DE1251294B - Ernest Denicke KoIb New Providence, N J , Robert Alfred Iaudise Berkeley Heights N] (V St A ) I Verfahren zum Zuchten von Zink oxyd Einkristallen - Google Patents

Ernest Denicke KoIb New Providence, N J , Robert Alfred Iaudise Berkeley Heights N] (V St A ) I Verfahren zum Zuchten von Zink oxyd Einkristallen

Info

Publication number
DE1251294B
DE1251294B DENDAT1251294D DE1251294DA DE1251294B DE 1251294 B DE1251294 B DE 1251294B DE NDAT1251294 D DENDAT1251294 D DE NDAT1251294D DE 1251294D A DE1251294D A DE 1251294DA DE 1251294 B DE1251294 B DE 1251294B
Authority
DE
Germany
Prior art keywords
growth
zinc oxide
temperature
single crystals
autoclave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DENDAT1251294D
Other languages
German (de)
English (en)
Inventor
N Anthony Joseph Caporaso Summit
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of DE1251294B publication Critical patent/DE1251294B/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/02—Oxides; Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1096—Apparatus for crystallization from liquid or supercritical state including pressurized crystallization means [e.g., hydrothermal]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DENDAT1251294D 1963-03-27 Ernest Denicke KoIb New Providence, N J , Robert Alfred Iaudise Berkeley Heights N] (V St A ) I Verfahren zum Zuchten von Zink oxyd Einkristallen Pending DE1251294B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US268326A US3201209A (en) 1963-03-27 1963-03-27 Hydrothermal growth of zinc oxide crystals

Publications (1)

Publication Number Publication Date
DE1251294B true DE1251294B (de) 1967-10-05

Family

ID=23022470

Family Applications (1)

Application Number Title Priority Date Filing Date
DENDAT1251294D Pending DE1251294B (de) 1963-03-27 Ernest Denicke KoIb New Providence, N J , Robert Alfred Iaudise Berkeley Heights N] (V St A ) I Verfahren zum Zuchten von Zink oxyd Einkristallen

Country Status (5)

Country Link
US (1) US3201209A (US08088918-20120103-C00476.png)
BE (1) BE645214A (US08088918-20120103-C00476.png)
DE (1) DE1251294B (US08088918-20120103-C00476.png)
GB (1) GB1061831A (US08088918-20120103-C00476.png)
NL (1) NL6401340A (US08088918-20120103-C00476.png)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3377209A (en) * 1964-05-01 1968-04-09 Ca Nat Research Council Method of making p-n junctions by hydrothermally growing
US3271114A (en) * 1964-06-15 1966-09-06 Bell Telephone Labor Inc Crystal growth container
US3353926A (en) * 1965-09-29 1967-11-21 Bell Telephone Labor Inc Hydrothermal growth of zinc oxide crystals with ammonium ion additives
US3440025A (en) * 1966-06-20 1969-04-22 Bell Telephone Labor Inc Hydrothermal growth of potassium tantalate-potassium niobate mixed crystals and material so produced
US3615264A (en) * 1967-12-21 1971-10-26 Owens Illinois Inc Hydrothermal method of growing zinc oxide crystals
US4579622A (en) * 1983-10-17 1986-04-01 At&T Bell Laboratories Hydrothermal crystal growth processes
US4961823A (en) * 1985-11-12 1990-10-09 Shinichi Hirano Method of manufacturing calcium carbonate single crystal
JPS62113798A (ja) * 1985-11-12 1987-05-25 Shinichi Hirano 炭酸カルシユウム単結晶の製造方法
US4654111A (en) * 1985-12-02 1987-03-31 At&T Laboratories Hydrothermal growth of potassium titanyl phosphate
US7316746B2 (en) * 2005-03-18 2008-01-08 General Electric Company Crystals for a semiconductor radiation detector and method for making the crystals
JP2010053017A (ja) 2008-04-04 2010-03-11 Fukuda Crystal Laboratory 酸化亜鉛単結晶およびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2508208A (en) * 1945-10-31 1950-05-16 Hazeltine Research Inc Method of producing quartz crystal
US2697737A (en) * 1954-03-31 1954-12-21 Monroe B Goldberg Rechargeable cadmium dry cell

Also Published As

Publication number Publication date
US3201209A (en) 1965-08-17
GB1061831A (en) 1967-03-15
NL6401340A (US08088918-20120103-C00476.png) 1964-09-28
BE645214A (US08088918-20120103-C00476.png) 1964-07-01

Similar Documents

Publication Publication Date Title
DE1251294B (de) Ernest Denicke KoIb New Providence, N J , Robert Alfred Iaudise Berkeley Heights N] (V St A ) I Verfahren zum Zuchten von Zink oxyd Einkristallen
DE69120326T2 (de) Verfahren zur Herstellung eines Siliziumeinkristalles
EP2742160B1 (de) Verwendung einer kupferlegierung zur aufzucht von meerestieren
DE2907179A1 (de) Verfahren zur herstellung einer elektrode
DE1034772B (de) Verfahren zum Ziehen von spannungsfreien Einkristallen fast konstanter Aktivatorkonzentration aus einer Halbleiterschmelze
DE112018002156T5 (de) Verfahren zur Herstellung eines Silicium-Einkristalls vom n-Typ, Silicium-Einkristall-Ingot vom n-Typ, Siliciumwafer und epitaktischer Siliciumwafer
DE112009000328T5 (de) Verfahren zum Aufwachsen eines Siliziumcarbideinkristalls
DE112018001896T5 (de) Wärmeabschirmbauteil, Einkristall-Ziehvorrichtung und Verfahren zur Herstellung eines Silicium-Einkristall-Ingots
DE19514412C2 (de) Doppeltiegel zum Aufwachsen eines Silizium-Einkristalls
DE112014005529T5 (de) Verfahren zum Züchten eines Silizium-Einkristalls
DE69009831T2 (de) Verfahren zur Züchtung eines Einkristalls.
DE1231437C2 (de) Verfahren zur Gewinnung von sehr reinem Nickelpulver
DE2233259C3 (de) Verfahren zur Züchtung von Einkristalls
DE2646881A1 (de) Verfahren zur galvanisierung
DE2814364A1 (de) Verfahren zur elektrolytischen niederschlagung von mangan
DE1941968B2 (de) Verfahren und vorrichtung zur herstellung von einkristallen
DE2407091A1 (de) Verfahren zur herstellung feiner drahtgitter
DE2632614A1 (de) Vorrichtung zum ziehen eines einkristallinen koerpers aus einem schmelzfilm
DE2508651A1 (de) Verfahren zur herstellung von koerpern aus einem schmelzbaren kristallinen material, insbesondere halbleitermaterial, bei dem ein ununterbrochenes band aus diesem kristallinen material hergestellt wird, und durch dieses verfahren hergestellter koerper
DE3042881A1 (de) Verfahren zur herstellung von hydratisiertem eisenoxid
DE2213131A1 (de) Kobalthaltiges Magnetpulver und Verfahren zu dessen Herstellung
DE112018006080T5 (de) Silicium-Einkristall, Verfahren zur Herstellung desselben, sowie Siliciumwafer
DE698478C (de) genem Bleipulver
DE666148C (de) Herstellung zusammengesetzter Titanpigmente
DE1004154B (de) Verfahren zur kontinuierlichen Gewinnung von Urantetrafluorid aus waessriger Loesung