DE1263197B - Verfahren zur Herstellung eines sperrschichtfreien elektronischen Festkoerperschaltelements und danach hergestelltes Element - Google Patents

Verfahren zur Herstellung eines sperrschichtfreien elektronischen Festkoerperschaltelements und danach hergestelltes Element

Info

Publication number
DE1263197B
DE1263197B DED44895A DED0044895A DE1263197B DE 1263197 B DE1263197 B DE 1263197B DE D44895 A DED44895 A DE D44895A DE D0044895 A DED0044895 A DE D0044895A DE 1263197 B DE1263197 B DE 1263197B
Authority
DE
Germany
Prior art keywords
solid
switching element
electrodes
state switching
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DED44895A
Other languages
German (de)
English (en)
Inventor
Mogens Dyre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Danfoss AS
Original Assignee
Danfoss AS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss AS filed Critical Danfoss AS
Priority to DED44895A priority Critical patent/DE1263197B/de
Priority to CH837565A priority patent/CH434484A/de
Priority to FR22569A priority patent/FR1441010A/fr
Priority to NL6508335A priority patent/NL6508335A/xx
Priority to GB27709/65A priority patent/GB1101094A/en
Publication of DE1263197B publication Critical patent/DE1263197B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulators (AREA)
  • Physical Vapour Deposition (AREA)
DED44895A 1964-07-04 1964-07-04 Verfahren zur Herstellung eines sperrschichtfreien elektronischen Festkoerperschaltelements und danach hergestelltes Element Pending DE1263197B (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DED44895A DE1263197B (de) 1964-07-04 1964-07-04 Verfahren zur Herstellung eines sperrschichtfreien elektronischen Festkoerperschaltelements und danach hergestelltes Element
CH837565A CH434484A (de) 1964-07-04 1965-06-12 Kontaktanordnung für Festkörperschalter
FR22569A FR1441010A (fr) 1964-07-04 1965-06-28 Perfectionnements aux dispositifs de contact pour semi-conducteurs
NL6508335A NL6508335A (it) 1964-07-04 1965-06-29
GB27709/65A GB1101094A (en) 1964-07-04 1965-06-30 A contact arrangement for a junctionless non-rectifying solid state switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DED44895A DE1263197B (de) 1964-07-04 1964-07-04 Verfahren zur Herstellung eines sperrschichtfreien elektronischen Festkoerperschaltelements und danach hergestelltes Element

Publications (1)

Publication Number Publication Date
DE1263197B true DE1263197B (de) 1968-03-14

Family

ID=7048628

Family Applications (1)

Application Number Title Priority Date Filing Date
DED44895A Pending DE1263197B (de) 1964-07-04 1964-07-04 Verfahren zur Herstellung eines sperrschichtfreien elektronischen Festkoerperschaltelements und danach hergestelltes Element

Country Status (5)

Country Link
CH (1) CH434484A (it)
DE (1) DE1263197B (it)
FR (1) FR1441010A (it)
GB (1) GB1101094A (it)
NL (1) NL6508335A (it)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB579218A (en) * 1943-07-09 1946-07-26 Standard Telephones Cables Ltd Rectifiers and method of making same
DE860973C (de) * 1944-08-21 1952-12-29 Siemens Ag Detektor
DE970899C (de) * 1948-10-02 1958-11-13 Siemens Ag Zweischichten-Trockengleichrichter
DE1079212B (de) * 1958-06-30 1960-04-07 Siemens Ag Halbleiteranordnung mit teilweise negativer Stromspannungscharakteristik, insbesondere Schaltdiode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB579218A (en) * 1943-07-09 1946-07-26 Standard Telephones Cables Ltd Rectifiers and method of making same
DE860973C (de) * 1944-08-21 1952-12-29 Siemens Ag Detektor
DE970899C (de) * 1948-10-02 1958-11-13 Siemens Ag Zweischichten-Trockengleichrichter
DE1079212B (de) * 1958-06-30 1960-04-07 Siemens Ag Halbleiteranordnung mit teilweise negativer Stromspannungscharakteristik, insbesondere Schaltdiode

Also Published As

Publication number Publication date
FR1441010A (fr) 1966-06-03
NL6508335A (it) 1966-01-05
CH434484A (de) 1967-04-30
GB1101094A (en) 1968-01-31

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