DE1217499B - Elektrolumineszenter Halbleiter vom A B-Typ als Injektionsstrahlungsquelle und Verfahren zu seiner Herstellung - Google Patents

Elektrolumineszenter Halbleiter vom A B-Typ als Injektionsstrahlungsquelle und Verfahren zu seiner Herstellung

Info

Publication number
DE1217499B
DE1217499B DEN24488A DEN0024488A DE1217499B DE 1217499 B DE1217499 B DE 1217499B DE N24488 A DEN24488 A DE N24488A DE N0024488 A DEN0024488 A DE N0024488A DE 1217499 B DE1217499 B DE 1217499B
Authority
DE
Germany
Prior art keywords
zinc
melt
aluminum
arsenide
arsenic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEN24488A
Other languages
German (de)
English (en)
Inventor
Dr Werner Kischio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Priority to DEN24488A priority Critical patent/DE1217499B/de
Priority to NL6501604A priority patent/NL6501604A/xx
Priority to SE02110/65A priority patent/SE328648B/xx
Priority to AT143265A priority patent/AT254266B/de
Priority to GB7064/65A priority patent/GB1093402A/en
Priority to FR6537A priority patent/FR1425106A/fr
Publication of DE1217499B publication Critical patent/DE1217499B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DEN24488A 1964-02-21 1964-02-21 Elektrolumineszenter Halbleiter vom A B-Typ als Injektionsstrahlungsquelle und Verfahren zu seiner Herstellung Pending DE1217499B (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DEN24488A DE1217499B (de) 1964-02-21 1964-02-21 Elektrolumineszenter Halbleiter vom A B-Typ als Injektionsstrahlungsquelle und Verfahren zu seiner Herstellung
NL6501604A NL6501604A (enExample) 1964-02-21 1965-02-10
SE02110/65A SE328648B (enExample) 1964-02-21 1965-02-18
AT143265A AT254266B (de) 1964-02-21 1965-02-18 Injektionsstrahlungsquelle mit Halbleitermaterial und Verfahren zur Herstellung eines solchen Halbleitermaterials
GB7064/65A GB1093402A (en) 1964-02-21 1965-02-18 Improvements in and relating to semiconductor recombination radiation sources
FR6537A FR1425106A (fr) 1964-02-21 1965-02-22 Source de rayonnement par injection en matériau semi-condueteur et procédé de fabrication de ce matériau

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEN24488A DE1217499B (de) 1964-02-21 1964-02-21 Elektrolumineszenter Halbleiter vom A B-Typ als Injektionsstrahlungsquelle und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
DE1217499B true DE1217499B (de) 1966-05-26

Family

ID=7343034

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN24488A Pending DE1217499B (de) 1964-02-21 1964-02-21 Elektrolumineszenter Halbleiter vom A B-Typ als Injektionsstrahlungsquelle und Verfahren zu seiner Herstellung

Country Status (6)

Country Link
AT (1) AT254266B (enExample)
DE (1) DE1217499B (enExample)
FR (1) FR1425106A (enExample)
GB (1) GB1093402A (enExample)
NL (1) NL6501604A (enExample)
SE (1) SE328648B (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048346B (enExample) * 1959-01-08
DE1052563B (de) * 1957-03-05 1959-03-12 Albrecht Fischer Dipl Phys Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048346B (enExample) * 1959-01-08
DE1052563B (de) * 1957-03-05 1959-03-12 Albrecht Fischer Dipl Phys Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen

Also Published As

Publication number Publication date
SE328648B (enExample) 1970-09-21
AT254266B (de) 1967-05-10
NL6501604A (enExample) 1965-08-23
FR1425106A (fr) 1966-01-14
GB1093402A (en) 1967-11-29

Similar Documents

Publication Publication Date Title
DE3123231C2 (enExample)
DE1444511A1 (de) Verfahren zur Herstellung von epitaxialen Filmen
DE3123234C2 (de) Verfahren zur Herstellung eines pn-Übergangs in einem Halbleitermaterial der Gruppe II-VI
DE2654063A1 (de) Verfahren zum herstellen eines bandes aus polykristallinem halbleitermaterial
DE2039381C3 (de) Verfahren zur Herstellung einer epitaktisch auf einem n-leitenden Substrat aus Galliumphosphid gewachsenen p-leitenden Galliumphosphidschicht
DE3926373A1 (de) Lichtemittierende diode aus siliciumcarbid mit einem pn-uebergang
DE3123233C2 (de) Verfahren zur Herstellung von CdS-,CdSe-,ZnS-oder ZnSe-Halbleiterkristallen
DE1185293B (de) Verfahren zum Herstellen einer Halbleiteranordnung
DE1093484B (de) Verfahren zur Herstellung von Halbleiterbauelementen, insbesondere pnp- oder npn-Leistungstransistoren
DE3237536C2 (de) Verfahren zur Herstellung eines p-leitenden (II/VI)-Verbindungshalbleiterkristalls
DE2251938C2 (de) Legierung aus einer festen Lösung zur thermoelektrischen Energieumwandlung
DE2062041A1 (de) Verfahren zur Herstellung von Haiblei terubergangen in festen Losungen durch Epitaxie m flussiger Phase, sowie diese Übergänge enthaltende Lichtdetektoren und lichtemittierende Vorrichtungen
DE1619977C3 (de) Zweifach dotiertes Galliumarsenid
DE2224619A1 (de) Lumineszierendes material
DE3123232C2 (de) Verfahren zur Herstellung eines pn-Übergangs in einem ZnSe-Einkristall
DE1639146C3 (de) Verfahren zur Herstellung einer elektrolumineszenten Halbleiterdiode mit p-n-Übergang
DE1414632A1 (de) Halbleiteranordnung
DE1217499B (de) Elektrolumineszenter Halbleiter vom A B-Typ als Injektionsstrahlungsquelle und Verfahren zu seiner Herstellung
DE1161036B (de) Verfahren zur Herstellung von hochdotierten AB-Halbleiterverbindungen
DE1544206C3 (de) Verfahren zum Herstellen von dotierten Galliumphosphid-Einkristallen mit Fotoaktivität
DE1131808B (de) Verfahren zum Herstellen von n-leitenden Halbleiterkoerpern von Transistoren od. dgl. aus Elementen der IV. Gruppe des Periodischen Systems, insbesondere Germanium oder Silizium
DE2165169C3 (de) Legierung, Herstellung derselben und Verwendung derselben für Vorrichtungen zur unmittelbaren thermoelektrischen Energieumwandlung
DE1272452B (de) Halbleiterstrahlungsquelle aus zinkdotiertem Galliumphosphid und Verfahren zu ihrer Herstellung
AT229371B (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE2420741C2 (de) Herstellungsverfahren für eine Leuchtdiode