DE1180458B - Einrichtung zur Erzeugung kohaerenter Strahlung in einem einkristallinen Halbleiter - Google Patents

Einrichtung zur Erzeugung kohaerenter Strahlung in einem einkristallinen Halbleiter

Info

Publication number
DE1180458B
DE1180458B DEG39018A DEG0039018A DE1180458B DE 1180458 B DE1180458 B DE 1180458B DE G39018 A DEG39018 A DE G39018A DE G0039018 A DEG0039018 A DE G0039018A DE 1180458 B DE1180458 B DE 1180458B
Authority
DE
Germany
Prior art keywords
area
radiation
semiconductor diode
region
coherent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEG39018A
Other languages
German (de)
English (en)
Inventor
Robert Noel Hall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE1180458B publication Critical patent/DE1180458B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/002—Amphoteric doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
DEG39018A 1962-10-24 1963-10-24 Einrichtung zur Erzeugung kohaerenter Strahlung in einem einkristallinen Halbleiter Pending DE1180458B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US232846A US3245002A (en) 1962-10-24 1962-10-24 Stimulated emission semiconductor devices

Publications (1)

Publication Number Publication Date
DE1180458B true DE1180458B (de) 1964-10-29

Family

ID=22874858

Family Applications (1)

Application Number Title Priority Date Filing Date
DEG39018A Pending DE1180458B (de) 1962-10-24 1963-10-24 Einrichtung zur Erzeugung kohaerenter Strahlung in einem einkristallinen Halbleiter

Country Status (7)

Country Link
US (1) US3245002A (US20020095090A1-20020718-M00002.png)
BE (1) BE639066A (US20020095090A1-20020718-M00002.png)
DE (1) DE1180458B (US20020095090A1-20020718-M00002.png)
FR (1) FR1385449A (US20020095090A1-20020718-M00002.png)
GB (1) GB1044586A (US20020095090A1-20020718-M00002.png)
NL (2) NL139425B (US20020095090A1-20020718-M00002.png)
SE (1) SE317453B (US20020095090A1-20020718-M00002.png)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1295739B (de) * 1964-11-28 1969-05-22 Deutsche Bundespost Optischer Sender mit einer Halbleiterdiode als stimulierbares Medium (Injektionslaserdiode)
DE1298216B (de) * 1965-06-30 1969-06-26 Siemens Ag Laser-Diode
DE3728566A1 (de) * 1987-08-27 1989-03-09 Telefunken Electronic Gmbh Optoelektronisches halbleiterbauelement

