DE1192747B - Verfahren zum Herstellen eines Halbleiter-bauelementes mit quantenmechanischem Tunneleffekt aus n-leitendem Indium-Antimonid - Google Patents
Verfahren zum Herstellen eines Halbleiter-bauelementes mit quantenmechanischem Tunneleffekt aus n-leitendem Indium-AntimonidInfo
- Publication number
- DE1192747B DE1192747B DEJ20746A DEJ0020746A DE1192747B DE 1192747 B DE1192747 B DE 1192747B DE J20746 A DEJ20746 A DE J20746A DE J0020746 A DEJ0020746 A DE J0020746A DE 1192747 B DE1192747 B DE 1192747B
- Authority
- DE
- Germany
- Prior art keywords
- indium
- semiconductor
- antimonide
- semiconductor component
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 description 31
- 239000000463 material Substances 0.000 description 17
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 15
- 230000007704 transition Effects 0.000 description 14
- 230000000694 effects Effects 0.000 description 11
- 229910052738 indium Inorganic materials 0.000 description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005275 alloying Methods 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000007850 degeneration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000006187 pill Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/979—Tunnel diodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US67061A US3228811A (en) | 1960-11-03 | 1960-11-03 | Quantum mechanical tunneling semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1192747B true DE1192747B (de) | 1965-05-13 |
Family
ID=22073468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEJ20746A Pending DE1192747B (de) | 1960-11-03 | 1961-10-30 | Verfahren zum Herstellen eines Halbleiter-bauelementes mit quantenmechanischem Tunneleffekt aus n-leitendem Indium-Antimonid |
Country Status (4)
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3335337A (en) * | 1962-03-31 | 1967-08-08 | Auritsu Electronic Works Ltd | Negative resistance semiconductor devices |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2847335A (en) * | 1953-09-15 | 1958-08-12 | Siemens Ag | Semiconductor devices and method of manufacturing them |
| US2979428A (en) * | 1957-04-11 | 1961-04-11 | Rca Corp | Semiconductor devices and methods of making them |
| US3033714A (en) * | 1957-09-28 | 1962-05-08 | Sony Corp | Diode type semiconductor device |
| US3109758A (en) * | 1959-10-26 | 1963-11-05 | Bell Telephone Labor Inc | Improved tunnel diode |
-
0
- NL NL270760D patent/NL270760A/xx unknown
-
1960
- 1960-11-03 US US67061A patent/US3228811A/en not_active Expired - Lifetime
-
1961
- 1961-10-30 DE DEJ20746A patent/DE1192747B/de active Pending
- 1961-11-02 GB GB39212/61A patent/GB976294A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL270760A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | |
| GB976294A (en) | 1964-11-25 |
| US3228811A (en) | 1966-01-11 |
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