DE1190107B - Thermokompressionsverfahren zum Anbringen der Kontaktelektrode oder Zuleitung eines Halbleiterbauelements - Google Patents

Thermokompressionsverfahren zum Anbringen der Kontaktelektrode oder Zuleitung eines Halbleiterbauelements

Info

Publication number
DE1190107B
DE1190107B DES75819A DES0075819A DE1190107B DE 1190107 B DE1190107 B DE 1190107B DE S75819 A DES75819 A DE S75819A DE S0075819 A DES0075819 A DE S0075819A DE 1190107 B DE1190107 B DE 1190107B
Authority
DE
Germany
Prior art keywords
contact electrode
lead
contact
point
stamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES75819A
Other languages
German (de)
English (en)
Inventor
Dr Karl Siebertz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL283249D priority Critical patent/NL283249A/xx
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES75819A priority patent/DE1190107B/de
Priority to GB35068/62A priority patent/GB993280A/en
Priority to CH1098762A priority patent/CH396224A/de
Priority to US223976A priority patent/US3274667A/en
Priority to FR909765A priority patent/FR1333644A/fr
Priority to SE10061/62A priority patent/SE305033B/xx
Publication of DE1190107B publication Critical patent/DE1190107B/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/4501Shape
    • H01L2224/45012Cross-sectional shape
    • H01L2224/45015Cross-sectional shape being circular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01032Germanium [Ge]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12036PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Electrodes Of Semiconductors (AREA)
DES75819A 1961-09-19 1961-09-19 Thermokompressionsverfahren zum Anbringen der Kontaktelektrode oder Zuleitung eines Halbleiterbauelements Pending DE1190107B (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL283249D NL283249A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1961-09-19
DES75819A DE1190107B (de) 1961-09-19 1961-09-19 Thermokompressionsverfahren zum Anbringen der Kontaktelektrode oder Zuleitung eines Halbleiterbauelements
GB35068/62A GB993280A (en) 1961-09-19 1962-09-14 Improvements in or relating to process for contacting a semi-conductor arrangement
CH1098762A CH396224A (de) 1961-09-19 1962-09-17 Verfahren zum Kontaktieren einer Halbleiteranordnung
US223976A US3274667A (en) 1961-09-19 1962-09-17 Method of permanently contacting an electronic semiconductor
FR909765A FR1333644A (fr) 1961-09-19 1962-09-18 Procédé pour réaliser les contacts d'un dispositif à semi-conducteur
SE10061/62A SE305033B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1961-09-19 1962-09-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES75819A DE1190107B (de) 1961-09-19 1961-09-19 Thermokompressionsverfahren zum Anbringen der Kontaktelektrode oder Zuleitung eines Halbleiterbauelements

Publications (1)

Publication Number Publication Date
DE1190107B true DE1190107B (de) 1965-04-01

Family

ID=7505644

Family Applications (1)

Application Number Title Priority Date Filing Date
DES75819A Pending DE1190107B (de) 1961-09-19 1961-09-19 Thermokompressionsverfahren zum Anbringen der Kontaktelektrode oder Zuleitung eines Halbleiterbauelements

Country Status (6)

Country Link
US (1) US3274667A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH396224A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1190107B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB993280A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL283249A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE305033B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5068206A (en) * 1988-07-22 1991-11-26 Rohm Co., Ltd. Method of manufacturing semiconductor devices, and leadframe and differential overlapping apparatus therefor

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1106163A (en) * 1964-03-02 1968-03-13 Post Office Improvements in or relating to the bonding of metals to semiconductor, metallic or non-metallic surfaces
US3348016A (en) * 1964-04-29 1967-10-17 Western Electric Co Apparatus for attaching leads to electrical components
US3515952A (en) * 1965-02-17 1970-06-02 Motorola Inc Mounting structure for high power transistors
US3442003A (en) * 1965-07-26 1969-05-06 Teledyne Inc Method for interconnecting thin films
US3459918A (en) * 1967-01-13 1969-08-05 Ibm Welding of electrical elements having voltage sensitive components
US3577042A (en) * 1967-06-19 1971-05-04 Int Rectifier Corp Gate connection for controlled rectifiers
US3617682A (en) * 1969-06-23 1971-11-02 Gen Electric Semiconductor chip bonder
US3660632A (en) * 1970-06-17 1972-05-02 Us Navy Method for bonding silicon chips to a cold substrate
GB1389542A (en) * 1971-06-17 1975-04-03 Mullard Ltd Methods of securing a semiconductor body to a support
US3783348A (en) * 1972-10-30 1974-01-01 Rca Corp Encapsulated semiconductor device assembly
US3878553A (en) * 1972-12-26 1975-04-15 Texas Instruments Inc Interdigitated mesa beam lead diode and series array thereof
JPS5444881A (en) * 1977-09-16 1979-04-09 Nec Corp Electrode wiring structure of integrated circuit
DE2929623C2 (de) * 1979-07-21 1981-11-26 W.C. Heraeus Gmbh, 6450 Hanau Feinstdraht aus einer Aluminiumlegierung
US4441248A (en) * 1982-12-02 1984-04-10 Stanley Electric Company, Ltd. On-line inspection method and system for bonds made to electronic components
GB2162686B (en) * 1984-08-02 1988-05-11 Stc Plc Thermistors

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE559732A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1956-10-31 1900-01-01
DE1034274B (de) * 1957-04-18 1958-07-17 Siemens Ag Verfahren zur Herstellung einer Verbindung eines draht- oder bandfoermigen elektrischen Leiters mit einer Elektrode eines Halbleiterelementes
AT203550B (de) * 1957-03-01 1959-05-25 Western Electric Co Halbleitereinrichtung und Verfahren zu deren Herstellung

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3068412A (en) * 1962-12-11 Electrical contact and method of making the same
US1938499A (en) * 1931-01-19 1933-12-05 Budd Edward G Mfg Co Apparatus for electric welding
US2372211A (en) * 1942-05-11 1945-03-27 Progressive Welder Company Welding apparatus
US2796510A (en) * 1955-10-10 1957-06-18 Rohr Aircraft Corp Method of resistance welding sandwich panels
GB846559A (en) * 1956-01-18 1960-08-31 Telefunken Gmbh Improvements in or relating to a method of securing electrical components to circuit panels having adhering conductors
US2946119A (en) * 1956-04-23 1960-07-26 Aeroprojects Inc Method and apparatus employing vibratory energy for bonding metals
US2996800A (en) * 1956-11-28 1961-08-22 Texas Instruments Inc Method of making ohmic connections to silicon semiconductors
GB846155A (en) * 1956-12-07 1960-08-24 Du Pont Improvements in or relating to the manufacture of monovinylacetylene
US3109225A (en) * 1958-08-29 1963-11-05 Rca Corp Method of mounting a semiconductor device
US3061923A (en) * 1959-05-11 1962-11-06 Knapp Mills Inc Method of making composite sheets
US3091849A (en) * 1959-09-14 1963-06-04 Pacific Semiconductors Inc Method of bonding materials
US3115697A (en) * 1960-08-31 1963-12-31 Pacific Semiconductors Inc Method of making a low resistance ohmic contact
US3125803A (en) * 1960-10-24 1964-03-24 Terminals

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE559732A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1956-10-31 1900-01-01
AT203550B (de) * 1957-03-01 1959-05-25 Western Electric Co Halbleitereinrichtung und Verfahren zu deren Herstellung
DE1034274B (de) * 1957-04-18 1958-07-17 Siemens Ag Verfahren zur Herstellung einer Verbindung eines draht- oder bandfoermigen elektrischen Leiters mit einer Elektrode eines Halbleiterelementes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5068206A (en) * 1988-07-22 1991-11-26 Rohm Co., Ltd. Method of manufacturing semiconductor devices, and leadframe and differential overlapping apparatus therefor

Also Published As

Publication number Publication date
US3274667A (en) 1966-09-27
NL283249A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1900-01-01
GB993280A (en) 1965-05-26
CH396224A (de) 1965-07-31
SE305033B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1968-10-14

Similar Documents

Publication Publication Date Title
DE1190107B (de) Thermokompressionsverfahren zum Anbringen der Kontaktelektrode oder Zuleitung eines Halbleiterbauelements
DE2063579A1 (de) Halbleitereinnchtung
DE2625089A1 (de) Anordnung zum auftrennen von leiterbahnen auf integrierten schaltkreisen
DE1063277B (de) Verfahren zur Herstellung eines Halbleiters mit Legierungselektroden
EP0037005A1 (de) Sperrfreier niederohmiger Kontakt auf III-V-Halbleitermaterial und Verfahren zu seiner Herstellung
DE1300165B (de) Mikrominiaturisierte Halbleiterdiodenanordnung
DE1275221B (de) Verfahren zur Herstellung eines einen Tunneleffekt aufweisenden elektronischen Festkoerperbauelementes
DE2048020A1 (de) Halbleilergedachtnisvornchtung mit einem den Halbleiter berührenden Viel schichtisolator
EP0060427B1 (de) Sensor zur Messung physikalischer Grössen sowie Verfahren zu seiner Herstellung und seine Verwendung
DE1239871B (de) Druckempfindliche Halbleiteranordnung
DE1648724A1 (de) Spannungsmessbruecke und Verfahren zur Herstellung derselben
AT239852B (de) Verfahren zum Kontaktieren einer Halbleiteranordnung
DE946645C (de) Trockengleichrichter der Freiflächeinbauart
AT250699B (de) Thermoelektrische Einrichtung
DE1113520B (de) Verfahren zur Herstellung von Halbleiteranordnungen, insbesondere fuer Starkstromzwecke, mit mehreren verhaeltnismaessig grossflaechigen Schichten unterschiedlichen Leitfaehigkeitstyps
AT244390B (de) In ein Gehäuse eingebaute Halbleiteranordnung
DE1296264B (de) Legierungsverfahren zur Herstellung von Halbleiterelementen
AT235598B (de) Verfahren zur Herstellung einer elektrischen Verbindung ohne Gleichrichterwirkung zwischen einer Stromzuführung und einem thermoelektrischen Halbleiter
DE1936746A1 (de) Halbleiterresonanzkreis
DE1116826B (de) Verfahren zum Herstellen einer in einem Schutzgehaeuse untergebrachten, mindestens zwei dicht nebeneinander in einer Ebene einlegierte Metallelektroden aufweisenden Halbleiterkristallanordnung
DE1764998A1 (de) Silizium-Siliziumdioxyd-Kondensator mit hohem Guetefaktor
DE2400863B2 (de) Verfahren zur Kontaktierung der Elektroden eines scheibenförmigen Halbleiterelementes
DE1163975C2 (de) Verfahren zur Verbesserung der elektrischen Eigenschaften von Halbleiteranordnungen
DE1163977B (de) Sperrfreier Kontakt an einer Zone des Halbleiterkoerpers eines Halbleiterbauelementes
AT221587B (de) Halbleiterelektrodensystem mit einem Halbleiterkörper und wenigstens einer aluminiumenthaltenden Elektrode auf diesem Körper