FR1288817A - Diode à jonction semi-conductrice destinée à la détection de particules alpha - Google Patents

Diode à jonction semi-conductrice destinée à la détection de particules alpha

Info

Publication number
FR1288817A
FR1288817A FR852622A FR852622A FR1288817A FR 1288817 A FR1288817 A FR 1288817A FR 852622 A FR852622 A FR 852622A FR 852622 A FR852622 A FR 852622A FR 1288817 A FR1288817 A FR 1288817A
Authority
FR
France
Prior art keywords
particle detection
junction diode
semiconductor junction
alpha particle
alpha
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR852622A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
CSF Compagnie Generale de Telegraphie sans Fil SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL274771D priority Critical patent/NL274771A/xx
Application filed by CSF Compagnie Generale de Telegraphie sans Fil SA filed Critical CSF Compagnie Generale de Telegraphie sans Fil SA
Priority to FR852622A priority patent/FR1288817A/fr
Priority to BE613282A priority patent/BE613282A/fr
Priority to DEC26161A priority patent/DE1236668B/de
Application granted granted Critical
Publication of FR1288817A publication Critical patent/FR1288817A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
    • H10F30/2955—Shallow PN junction radiation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
FR852622A 1961-02-14 1961-02-14 Diode à jonction semi-conductrice destinée à la détection de particules alpha Expired FR1288817A (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
NL274771D NL274771A (enrdf_load_stackoverflow) 1961-02-14
FR852622A FR1288817A (fr) 1961-02-14 1961-02-14 Diode à jonction semi-conductrice destinée à la détection de particules alpha
BE613282A BE613282A (fr) 1961-02-14 1962-01-30 Diode à jonction semi-conductrice destinée à la détection de particules alpha
DEC26161A DE1236668B (de) 1961-02-14 1962-02-03 Silizium-Halbleiterdiode zum Nachweis von Alphateilchen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR852622A FR1288817A (fr) 1961-02-14 1961-02-14 Diode à jonction semi-conductrice destinée à la détection de particules alpha

Publications (1)

Publication Number Publication Date
FR1288817A true FR1288817A (fr) 1962-03-30

Family

ID=8748762

Family Applications (1)

Application Number Title Priority Date Filing Date
FR852622A Expired FR1288817A (fr) 1961-02-14 1961-02-14 Diode à jonction semi-conductrice destinée à la détection de particules alpha

Country Status (4)

Country Link
BE (1) BE613282A (enrdf_load_stackoverflow)
DE (1) DE1236668B (enrdf_load_stackoverflow)
FR (1) FR1288817A (enrdf_load_stackoverflow)
NL (1) NL274771A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1601100A (enrdf_load_stackoverflow) * 1967-03-29 1970-08-10

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061451B (de) * 1957-10-31 1959-07-16 Siemens Reiniger Werke Ag Roentgenstrahlenmesser

Also Published As

Publication number Publication date
DE1236668B (de) 1967-03-16
NL274771A (enrdf_load_stackoverflow)
BE613282A (fr) 1962-05-16

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