DE112023002435T5 - Siliziumkarbid-Halbleitervorrichtung - Google Patents

Siliziumkarbid-Halbleitervorrichtung Download PDF

Info

Publication number
DE112023002435T5
DE112023002435T5 DE112023002435.9T DE112023002435T DE112023002435T5 DE 112023002435 T5 DE112023002435 T5 DE 112023002435T5 DE 112023002435 T DE112023002435 T DE 112023002435T DE 112023002435 T5 DE112023002435 T5 DE 112023002435T5
Authority
DE
Germany
Prior art keywords
region
silicon carbide
main surface
electric field
maximum value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112023002435.9T
Other languages
German (de)
English (en)
Inventor
Kosuke Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsumi Electric Co Ltd Tama-Shi Jp
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE112023002435T5 publication Critical patent/DE112023002435T5/de
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/158—Dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Electrodes Of Semiconductors (AREA)
DE112023002435.9T 2022-05-25 2023-01-25 Siliziumkarbid-Halbleitervorrichtung Pending DE112023002435T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-085313 2022-05-25
JP2022085313 2022-05-25
PCT/JP2023/002283 WO2023228473A1 (ja) 2022-05-25 2023-01-25 炭化珪素半導体装置

Publications (1)

Publication Number Publication Date
DE112023002435T5 true DE112023002435T5 (de) 2025-03-20

Family

ID=88918893

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112023002435.9T Pending DE112023002435T5 (de) 2022-05-25 2023-01-25 Siliziumkarbid-Halbleitervorrichtung

Country Status (4)

Country Link
JP (1) JPWO2023228473A1 (https=)
CN (1) CN118974943A (https=)
DE (1) DE112023002435T5 (https=)
WO (1) WO2023228473A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014115253A1 (ja) 2013-01-23 2014-07-31 株式会社日立製作所 炭化珪素半導体装置及びその製造方法
JP2017050516A (ja) 2015-09-04 2017-03-09 株式会社豊田中央研究所 炭化珪素半導体装置
JP2022085313A (ja) 2020-11-27 2022-06-08 Ｎｅｃプラットフォームズ株式会社 情報処理装置、無線通信システム、算出方法及びプログラム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111670502A (zh) * 2018-02-06 2020-09-15 住友电气工业株式会社 碳化硅半导体器件
WO2020031446A1 (ja) * 2018-08-09 2020-02-13 住友電気工業株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP7279394B2 (ja) * 2019-02-15 2023-05-23 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7319617B2 (ja) * 2020-05-21 2023-08-02 株式会社東芝 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014115253A1 (ja) 2013-01-23 2014-07-31 株式会社日立製作所 炭化珪素半導体装置及びその製造方法
JP2017050516A (ja) 2015-09-04 2017-03-09 株式会社豊田中央研究所 炭化珪素半導体装置
JP2022085313A (ja) 2020-11-27 2022-06-08 Ｎｅｃプラットフォームズ株式会社 情報処理装置、無線通信システム、算出方法及びプログラム

Also Published As

Publication number Publication date
CN118974943A (zh) 2024-11-15
JPWO2023228473A1 (https=) 2023-11-30
WO2023228473A1 (ja) 2023-11-30

Similar Documents

Publication Publication Date Title
DE102017108738B4 (de) SiC-HALBLEITERVORRICHTUNG MIT EINEM VERSATZ IN EINEM GRABENBODEN UND HERSTELLUNGSVERFAHREN HIERFÜR
DE102013022598B3 (de) Halbleiterbauelement und Verfahren zu seiner Herstellung
DE102017209017B4 (de) Siliciumcarbid-Halbleitervorrichtung und Verfahren zum Herstellen einer Siliciumcarbid-Halbleitervorrichtung
DE102018124740B4 (de) Verfahren zur herstellung eines halbleiterbauelements
DE112018000517B4 (de) Halbleitervorrichtung
DE102019108062B4 (de) Siliziumcarbid-vorrichtung mit graben-gatestruktur und herstellungsverfahren
DE112014001221T5 (de) Siliziumkarbid-Halbleitervorrichtung
DE112017003660B4 (de) Siliciumcarbid-halbleitereinheit und verfahren zur herstellung einer siliciumcarbid-halbleitereinheit
DE112014001539B4 (de) Siliziumkarbid-Halbleitervorrichtung und Verfahren zu deren Herstellung
DE112018007026T5 (de) Siliziumkarbid-Halbleitervorrichtung
DE102017120943B4 (de) Verfahren zur Herstellung eines MOSFETs
DE112020006240T5 (de) Siliziumkarbid-Halbleitervorrichtung
DE112015002342B4 (de) Verfahren zur Herstellung einer Siliziumkarbid-Halbleitervorrichtung
DE102019109368B4 (de) Halbleitervorrichtung mit siliziumcarbidkörper und herstellungsverfahren
DE102021122629A1 (de) Leistungshalbleitervorrichtung und verfahren zur herstellung davon
DE112016005558T5 (de) Siliciumcarbid-Halbleitereinheit
DE102018130737B4 (de) Grabenstrukturen enthaltende halbleitervorrichtung und herstellungsverfahren
DE102018106992B3 (de) Siliziumcarbid halbleiterbauelement
DE112021006225T5 (de) Siliziumkarbid-Halbleitervorrichtung
DE102019106087B3 (de) Halbleitervorrichtung mit einem halbleiterkörper aus siliziumcarbid und verfahren
DE102018103836A1 (de) Siliziumcarbid-Halbleiterbauelement und Verfahren zur Herstellung eines Siliziumcarbid-Halbleiterbauelements
DE112023002435T5 (de) Siliziumkarbid-Halbleitervorrichtung
DE112018006921T5 (de) Siliziumkarbid-Halbleiterbauelement
DE102018123164B3 (de) Halbleitervorrichtung, die eine graben-gatestruktur enthält, und herstellungsverfahren
DE112023000230T5 (de) Halbleitervorrichtung

Legal Events

Date Code Title Description
R081 Change of applicant/patentee

Owner name: MITSUMI ELECTRIC CO., LTD., TAMA-SHI, JP

Free format text: FORMER OWNER: SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP