DE1208407B - Verfahren zur Herstellung von Halbleiterbauelementen - Google Patents
Verfahren zur Herstellung von HalbleiterbauelementenInfo
- Publication number
- DE1208407B DE1208407B DEA41945A DEA0041945A DE1208407B DE 1208407 B DE1208407 B DE 1208407B DE A41945 A DEA41945 A DE A41945A DE A0041945 A DEA0041945 A DE A0041945A DE 1208407 B DE1208407 B DE 1208407B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- junction
- semiconductor body
- activator
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000000034 method Methods 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title description 4
- 239000000463 material Substances 0.000 claims description 27
- 239000012190 activator Substances 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 210000004127 vitreous body Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Joining Of Glass To Other Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB46290/61A GB973104A (en) | 1961-12-27 | 1961-12-27 | Improvements relating to the manufacture of semi-conductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1208407B true DE1208407B (de) | 1966-01-05 |
Family
ID=10440634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEA41945A Pending DE1208407B (de) | 1961-12-27 | 1962-12-21 | Verfahren zur Herstellung von Halbleiterbauelementen |
Country Status (5)
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3510368A (en) * | 1966-08-29 | 1970-05-05 | Motorola Inc | Method of making a semiconductor device |
| US3643136A (en) * | 1970-05-22 | 1972-02-15 | Gen Electric | Glass passivated double beveled semiconductor device with partially spaced preform |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH298659A (fr) * | 1950-03-31 | 1954-05-15 | Hughes Tool Co | Dispositif électrique à cristal semi-conducteur mono-atomique. |
| FR1262176A (fr) * | 1959-07-30 | 1961-05-26 | Fairchild Semiconductor | Dispositif semi-conducteur et conducteur |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2798189A (en) * | 1953-04-16 | 1957-07-02 | Sylvania Electric Prod | Stabilized semiconductor devices |
| US3041710A (en) * | 1957-06-05 | 1962-07-03 | Gen Electric | Article and method of joining vitreous material |
| NL241488A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1958-07-21 | 1900-01-01 | ||
| US2930722A (en) * | 1959-02-03 | 1960-03-29 | Bell Telephone Labor Inc | Method of treating silicon |
-
0
- NL NL286978D patent/NL286978A/xx unknown
-
1961
- 1961-12-27 GB GB46290/61A patent/GB973104A/en not_active Expired
-
1962
- 1962-12-14 US US244685A patent/US3303068A/en not_active Expired - Lifetime
- 1962-12-18 CH CH1494362A patent/CH396226A/de unknown
- 1962-12-21 DE DEA41945A patent/DE1208407B/de active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH298659A (fr) * | 1950-03-31 | 1954-05-15 | Hughes Tool Co | Dispositif électrique à cristal semi-conducteur mono-atomique. |
| FR1262176A (fr) * | 1959-07-30 | 1961-05-26 | Fairchild Semiconductor | Dispositif semi-conducteur et conducteur |
Also Published As
| Publication number | Publication date |
|---|---|
| GB973104A (en) | 1964-10-21 |
| US3303068A (en) | 1967-02-07 |
| NL286978A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | |
| CH396226A (de) | 1965-07-31 |
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