DE1197988B - Halbleitendes Elektrodensystem - Google Patents

Halbleitendes Elektrodensystem

Info

Publication number
DE1197988B
DE1197988B DEN12773A DEN0012773A DE1197988B DE 1197988 B DE1197988 B DE 1197988B DE N12773 A DEN12773 A DE N12773A DE N0012773 A DEN0012773 A DE N0012773A DE 1197988 B DE1197988 B DE 1197988B
Authority
DE
Germany
Prior art keywords
crystal
resistance
electrode system
semiconducting
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DEN12773A
Other languages
German (de)
English (en)
Other versions
DE1197988C2 (cg-RX-API-DMAC10.html
Inventor
Hans Karl Becherer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1197988B publication Critical patent/DE1197988B/de
Application granted granted Critical
Publication of DE1197988C2 publication Critical patent/DE1197988C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W76/10—
    • H10W76/17—
    • H10W76/60—
    • H10W99/00—

Landscapes

  • Thermistors And Varistors (AREA)
DEN12773A 1955-09-30 1956-09-26 Halbleitendes Elektrodensystem Granted DE1197988B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL200897 1955-09-30

Publications (2)

Publication Number Publication Date
DE1197988B true DE1197988B (de) 1965-08-05
DE1197988C2 DE1197988C2 (cg-RX-API-DMAC10.html) 1966-02-24

Family

ID=19750725

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN12773A Granted DE1197988B (de) 1955-09-30 1956-09-26 Halbleitendes Elektrodensystem

Country Status (3)

Country Link
DE (1) DE1197988B (cg-RX-API-DMAC10.html)
FR (1) FR1157698A (cg-RX-API-DMAC10.html)
GB (1) GB808451A (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1238102B (de) * 1960-01-20 1967-04-06 Nippon Electric Co Halbleitergleichrichter

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2588956A (en) * 1946-07-31 1952-03-11 Gen Electric Co Ltd Crystal rectifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2588956A (en) * 1946-07-31 1952-03-11 Gen Electric Co Ltd Crystal rectifier

Also Published As

Publication number Publication date
FR1157698A (fr) 1958-06-02
DE1197988C2 (cg-RX-API-DMAC10.html) 1966-02-24
GB808451A (en) 1959-02-04

Similar Documents

Publication Publication Date Title
DE2235783C2 (de) Metalloxid-Varistorelement
DE1018460B (de) Elektrische Kippanordnung mit Kristalltrioden
DE1103389B (de) Schaltanordnung mit einer Vierschichthalbleiteranordnung
DE1080693B (de) Elektrische Halbleitervorrichtung
DE2050289A1 (cg-RX-API-DMAC10.html)
DE69128226T2 (de) Halbleiteranordnung vom Druckkontakttyp
DE1258518B (de) Verfahren zum Herstellen eines Halbleiterelements mit einer gelochten Isolierschicht ueber einer eingelassenen Zone
DE1197988B (de) Halbleitendes Elektrodensystem
DE1539070A1 (de) Halbleiteranordnungen mit kleinen Oberflaechenstroemen
US2916810A (en) Electric contacts
US2854611A (en) Rectifier
DE1010648B (de) Elektrodensystem mit einem halbleitenden Koerper, insbesondere Kristalldiode oder Transistor
DE1002472B (de) Verfahren zum Anloeten von Elektroden an einen Halbleiter
DE2026036A1 (de) pn-Planarhalbleiterelement für hohe Spannungen
DE1047318B (de) In einer vakuumdichten Huelle eingeschlossene Halbleiterkristalldiode
DE1239871B (de) Druckempfindliche Halbleiteranordnung
DE112016007133T5 (de) Halbleitervorrichtung
DE1208408B (de) Steuerbares und schaltbares Halbleiterbauelement mit vier Schichten abwechselnd entgegengesetzten Leitungstyps
DE1202906B (de) Steuerbarer Halbleitergleichrichter mit einem scheibenfoermigen vierschichtigen einkristallinen Halbleiterkoerper und Verfahren zu seinem Herstellen
DE2452209C3 (de) Metall-Halbleiterdiode
DE1130525B (de) Flaechentransistor mit einem scheibenfoermigen Halbleiterkoerper eines bestimmten Leitungstyps
GB944603A (en) Improvements relating to dielectric valves
DE102019215259A1 (de) Halbleitervorrichtung
DE102011081426A1 (de) Halbleitervorrichtung
DE1266510B (de) Halbleitervorrichtung mit einem Halbleiterkoerper mit mindestens einem Kontakt und Verfahren zum Herstellen