DE1215109B - Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial - Google Patents

Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial

Info

Publication number
DE1215109B
DE1215109B DES64464A DES0064464A DE1215109B DE 1215109 B DE1215109 B DE 1215109B DE S64464 A DES64464 A DE S64464A DE S0064464 A DES0064464 A DE S0064464A DE 1215109 B DE1215109 B DE 1215109B
Authority
DE
Germany
Prior art keywords
rod
coil
diameter
current
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES64464A
Other languages
German (de)
English (en)
Inventor
Dr Wolfgang Keller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE594105D priority Critical patent/BE594105A/xx
Priority to NL135666D priority patent/NL135666C/xx
Priority to NL252591D priority patent/NL252591A/xx
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES64464A priority patent/DE1215109B/de
Priority to DES66492A priority patent/DE1277813B/de
Priority to GB21453/60A priority patent/GB899688A/en
Priority to CH774460A priority patent/CH389249A/de
Priority to US49330A priority patent/US3265470A/en
Priority to FR835936A priority patent/FR1265080A/fr
Publication of DE1215109B publication Critical patent/DE1215109B/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/06—Control, e.g. of temperature, of power
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • General Induction Heating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Manufacture And Refinement Of Metals (AREA)
DES64464A 1959-08-17 1959-08-17 Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial Pending DE1215109B (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
BE594105D BE594105A (sv) 1959-08-17
NL135666D NL135666C (sv) 1959-08-17
NL252591D NL252591A (sv) 1959-08-17
DES64464A DE1215109B (de) 1959-08-17 1959-08-17 Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial
DES66492A DE1277813B (de) 1959-08-17 1959-12-31 Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial
GB21453/60A GB899688A (en) 1959-08-17 1960-06-17 An automatically controlled process for melting a rod of semi-conductor material zone-by-zone
CH774460A CH389249A (de) 1959-08-17 1960-07-07 Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial
US49330A US3265470A (en) 1959-08-17 1960-08-12 Method and apparatus for floating-zone melting of semiconductor material
FR835936A FR1265080A (fr) 1959-08-17 1960-08-16 Procédé de fusion zonale sans creuset de matériaux semi-conducteurs

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES64464A DE1215109B (de) 1959-08-17 1959-08-17 Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial
DES66492A DE1277813B (de) 1959-08-17 1959-12-31 Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial

Publications (1)

Publication Number Publication Date
DE1215109B true DE1215109B (de) 1966-04-28

Family

ID=25995811

Family Applications (2)

Application Number Title Priority Date Filing Date
DES64464A Pending DE1215109B (de) 1959-08-17 1959-08-17 Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial
DES66492A Pending DE1277813B (de) 1959-08-17 1959-12-31 Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial

Family Applications After (1)

Application Number Title Priority Date Filing Date
DES66492A Pending DE1277813B (de) 1959-08-17 1959-12-31 Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial

Country Status (6)

Country Link
US (1) US3265470A (sv)
BE (1) BE594105A (sv)
CH (1) CH389249A (sv)
DE (2) DE1215109B (sv)
GB (1) GB899688A (sv)
NL (2) NL135666C (sv)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3321299A (en) * 1964-10-13 1967-05-23 Monsanto Co Apparatus and process for preparing semiconductor rods
DK116145B (da) * 1965-07-09 1969-12-15 Siemens Ag Anlæg til induktiv opvarmning af halvledermateriale.
NL6512921A (sv) * 1965-10-06 1967-04-07
US3446602A (en) * 1965-11-13 1969-05-27 Nippon Electric Co Flame fusion crystal growing employing vertically displaceable pedestal responsive to temperature
US3660062A (en) * 1968-02-29 1972-05-02 Siemens Ag Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material
US3776703A (en) * 1970-11-30 1973-12-04 Texas Instruments Inc Method of growing 1-0-0 orientation high perfection single crystal silicon by adjusting a focus coil
DE2220519C3 (de) * 1972-04-26 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Verfahren zum tiegelfreien Zonenschmelzen von Halbleiterstäben
GB1434527A (en) * 1972-09-08 1976-05-05 Secr Defence Growth of crystalline material
DK142586B (da) * 1977-07-07 1980-11-24 Topsil As Apparat til zonesmeltning af en halvlederstav.
US4857689A (en) * 1988-03-23 1989-08-15 High Temperature Engineering Corporation Rapid thermal furnace for semiconductor processing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2470443A (en) * 1944-07-21 1949-05-17 Mittelmann Eugene Means for and method of continuously matching and controlling power for high-frequency heating of reactive loads
US2508321A (en) * 1945-09-05 1950-05-16 Raymond M Wilmotte Method and means of controlling electronic heating
US2691732A (en) * 1948-12-07 1954-10-12 Westinghouse Electric Corp Radio frequency generator
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2868902A (en) * 1958-03-19 1959-01-13 Prec Metalsmiths Inc Induction heater control
DE1153908B (de) * 1958-04-22 1963-09-05 Siemens Ag Verfahren und Vorrichtung zum tiegellosen Zonenschmelzen mit Abstandsaenderung der Stabenden
GB904100A (en) * 1959-09-11 1962-08-22 Siemens Ag A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil

Also Published As

Publication number Publication date
DE1277813B (de) 1968-09-19
BE594105A (sv)
US3265470A (en) 1966-08-09
NL135666C (sv)
NL252591A (sv)
CH389249A (de) 1965-03-15
GB899688A (en) 1962-06-27

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