DE1160543B - Verfahren zum Behandeln von Transistoren, um die Lebensdauer bzw. die Speicherzeit der Ladungstraeger, insbesondere in der Kollektorzone, durch Rekombination zu verringern - Google Patents
Verfahren zum Behandeln von Transistoren, um die Lebensdauer bzw. die Speicherzeit der Ladungstraeger, insbesondere in der Kollektorzone, durch Rekombination zu verringernInfo
- Publication number
- DE1160543B DE1160543B DEF31524A DEF0031524A DE1160543B DE 1160543 B DE1160543 B DE 1160543B DE F31524 A DEF31524 A DE F31524A DE F0031524 A DEF0031524 A DE F0031524A DE 1160543 B DE1160543 B DE 1160543B
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- recombination
- diffused
- impurities
- service life
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 35
- 230000006798 recombination Effects 0.000 title claims description 23
- 238000005215 recombination Methods 0.000 title claims description 23
- 238000003860 storage Methods 0.000 title claims description 11
- 239000002800 charge carrier Substances 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 43
- 239000012535 impurity Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 238000009792 diffusion process Methods 0.000 claims description 26
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 20
- 229910052737 gold Inorganic materials 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 14
- 230000008901 benefit Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 241000947853 Vibrionales Species 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003339 best practice Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/062—Gold diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/904—Charge carrier lifetime control
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US82383959A | 1959-06-30 | 1959-06-30 | |
| US211132A US3184347A (en) | 1959-06-30 | 1962-07-19 | Selective control of electron and hole lifetimes in transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1160543B true DE1160543B (de) | 1964-01-02 |
Family
ID=26905864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEF31524A Pending DE1160543B (de) | 1959-06-30 | 1960-06-27 | Verfahren zum Behandeln von Transistoren, um die Lebensdauer bzw. die Speicherzeit der Ladungstraeger, insbesondere in der Kollektorzone, durch Rekombination zu verringern |
Country Status (5)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1279202B (de) * | 1965-03-30 | 1968-10-03 | Siemens Ag | Thyristor und Verfahren zu seiner Herstellung |
| DE1489087B1 (de) * | 1964-10-24 | 1970-09-03 | Licentia Gmbh | Halbleiterbauelement mit verbessertem Frequenzverhalten und Verfahren zum Herstellen |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3307984A (en) * | 1962-12-07 | 1967-03-07 | Trw Semiconductors Inc | Method of forming diode with high resistance substrate |
| NL301451A (US20080293856A1-20081127-C00150.png) * | 1962-12-17 | |||
| US3390020A (en) * | 1964-03-17 | 1968-06-25 | Mandelkorn Joseph | Semiconductor material and method of making same |
| US3423647A (en) * | 1964-07-30 | 1969-01-21 | Nippon Electric Co | Semiconductor device having regions with preselected different minority carrier lifetimes |
| US3518508A (en) * | 1965-12-10 | 1970-06-30 | Matsushita Electric Ind Co Ltd | Transducer |
| US3445736A (en) * | 1966-10-24 | 1969-05-20 | Transitron Electronic Corp | Semiconductor device doped with gold just to the point of no excess and method of making |
| US3464868A (en) * | 1967-01-13 | 1969-09-02 | Bell Telephone Labor Inc | Method of enhancing transistor switching characteristics |
| US3905836A (en) * | 1968-04-03 | 1975-09-16 | Telefunken Patent | Photoelectric semiconductor devices |
| US3886379A (en) * | 1972-12-13 | 1975-05-27 | Motorola Inc | Radiation triggered disconnect means |
| DE2341311C3 (de) * | 1973-08-16 | 1981-07-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Einstellen der Lebensdauer von Ladungsträgern in Halbleiterkörpern |
| US4177477A (en) * | 1974-03-11 | 1979-12-04 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor switching device |
| JPS5370679A (en) * | 1976-12-06 | 1978-06-23 | Nippon Gakki Seizo Kk | Transistor |
| US4140560A (en) * | 1977-06-20 | 1979-02-20 | International Rectifier Corporation | Process for manufacture of fast recovery diodes |
| KR930003555B1 (ko) * | 1988-12-16 | 1993-05-06 | 산켄 덴끼 가부시끼가이샤 | 반도체 장치의 제조방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB799670A (en) * | 1954-02-04 | 1958-08-13 | Gen Electric | Improvements in electric current control devices utilising the semi-conductor germanium |
| DE1051983B (de) * | 1955-11-01 | 1959-03-05 | Philips Nv | Halbleiteranordnung mit verminderter Temperaturabhaengigkeit, z. B. Kristalldiode oder Transistor, und Verfahren zur Herstellung einer solchen Anordnung |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3010857A (en) * | 1954-03-01 | 1961-11-28 | Rca Corp | Semi-conductor devices and methods of making same |
| US2829993A (en) * | 1955-06-24 | 1958-04-08 | Hughes Aircraft Co | Process for making fused junction semiconductor devices with alkali metalgallium alloy |
| US2962394A (en) * | 1957-06-20 | 1960-11-29 | Motorola Inc | Process for plating a silicon base semiconductive unit with nickel |
| NL240883A (US20080293856A1-20081127-C00150.png) * | 1958-07-17 | |||
| NL241982A (US20080293856A1-20081127-C00150.png) * | 1958-08-13 | 1900-01-01 | ||
| US2965519A (en) * | 1958-11-06 | 1960-12-20 | Bell Telephone Labor Inc | Method of making improved contacts to semiconductors |
| US3063879A (en) * | 1959-02-26 | 1962-11-13 | Westinghouse Electric Corp | Configuration for semiconductor devices |
| US3013955A (en) * | 1959-04-29 | 1961-12-19 | Fairchild Camera Instr Co | Method of transistor manufacture |
| US3041214A (en) * | 1959-09-25 | 1962-06-26 | Clevite Corp | Method of forming junction semiconductive devices having thin layers |
-
0
- NL NL252132D patent/NL252132A/xx unknown
- NL NL122120D patent/NL122120C/xx active
-
1960
- 1960-05-04 GB GB15712/60A patent/GB954854A/en not_active Expired
- 1960-06-07 CH CH645360A patent/CH395342A/de unknown
- 1960-06-27 DE DEF31524A patent/DE1160543B/de active Pending
-
1962
- 1962-07-19 US US211132A patent/US3184347A/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB799670A (en) * | 1954-02-04 | 1958-08-13 | Gen Electric | Improvements in electric current control devices utilising the semi-conductor germanium |
| DE1051983B (de) * | 1955-11-01 | 1959-03-05 | Philips Nv | Halbleiteranordnung mit verminderter Temperaturabhaengigkeit, z. B. Kristalldiode oder Transistor, und Verfahren zur Herstellung einer solchen Anordnung |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1489087B1 (de) * | 1964-10-24 | 1970-09-03 | Licentia Gmbh | Halbleiterbauelement mit verbessertem Frequenzverhalten und Verfahren zum Herstellen |
| DE1279202B (de) * | 1965-03-30 | 1968-10-03 | Siemens Ag | Thyristor und Verfahren zu seiner Herstellung |
Also Published As
| Publication number | Publication date |
|---|---|
| GB954854A (en) | 1964-04-08 |
| CH395342A (de) | 1965-07-15 |
| NL252132A (US20080293856A1-20081127-C00150.png) | |
| NL122120C (US20080293856A1-20081127-C00150.png) | |
| US3184347A (en) | 1965-05-18 |
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