-type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02387Group 13/15 materials
    • H01L21/02395Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/059Germanium on silicon or Ge-Si on III-V

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
NL6512036A 1964-09-23 1965-09-16 NL6512036A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US398540A US3366517A (en) 1964-09-23 1964-09-23 Formation of semiconductor devices

Publications (1)

Publication Number Publication Date
NL6512036A true NL6512036A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1966-03-24

Family

ID=23575772

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6512036A NL6512036A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1964-09-23 1965-09-16

Country Status (6)

Country Link
US (1) US3366517A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH438495A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1288198B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1045108A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL6512036A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE325081B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4588451A (en) * 1984-04-27 1986-05-13 Advanced Energy Fund Limited Partnership Metal organic chemical vapor deposition of 111-v compounds on silicon
US4551394A (en) * 1984-11-26 1985-11-05 Honeywell Inc. Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2929859A (en) * 1957-03-12 1960-03-22 Rca Corp Semiconductor devices
US2974262A (en) * 1957-06-11 1961-03-07 Abraham George Solid state device and method of making same
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
US3132057A (en) * 1959-01-29 1964-05-05 Raytheon Co Graded energy gap semiconductive device
US3089794A (en) * 1959-06-30 1963-05-14 Ibm Fabrication of pn junctions by deposition followed by diffusion
US3095324A (en) * 1960-04-14 1963-06-25 Gen Electric Method for making electrically conducting films and article
NL268758A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1960-09-20
US3234057A (en) * 1961-06-23 1966-02-08 Ibm Semiconductor heterojunction device
US3145125A (en) * 1961-07-10 1964-08-18 Ibm Method of synthesizing iii-v compound semiconductor epitaxial layers having a specified conductivity type without impurity additions

Also Published As

Publication number Publication date
SE325081B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1970-06-22
US3366517A (en) 1968-01-30
DE1288198B (de) 1969-01-30
GB1045108A (en) 1966-10-05
CH438495A (de) 1967-06-30

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