DE1179184B - Verfahren zum Herstellen von einkristallinen, insbesondere duennen halbleitenden Schichten - Google Patents
Verfahren zum Herstellen von einkristallinen, insbesondere duennen halbleitenden SchichtenInfo
- Publication number
- DE1179184B DE1179184B DES71475A DES0071475A DE1179184B DE 1179184 B DE1179184 B DE 1179184B DE S71475 A DES71475 A DE S71475A DE S0071475 A DES0071475 A DE S0071475A DE 1179184 B DE1179184 B DE 1179184B
- Authority
- DE
- Germany
- Prior art keywords
- carrier
- semiconductor material
- layer
- crystal
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/071—Heating, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL270518D NL270518A (US20080293856A1-20081127-C00150.png) | 1960-11-30 | ||
DES71475A DE1179184B (de) | 1960-11-30 | 1960-11-30 | Verfahren zum Herstellen von einkristallinen, insbesondere duennen halbleitenden Schichten |
CH1139761A CH412821A (de) | 1960-11-30 | 1961-10-02 | Verfahren zum Herstellen von einkristallinen, insbesondere dünnen, halbleitenden Schichten |
GB42489/61A GB940236A (en) | 1960-11-30 | 1961-11-28 | Improvements in or relating to layers of semiconductor material |
FR880377A FR1307108A (fr) | 1960-11-30 | 1961-11-29 | Procédé pour fabriquer des couches semi-conductrices monocristallines |
US155649A US3160522A (en) | 1960-11-30 | 1961-11-29 | Method for producting monocrystalline semiconductor layers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES71475A DE1179184B (de) | 1960-11-30 | 1960-11-30 | Verfahren zum Herstellen von einkristallinen, insbesondere duennen halbleitenden Schichten |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1179184B true DE1179184B (de) | 1964-10-08 |
Family
ID=7502500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DES71475A Pending DE1179184B (de) | 1960-11-30 | 1960-11-30 | Verfahren zum Herstellen von einkristallinen, insbesondere duennen halbleitenden Schichten |
Country Status (5)
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1251441B (US20080293856A1-20081127-C00150.png) * | 1962-06-20 | |||
FR1370724A (fr) * | 1963-07-15 | 1964-08-28 | Electronique & Automatisme Sa | Procédé de réalisation de couches minces monocristallines |
US3336159A (en) * | 1963-10-07 | 1967-08-15 | Ncr Co | Method for growing single thin film crystals |
US3344054A (en) * | 1964-03-02 | 1967-09-26 | Schjeldahl Co G T | Art of controlling sputtering and metal evaporation by means of a plane acceptor |
US3335038A (en) * | 1964-03-30 | 1967-08-08 | Ibm | Methods of producing single crystals on polycrystalline substrates and devices using same |
US3366462A (en) * | 1964-11-04 | 1968-01-30 | Siemens Ag | Method of producing monocrystalline semiconductor material |
DE1297086B (de) * | 1965-01-29 | 1969-06-12 | Siemens Ag | Verfahren zum Herstellen einer Schicht von einkristallinem Halbleitermaterial |
US3433682A (en) * | 1965-07-06 | 1969-03-18 | American Standard Inc | Silicon coated graphite |
US3460240A (en) * | 1965-08-24 | 1969-08-12 | Westinghouse Electric Corp | Manufacture of semiconductor solar cells |
US3420704A (en) * | 1966-08-19 | 1969-01-07 | Nasa | Depositing semiconductor films utilizing a thermal gradient |
US3517198A (en) * | 1966-12-01 | 1970-06-23 | Gen Electric | Light emitting and absorbing devices |
US3469308A (en) * | 1967-05-22 | 1969-09-30 | Philco Ford Corp | Fabrication of semiconductive devices |
US4058418A (en) * | 1974-04-01 | 1977-11-15 | Solarex Corporation | Fabrication of thin film solar cells utilizing epitaxial deposition onto a liquid surface to obtain lateral growth |
US4003770A (en) * | 1975-03-24 | 1977-01-18 | Monsanto Research Corporation | Plasma spraying process for preparing polycrystalline solar cells |
DE2638270C2 (de) * | 1976-08-25 | 1983-01-27 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium |
US4400715A (en) * | 1980-11-19 | 1983-08-23 | International Business Machines Corporation | Thin film semiconductor device and method for manufacture |
US4487162A (en) * | 1980-11-25 | 1984-12-11 | Cann Gordon L | Magnetoplasmadynamic apparatus for the separation and deposition of materials |
US4471003A (en) * | 1980-11-25 | 1984-09-11 | Cann Gordon L | Magnetoplasmadynamic apparatus and process for the separation and deposition of materials |
US4853076A (en) * | 1983-12-29 | 1989-08-01 | Massachusetts Institute Of Technology | Semiconductor thin films |
US4737233A (en) * | 1984-10-22 | 1988-04-12 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method for making semiconductor crystal films |
JPH02222134A (ja) * | 1989-02-23 | 1990-09-04 | Nobuo Mikoshiba | 薄膜形成装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2880117A (en) * | 1956-01-20 | 1959-03-31 | Electronique & Automatisme Sa | Method of manufacturing semiconducting materials |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE509317A (US20080293856A1-20081127-C00150.png) * | 1951-03-07 | 1900-01-01 | ||
NL111118C (US20080293856A1-20081127-C00150.png) * | 1954-04-01 | |||
US2902350A (en) * | 1954-12-21 | 1959-09-01 | Rca Corp | Method for single crystal growth |
DE1155759B (de) * | 1959-06-11 | 1963-10-17 | Siemens Ag | Vorrichtung zur Gewinnung reinsten kristallinen Halbleitermaterials fuer elektrotechnische Zwecke |
NL252533A (US20080293856A1-20081127-C00150.png) * | 1959-06-30 | 1900-01-01 |
-
0
- NL NL270518D patent/NL270518A/xx unknown
-
1960
- 1960-11-30 DE DES71475A patent/DE1179184B/de active Pending
-
1961
- 1961-10-02 CH CH1139761A patent/CH412821A/de unknown
- 1961-11-28 GB GB42489/61A patent/GB940236A/en not_active Expired
- 1961-11-29 US US155649A patent/US3160522A/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2880117A (en) * | 1956-01-20 | 1959-03-31 | Electronique & Automatisme Sa | Method of manufacturing semiconducting materials |
Also Published As
Publication number | Publication date |
---|---|
GB940236A (en) | 1963-10-30 |
NL270518A (US20080293856A1-20081127-C00150.png) | |
CH412821A (de) | 1966-05-15 |
US3160522A (en) | 1964-12-08 |
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