DE1256202B - Verfahren zum Herstellen homogener stabfoermiger Kristalle aus einer Schmelze - Google Patents
Verfahren zum Herstellen homogener stabfoermiger Kristalle aus einer SchmelzeInfo
- Publication number
- DE1256202B DE1256202B DEN18903A DEN0018903A DE1256202B DE 1256202 B DE1256202 B DE 1256202B DE N18903 A DEN18903 A DE N18903A DE N0018903 A DEN0018903 A DE N0018903A DE 1256202 B DE1256202 B DE 1256202B
- Authority
- DE
- Germany
- Prior art keywords
- crystal
- crucible
- growing
- rod
- directions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims description 54
- 239000000155 melt Substances 0.000 title claims description 8
- 238000000034 method Methods 0.000 title claims 4
- 230000008018 melting Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 230000006911 nucleation Effects 0.000 claims description 5
- 238000010899 nucleation Methods 0.000 claims description 5
- 238000004857 zone melting Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910002804 graphite Inorganic materials 0.000 claims 2
- 239000010439 graphite Substances 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL243511 | 1959-09-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1256202B true DE1256202B (de) | 1967-12-14 |
Family
ID=19751930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN18903A Pending DE1256202B (de) | 1959-09-18 | 1960-09-14 | Verfahren zum Herstellen homogener stabfoermiger Kristalle aus einer Schmelze |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3194691A (instruction) |
| DE (1) | DE1256202B (instruction) |
| GB (1) | GB931992A (instruction) |
| NL (2) | NL243511A (instruction) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2109874A1 (de) * | 1970-03-02 | 1971-09-16 | Hitachi Ltd | Halbleitereinrichtung mit einem monokristallinen Siliziumkoerper |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE635380A (instruction) * | 1962-07-24 | |||
| GB1060474A (en) * | 1963-03-27 | 1967-03-01 | Siemens Ag | The production of monocrystalline semiconductor bodies of silicon or germanium |
| DE1251721B (de) * | 1963-10-28 | 1967-10-12 | Siemens Aktiengesellschaft, Berlin und München München | Verfahren zum Herstellen von Halbleiteiknstallen vorzugsweise Halbleiteremknstallen mit einstellbarer, beispielsweise konstanter Fremdstoffkonzentration |
| US3329884A (en) * | 1964-06-08 | 1967-07-04 | Bell Telephone Labor Inc | Frequency multiplier utilizing a hybrid junction to provide isolation between the input and output terminals |
| DE1619994B2 (de) * | 1967-03-09 | 1976-07-15 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum zuechten eines stabfoermigen, versetzungsfreien einkristalls aus silicium durch tiegelfreies zonenschmelzen |
| US3776703A (en) * | 1970-11-30 | 1973-12-04 | Texas Instruments Inc | Method of growing 1-0-0 orientation high perfection single crystal silicon by adjusting a focus coil |
| IT943198B (it) * | 1970-12-11 | 1973-04-02 | Philips Nv | Procedimento per la fabbricazione di monocristalli semiconduttori |
| JPS5027480B1 (instruction) * | 1971-07-28 | 1975-09-08 | ||
| DE2234512C3 (de) * | 1972-07-13 | 1979-04-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von (Umorientierten Halbleitereinkristallstäben mit zur Stabmitte abtauendem spezifischem Widerstand |
| JPS6379790A (ja) * | 1986-09-22 | 1988-04-09 | Toshiba Corp | 結晶引上げ装置 |
| US5069743A (en) * | 1990-04-11 | 1991-12-03 | Hughes Aircraft Company | Orientation control of float-zone grown TiC crystals |
| JPH042683A (ja) * | 1990-04-16 | 1992-01-07 | Chichibu Cement Co Ltd | ルチル単結晶の製造方法 |
| DE4323793A1 (de) * | 1993-07-15 | 1995-01-19 | Wacker Chemitronic | Verfahren zur Herstellung von Stäben oder Blöcken aus beim Erstarren sich ausdehnendem Halbleitermaterial durch Kristallisieren einer aus Granulat erzeugten Schmelze sowie Vorrichtung zu seiner Durchführung |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2651831A (en) * | 1950-07-24 | 1953-09-15 | Bell Telephone Labor Inc | Semiconductor translating device |
| US3018539A (en) * | 1956-11-06 | 1962-01-30 | Motorola Inc | Diffused base transistor and method of making same |
| US2981875A (en) * | 1957-10-07 | 1961-04-25 | Motorola Inc | Semiconductor device and method of making the same |
-
0
- NL NL104644D patent/NL104644C/xx active
- NL NL243511D patent/NL243511A/xx unknown
-
1960
- 1960-09-02 US US53692A patent/US3194691A/en not_active Expired - Lifetime
- 1960-09-14 DE DEN18903A patent/DE1256202B/de active Pending
- 1960-09-15 GB GB31807/60A patent/GB931992A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2109874A1 (de) * | 1970-03-02 | 1971-09-16 | Hitachi Ltd | Halbleitereinrichtung mit einem monokristallinen Siliziumkoerper |
Also Published As
| Publication number | Publication date |
|---|---|
| US3194691A (en) | 1965-07-13 |
| NL104644C (instruction) | |
| NL243511A (instruction) | |
| GB931992A (en) | 1963-07-24 |
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