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NL299169A (US20020095090A1-20020718-M00002.png) * 1962-10-30
US3341937A (en) * 1963-02-20 1967-09-19 Ibm Crystalline injection laser device manufacture
US3349475A (en) * 1963-02-21 1967-10-31 Ibm Planar injection laser structure
DE1291029B (de) * 1963-02-21 1969-03-20 Siemens Ag Nach dem Maser- bzw. Laserprinzip arbeitende Anordnung fuer Mikrowellen- bzw. Lichtstrahlung
US3354406A (en) * 1963-04-22 1967-11-21 Rca Corp Element and apparatus for generating coherent radiation
US3312910A (en) * 1963-05-06 1967-04-04 Franklin F Offner Frequency modulation of radiation emitting p-n junctions
US3340479A (en) * 1963-06-14 1967-09-05 Bell Telephone Labor Inc Laser tunable by junction coupling
US3363195A (en) * 1963-07-01 1968-01-09 Bell Telephone Labor Inc Junction diode maser
US3330991A (en) * 1963-07-12 1967-07-11 Raytheon Co Non-thermionic electron emission devices
US3309553A (en) * 1963-08-16 1967-03-14 Varian Associates Solid state radiation emitters
US3353114A (en) * 1963-09-09 1967-11-14 Boeing Co Tunnel-injection light emitting devices
US3330957A (en) * 1963-09-19 1967-07-11 Russell W Runnels Piezoelectric frequency modulated optical maser
US3483397A (en) * 1963-10-16 1969-12-09 Westinghouse Electric Corp Apparatus and method for controlling the output of a light emitting semiconductor device
US3412344A (en) * 1963-10-30 1968-11-19 Rca Corp Semiconductor plasma laser
US3305685A (en) * 1963-11-07 1967-02-21 Univ California Semiconductor laser and method
US3349476A (en) * 1963-11-26 1967-10-31 Ibm Formation of large area contacts to semiconductor devices
DE1439316C3 (de) * 1963-12-13 1975-07-31 Siemens Ag, 1000 Berlin Und 8000 Muenchen Anordnung zur Erzeugung und/oder Verstärkung elektromagnetischer Strahlung
NL143402B (nl) * 1964-02-12 1974-09-16 Philips Nv Halfgeleiderinrichting met een een halfgeleiderlichaam bevattende gestuurde injectierecombinatiestralingsbron.
US3359508A (en) * 1964-02-19 1967-12-19 Gen Electric High power junction laser structure
US3305412A (en) * 1964-02-20 1967-02-21 Hughes Aircraft Co Method for preparing a gallium arsenide diode
US3300671A (en) * 1964-03-10 1967-01-24 Gen Electric Surface-adjacent junction electroluminescent device
US3482189A (en) * 1964-03-24 1969-12-02 Gen Electric Frequency control of semiconductive junction lasers by application of force
US3327136A (en) * 1964-03-30 1967-06-20 Abraham George Variable gain tunneling
GB1053033A (US20020095090A1-20020718-M00002.png) * 1964-04-03
US3404304A (en) * 1964-04-30 1968-10-01 Texas Instruments Inc Semiconductor junction device for generating optical radiation
US3432221A (en) * 1964-08-05 1969-03-11 Ibm Stressed laser scanning device using light polarizers
US3301716A (en) * 1964-09-10 1967-01-31 Rca Corp Semiconductor device fabrication
US3385970A (en) * 1964-12-18 1968-05-28 Bunker Ramo Nonreciprocal signal coupling apparatus using optical coupling link in waveguide operating below cutoff
US3365630A (en) * 1965-01-29 1968-01-23 Bell Telephone Labor Inc Electroluminescent gallium phosphide crystal with three dopants
US3399313A (en) * 1965-04-07 1968-08-27 Sperry Rand Corp Photoparametric amplifier diode
US3385981A (en) * 1965-05-03 1968-05-28 Hughes Aircraft Co Double injection two carrier devices and method of operation
US3568087A (en) * 1965-07-16 1971-03-02 Massachusetts Inst Technology Optically pumped semiconductor laser
US3417246A (en) * 1965-07-26 1968-12-17 Gen Electric Frequency modulated semiconductor junction laser
US3427211A (en) * 1965-07-28 1969-02-11 Ibm Process of making gallium phosphide dendritic crystals with grown in p-n light emitting junctions
US3484716A (en) * 1965-10-01 1969-12-16 Gen Electric High duty cycle laser device
US3521073A (en) * 1965-11-26 1970-07-21 Gen Dynamics Corp Light emitting semiconductor diode using the field emission effect
US3387163A (en) * 1965-12-20 1968-06-04 Bell Telephone Labor Inc Luminescent semiconductor devices including a compensated zone with a substantially balanced concentration of donors and acceptors
US3341708A (en) * 1965-12-27 1967-09-12 Robert R Bilderback Amplitude modulated laser transmitter
US3303432A (en) * 1966-04-18 1967-02-07 Gen Electric High power semiconductor laser devices
US3524066A (en) * 1966-08-22 1970-08-11 Monsanto Co Fluid measurement system having sample chamber with opposed reflecting members for causing multiple reflections
US3484854A (en) * 1966-10-17 1969-12-16 Westinghouse Electric Corp Processing semiconductor materials
US3459942A (en) * 1966-12-05 1969-08-05 Gen Electric High frequency light source
GB1176410A (en) * 1966-12-14 1970-01-01 Hitachi Ltd A Solid State Generator-Detector of Electromagnetic Waves
FR1518717A (fr) * 1966-12-21 1968-03-29 Radiotechnique Coprim Rtc Perfectionnements aux diodes électroluminescentes
US3483487A (en) * 1966-12-29 1969-12-09 Bell Telephone Labor Inc Stress modulation of electromagnetic radiation in semiconductors,with wide range of frequency tuning
US3501679A (en) * 1967-02-27 1970-03-17 Nippon Electric Co P-n junction type light-emitting semiconductor
US3546467A (en) * 1967-04-21 1970-12-08 Bionic Instr Inc Typhlocane with range extending obstacle sensing devices
US3479613A (en) * 1967-04-28 1969-11-18 Us Navy Laser diode and method
US3541375A (en) * 1967-06-07 1970-11-17 Gen Electric Barrier layer electroluminescent devices
US3526851A (en) * 1967-07-10 1970-09-01 Rca Corp Filamentary structure injection laser having a very narrow active junction
FR1537810A (fr) * 1967-07-13 1968-08-30 Automatisme Cie Gle Dispositif optique de lecture de code
DE1614846B2 (de) * 1967-07-26 1976-09-23 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Halbleiterdiodenanordnung
US3585520A (en) * 1967-09-13 1971-06-15 Hitachi Ltd Device for generating pulsed light by stimulated emission in a semiconductor triggered by the formation and transit of a high field domain
JPS4813994B1 (US20020095090A1-20020718-M00002.png) * 1968-03-15 1973-05-02
US3597755A (en) * 1968-05-28 1971-08-03 Sanders Associates Inc Active electro-optical intrusion alarm system having automatic balancing means
US3537029A (en) * 1968-06-10 1970-10-27 Rca Corp Semiconductor laser producing light at two wavelengths simultaneously
DE1789061A1 (de) * 1968-09-30 1971-12-23 Siemens Ag Laserdiode
US3539945A (en) * 1969-03-25 1970-11-10 Us Army Methods of modulating injection diodes for maximum optical power
US3605037A (en) * 1969-05-02 1971-09-14 Bell Telephone Labor Inc Curved junction laser devices
US3573654A (en) * 1969-07-18 1971-04-06 Us Navy Narrow band tunable laser oscillator amplifier
US3579142A (en) * 1969-07-18 1971-05-18 Us Navy Thin film laser
US3579130A (en) * 1969-07-18 1971-05-18 Vern N Smiley Thin film active interference filter
AT300307B (de) * 1970-02-26 1972-07-25 Pass & Sohn Gummiwerk Aufrollbarer Stabrost
US3660669A (en) * 1970-04-15 1972-05-02 Motorola Inc Optical coupler made by juxtaposition of lead frame mounted sensor and light emitter
US3675150A (en) * 1970-06-30 1972-07-04 Ibm Internal modulation of injection lasers using acoustic waves
US3739301A (en) * 1971-06-30 1973-06-12 Us Army Single diode single sideband modulator
US3747016A (en) * 1971-08-26 1973-07-17 Rca Corp Semiconductor injection laser
US3736410A (en) * 1971-12-06 1973-05-29 American Regitel Corp Hand held apparatus for sensing data bits carried on a sheet
US3901738A (en) * 1973-12-20 1975-08-26 Hughes Aircraft Co Ion implanted junction laser and process for making same
US3936322A (en) * 1974-07-29 1976-02-03 International Business Machines Corporation Method of making a double heterojunction diode laser
US4393393A (en) * 1979-08-13 1983-07-12 Mcdonnell Douglas Corporation Laser diode with double sided heat sink
WO2022200183A1 (en) 2021-03-24 2022-09-29 Element Six Technologies Limited Laser diode assembly and a method of assembling such a laser diode assembly

