DE1126998B - Verfahren zur Herstellung einer Tunneldiode - Google Patents
Verfahren zur Herstellung einer TunneldiodeInfo
- Publication number
- DE1126998B DE1126998B DEST16520A DEST016520A DE1126998B DE 1126998 B DE1126998 B DE 1126998B DE ST16520 A DEST16520 A DE ST16520A DE ST016520 A DEST016520 A DE ST016520A DE 1126998 B DE1126998 B DE 1126998B
- Authority
- DE
- Germany
- Prior art keywords
- highly doped
- alloyed
- layer
- pill
- redoping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000006187 pill Substances 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- YOHSSIYDFWBWEQ-UHFFFAOYSA-N lambda2-arsanylidenetin Chemical compound [As].[Sn] YOHSSIYDFWBWEQ-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/70—Tunnel-effect diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL265169D NL265169A (enrdf_load_stackoverflow) | 1960-05-25 | ||
| DEST16520A DE1126998B (de) | 1960-05-25 | 1960-05-25 | Verfahren zur Herstellung einer Tunneldiode |
| GB18464/61A GB972839A (en) | 1960-05-25 | 1961-05-19 | Tunnel diode for very high frequencies |
| FR862830A FR1289987A (fr) | 1960-05-25 | 1961-05-25 | Perfectionnements aux diodes tunnel et à leur fabrication |
| BE609329A BE609329A (fr) | 1960-05-25 | 1961-10-19 | Perfectionnements aux diodes tunnel et à leur fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEST16520A DE1126998B (de) | 1960-05-25 | 1960-05-25 | Verfahren zur Herstellung einer Tunneldiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1126998B true DE1126998B (de) | 1962-04-05 |
Family
ID=7457109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEST16520A Pending DE1126998B (de) | 1960-05-25 | 1960-05-25 | Verfahren zur Herstellung einer Tunneldiode |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1126998B (enrdf_load_stackoverflow) |
| GB (1) | GB972839A (enrdf_load_stackoverflow) |
| NL (1) | NL265169A (enrdf_load_stackoverflow) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT193944B (de) * | 1955-06-20 | 1957-12-10 | Western Electric Co | Verfahren zur Herstellung einer Halbleitereinrichtung |
| US2821493A (en) * | 1954-03-18 | 1958-01-28 | Hughes Aircraft Co | Fused junction transistors with regrown base regions |
-
0
- NL NL265169D patent/NL265169A/xx unknown
-
1960
- 1960-05-25 DE DEST16520A patent/DE1126998B/de active Pending
-
1961
- 1961-05-19 GB GB18464/61A patent/GB972839A/en not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2821493A (en) * | 1954-03-18 | 1958-01-28 | Hughes Aircraft Co | Fused junction transistors with regrown base regions |
| AT193944B (de) * | 1955-06-20 | 1957-12-10 | Western Electric Co | Verfahren zur Herstellung einer Halbleitereinrichtung |
Also Published As
| Publication number | Publication date |
|---|---|
| GB972839A (en) | 1964-10-21 |
| NL265169A (enrdf_load_stackoverflow) |
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