DE1236668B - Silizium-Halbleiterdiode zum Nachweis von Alphateilchen - Google Patents
Silizium-Halbleiterdiode zum Nachweis von AlphateilchenInfo
- Publication number
- DE1236668B DE1236668B DEC26161A DEC0026161A DE1236668B DE 1236668 B DE1236668 B DE 1236668B DE C26161 A DEC26161 A DE C26161A DE C0026161 A DEC0026161 A DE C0026161A DE 1236668 B DE1236668 B DE 1236668B
- Authority
- DE
- Germany
- Prior art keywords
- opening
- thin layer
- housing
- silicon wafer
- attached
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 17
- 229910052710 silicon Inorganic materials 0.000 title claims description 17
- 239000010703 silicon Substances 0.000 title claims description 17
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 239000002245 particle Substances 0.000 title claims description 8
- 238000001514 detection method Methods 0.000 title claims description 4
- 239000000463 material Substances 0.000 claims description 9
- 239000004033 plastic Substances 0.000 claims description 6
- 229920003023 plastic Polymers 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012080 ambient air Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004347 surface barrier Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
- H10F30/2955—Shallow PN junction radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR852622A FR1288817A (fr) | 1961-02-14 | 1961-02-14 | Diode à jonction semi-conductrice destinée à la détection de particules alpha |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1236668B true DE1236668B (de) | 1967-03-16 |
Family
ID=8748762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEC26161A Pending DE1236668B (de) | 1961-02-14 | 1962-02-03 | Silizium-Halbleiterdiode zum Nachweis von Alphateilchen |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE613282A (enrdf_load_stackoverflow) |
| DE (1) | DE1236668B (enrdf_load_stackoverflow) |
| FR (1) | FR1288817A (enrdf_load_stackoverflow) |
| NL (1) | NL274771A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1764066B1 (de) * | 1967-03-29 | 1971-08-05 | Lenia Fisitscheskij I Im P N L | Kernstrahlungsdetektor aus Diamant und Verfahren zu dessen Herstellung |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1061451B (de) * | 1957-10-31 | 1959-07-16 | Siemens Reiniger Werke Ag | Roentgenstrahlenmesser |
-
0
- NL NL274771D patent/NL274771A/xx unknown
-
1961
- 1961-02-14 FR FR852622A patent/FR1288817A/fr not_active Expired
-
1962
- 1962-01-30 BE BE613282A patent/BE613282A/fr unknown
- 1962-02-03 DE DEC26161A patent/DE1236668B/de active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1061451B (de) * | 1957-10-31 | 1959-07-16 | Siemens Reiniger Werke Ag | Roentgenstrahlenmesser |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1764066B1 (de) * | 1967-03-29 | 1971-08-05 | Lenia Fisitscheskij I Im P N L | Kernstrahlungsdetektor aus Diamant und Verfahren zu dessen Herstellung |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1288817A (fr) | 1962-03-30 |
| NL274771A (enrdf_load_stackoverflow) | |
| BE613282A (fr) | 1962-05-16 |
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