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US2890976A (en) * 1954-12-30 1959-06-16 Sprague Electric Co Monocrystalline tubular semiconductor
DE1248826B (US20020095090A1-20020718-M00002.png) * 1958-04-30
US3102201A (en) * 1958-12-15 1963-08-27 Rca Corp Semiconductor device for generating modulated radiation
NL247746A (US20020095090A1-20020718-M00002.png) * 1959-01-27
USRE25632E (en) * 1960-01-11 1964-08-18 Optical maser

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1295739B (de) * 1964-11-28 1969-05-22 Deutsche Bundespost Optischer Sender mit einer Halbleiterdiode als stimulierbares Medium (Injektionslaserdiode)
DE1298216B (de) * 1965-06-30 1969-06-26 Siemens Ag Laser-Diode
DE3728566A1 (de) * 1987-08-27 1989-03-09 Telefunken Electronic Gmbh Optoelektronisches halbleiterbauelement

Also Published As

Publication number Publication date
SE317453B (US20020095090A1-20020718-M00002.png) 1969-11-17
NL139425B (nl) 1973-07-16
US3245002A (en) 1966-04-05
FR1385449A (fr) 1965-01-15
NL299675A (US20020095090A1-20020718-M00002.png) 1900-01-01
GB1044586A (en) 1966-10-05
BE639066A (US20020095090A1-20020718-M00002.png) 1900-01-01

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